Fairchild H11AA1M, H11AA2M, H11AA3M, H11AA4M service manual

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

September 2009

H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers

Features

■

Bi-polar emitter input Built-in reverse polarity input protection

■

Underwriters Laboratory (UL) recognized File #E90700, Volume 2

■

VDE approved File #102497 (ordering option ‘V’)

Description

The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

Applications

■

AC line monitor Unknown polarity DC sensor

■

Telephone line interface

Schematic Package Outlines

1

2

6

BASE

5 COLL

3

4 EMITTER

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Absolute Maximum Ratings

(T

=25°C Unless otherwise speciﬁed)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

(pk) Forward Current – Peak (1µs pulse, 300 pps) All ±1.0 A

I

F

P

D

DETECTOR

I

C

P

D

Storage Temperature All -40 to +150 °C

Operating Temperature All -40 to +100 °C

Lead Solder Temperature All 260 for 10 sec °C

Total Device Power Dissipation

Derate Linearly From 25°C

All 250 mW

2.94 mW/°C

Continuous Forward Current All 60 mA

LED Power Dissipation

Derate Linearly From 25°C

All 120 mW

1.41 mW/°C

Continuous Collector Current All 50 mA

Detector Power Dissipation

Derate linearity from 25°C

All 150 mW

1.76 mW/°C

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C Unless otherwise speciﬁed.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

C

DETECTOR

BV

I

CEO

C

*Typical values at T

Input Forward Voltage I

F

Capacitance V

J

Breakdown Voltage

CEO

Collector to Emitter

Collector to Base I

CBO

Emitter to Base I

EBO

Emitter to Collector I

ECO

Leakage Current Collector to Emitter

Capacitance Collector

CE

to Emitter

Collector to Base V

CB

Emitter to Base V

EB

= 25°C

A

= ±10mA All 1.17 1.5 V

F

= 0 V, f = 1.0MHz All 80 pF

F

I

= 1.0mA, I

C

= 100µA, I

C

= 100µA, I

E

= 100µA, I

E

V

= 10 V, I

CE

= 0 All 30 100 V

F

= 0 All 70 120 V

F

= 0 All 5 10 V

F

= 0 All 7 10 V

F

= 0 H11AA1M

F

150nA H11AA3M H11AA4M

H11AA2M 1 200

V

= 0, f = 1MHz All 10 pF

CE

= 0, f = 1MHz All 80 pF

CB

= 0, f = 1MHz All 15 pF

EB

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

CTR

V

CE(SAT)

Current Transfer Ratio,

CE

Collector to Emitter

Current Transfer Ratio, Symmetry

Saturation Voltage, Collector to Emitter

I

= ±10mA, V

F

= ±10mA, V

I

F

(Figure 11)

I

= ±10mA, I

F

= 10V H11AA4M 100 %

CE

H11AA3M 50

H11AA1M 20

H11AA2M 10

= 10V

CE

= 0.5mA All .40 V

CE

All .33 3.0

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ.* Max. Units

C

I-O

V

ISO

R

ISO

*Typical values at T

Package Capacitance

V

= 0, f = 1MHz 0.7 pF

I-O

Input/Output

Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk)

Isolation Resistance V

= 25°C

A

= 500 VDC 10

I-O

11

Ω

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b, V

x 1.875 = V

IORM

, 100% Production Test

PR

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC Input to Output Test Voltage, Method a,

V

IORM

x 1.5 = V

, Type and Sample Test

PR

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

IORM

IOTM

Max. Working Insulation Voltage 850 V Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

Typical Performance Characteristics

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

100

TA = 25°C

80

60

40

20

0

-20

– INPUT CURRENT (mA)

-40

F

I

-60

-80

-100

-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0

VF – IN PUT VOLTAGE (V)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

V

= 5V

CE

Fig. 1 Input Voltage vs. Input Current

Normalized to I

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

-60 -4 0 -20 0 20 40 60 80 100

= 10mA, TA = 25°C

F

IF = 10mA

I

= 5mA

F

= 20mA

I

F

TA – AMBIENT TEMPERATURE (°C)

Fig. 2 Normalized CTR vs. Forward Current

1.4

TA = 25°C V

= 5V

CE

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

051015 20

Normalized to I

IF – FORWARD CURRENT (mA)

Fig. 4 CTR vs. RBE (Unsaturated)

1.0

)

/ CTR

NORMALIZED CTR ( CTR

V

= 5V

CE

0.9

= 25°C

T

A

0.8

RBE(OPEN)

0.7

I

= 20mA

F

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0 10 100 1000

I

F

= 5mA

= 10mA

I

F

RBE – BASE RESISTANCE (kΩ)

