Fairchild FZT3019 service manual
tm
FZT3019
NPN General Purpose Amplifier
FZT3019 NPN General Purpose Amplifier
April 2006
Features
4
• This device is designed for general purpose medium power amplifiers and
switches requiring collector currents to 500 mA and collector voltages up to 80 V.
• Sourced from process 12.
1
SOT-223
2
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
On Characteristics
h
FE
V
CE(sat)
V
BE(sat)
Small Signal Characteristics
f
T
C
cob
C
ibo
h
fe
rb’Cc Collector Base Time Constant IC = 10 mA, VCB = 10 V, f = 4.0 MHz 400 pS
NF Noise Figure IC = 100 mA, VCE = 10 V,
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Voltage 80 V
Collector-Base Voltage 140 V
Emitter-Base Voltage 7.0 V
Collector current - Continuous 1.0 A
Junction and Storage Temperature -55 ~ +150 °C
=25°C unless otherwise noted
a
Collector-Emitter Sustaining Voltage * IC = 30 mA, IB = 0 80 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 140 V
Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 7.0 Vn
Collector Cutoff Current VCB = 90 V, IE = 0
Emitter-Cutoff Current VEB = 5 V, 10 nA
DC Current Gain IC = 0.1 mA, VCE = 10 V
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
Base-Emitter Saturatio n Voltage IC = 150 mA, IB = 15 mA 1.1 V
Current Gain - Bandwidth Product IC = 50 mA, VCE = 10 V, f = 20 MHz 100 MHz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 12 pF
Input Capacitance VBE = 0.5 V, IE = 0, f = 1.0 MHz 60 pF
Small Signal current Gain IC = 50 mA, VCE = 10 V,
VCB = 90 V, IE = 0, Ta = 150°C
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
IC = 500 mA, IB = 50 mA
f = 20 MHz
RS = 1.0kΩ, f = 1.0KHz
50
90
100
50
15
80 400
10
10
300
0.2
0.5
4.0 dB
3
nA
µA
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FZT3019 Rev. B
FZT3019 NPN General Purpose Amplifier
Thermal Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
* Thermal Resistance, Junction to Ambient 125 °C/W
θJA
NOTES :
* Device mounted on FR-4 PCB 36mm × 18mm ×1.5mm, Mounting Pad for the collector lead is 600mm
Total Device Dissipation
Derate above 25°C
1.0
8.0
2
W
mW/°C
FZT3019 Rev. B
2 www.fairchildsemi.com
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