Fairchild FYPF2010DN service manual

FYPF2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
FYPF2010DN
Applications
• Switched mode power supply
• Freewheeling diodes
• Polarity protection
1 2 3
TO-220F
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) T
Symbol Parameter Value Units
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 100 V Maximum DC Reverse Voltage 100 V Maximum Average Rectified Current @ TC = 105°C20 A Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
Symbol Parameter Value Units
R
θJC
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Thermal Resistance, Junction to Case (per diode) 2.8 °C/W
(per diode) TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage I I I I
Maximum Instantaneous Reverse Current (per diode) @ rated V
= 10A
F
= 10A
F
= 20A
F
= 20A
F
TC = 25 °C
R
=25°°°°C unless otherwise noted
C
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
C
-
-
-
-
-
-
150 A
-
0.77
-
0.65
-
-
-
-
-
0.75
0.1 20
V
mA
©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
Typical Characteristics
FYPF2010DN
TJ=125 oC
TJ=75 oC
TJ=25 oC
[V]
F
100
10
[A]
F
1
0.1
Forward Current, I
0.01
0.0 0.5 1.0 1.5
Forward Voltage Drop, V
Figure 1. Typical Forward Volta ge C haracteristics
(per diode)
1000
900 800
[pF]
700
J
600 500
400 300
200
TJ=25 oC
10
1
[mA]
R
0.1
0.01
Reverse Current, I
1E-3
20 40 60 80 100
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (p er diode)
10
C/W]
o
1
Juntion Capacitance, C
100
90 80
0 20406080100
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
25
[A]
20
F(AV)
15
10
5
Average Forward Current, I
0
0 20 40 60 80 100 120 140 160
Case Temperature, TC[oC]
DC
Figure 5. Forward Current Derating Curve
0.1
Transient Thermal Impedance [
100µ 1m 10m 100m 1 10 100
Pulse Duration [s]
Figure 4. Thermal Impedance Characte rist ics
(per diode)
250
[A]
200
FSM
150
100
50
Max. Forward Surge Current, I
0
1 10 100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
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