= 10mA

F

Fig. 5 CTR vs. RBE (Saturated)

1.0

)

/ CTR

NORMALIZED CTR ( CTR

VCE = 0.3V

0.9

= 25°C

T

A

0.8

RBE(OPEN)

0.7 I

= 20mA

F

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

10 100 1000

I

= 5mA

F

= 10mA

I

F

RBE- BASE RESISTANCE (k Ω)

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

100

TA = 25°C

10

1

= 2.5mA

I

F

0.1

0.01

– COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.001

0.01 0.1 1 10

CE (SAT)

V

IC - COLLECTOR CURRENT (mA)

= 10mA

I

F

I

= 5mA

F

I

= 20mA

F

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Typical Performance Characteristics

Fig. 7 Switching Speed vs. Load Resistor

1000

IF = 10mA

= 10V

V

CC

T

= 25°C

A

100

10

SWITCHING SPEED (µs)

1

0.1

0.1 1 10 100

R – LOAD RESISTOR (kΩ)

3.0

Fig. 9 Normalized t

VCC = 10V I

2.5

2.0

1.5

= 2mA

C

= 100Ω

R

L

T

= 25°C

A

)

off(open)

/ t

)

BE

off(R

– (t

off

1.0

off

T

off

T

on

T

r

vs. R

f

BE

(Continued)

TER DARK CURRENT (nA)

Fig. 8 Normalized ton vs. R

7

VCC = 10V I

)

on(open)

/ t

)

on(R

– (t

on

NORMALIZED t

= 2mA

C

6

= 100Ω

R

L

T

= 25°C

A

5

BE

4

3

2

1

0

10 100 1000 10000 100000

BE

RBE- BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

10000

1000

100

= 30V

V

10

CE

VCE = 10V

NORMALIZED t

0.5

0.0 10 100 1000 10000 100000

R

– BASE RESISTANCE (kΩ)

BE

Fig. 11 Output Symmetry Characteristics

10

5

1

.5

.1

D OUTPUT CURRENT

.05

.01

NORMALIZE

.005

.01 .05 .1 .5 5110

V

1

– COLLECTOR -EMIT

CEO

I

0.1 020406080100

IF =

- 10mA

I

IF = I 10mA

NORMALIZED TO:

= 10 V

V

CE

= 10 mA

I

F

THE MAXIMUM PEAK OUTPUT CURRENT WILL BE NO MORE THAN THREE TIMES THE MINIMUM PEAK OUTPUT CURRENT AT

= ±10 mA

I

F

– COLLECTOR TO EMITTER VOLTAGE (V)

CE

TA – AMBIENT TEMPERATURE

I

(°C)

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

Surface Mount

7.62 (Typ.)

15° (Typ.)

8.13–8.89

64

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Option

No option H11AA1M Standard Through Hole Device

S H11AA1SM Surface Mount Lead Bend

SR2 H11AA1SR2M Surface Mount; Tape and Reel

T H11AA1TM 0.4" Lead Spacing

V H11AA1VM VDE 0884

TV H11AA1TVM VDE 0884, 0.4" Lead Spacing

SV H11AA1SVM VDE 0884, Surface Mount

SR2V H11AA1SR2VM VDE 0884, Surface Mount, Tape and Reel

Marking Information

Order Entry Identiﬁer

(Example) Description

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

1

H11AA1

V X YY Q

43

5

2

6

Deﬁnitions

1Fairchild logo

2Device number

3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table)

4 One digit year code, e.g., ‘3’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

*Note – Parts that do not have the ‘V’ option (see deﬁnition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.

Carrier Tape Specification

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

1.75 ± 0.10

24.0 ± 0.3

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Reflow Profile

°C

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

0 60 180120 270

1.822°C/Sec Ramp up rate

33 Sec

260°C

Time above

183°C = 90 Sec

Time (s)

>245°C = 42 Sec

360

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™

CROSSVOLT™

CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™*

®

™*

®

Fairchild Fairchild Semiconductor FACT Quiet Series™

®

FACT

®

FAST

®

F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

FastvCore™ FETBench™ FlashWriter FPS™

®

*

PDP SPM™ Power-SPM™

PowerTrench

SM

PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

®

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®

ThePower Franchise

TinyBoost™ TinyBuck™

®

TinyLogic

®

TINYOPTO™

™

TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™

®

TRUECURRENT™* µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OFTHE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

Fairchild H11AA1M, H11AA2M, H11AA3M, H11AA4M service manual

Specifications and Main Features

Frequently Asked Questions

User Manual