FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
1.Anode
3.Anode
2. Cathode
FYP2010DN — Schottky Barrier Rectifier
August 2009
1 2 3
Absolute Maximum Ratings T
TO-220
=25°C unless otherwise noted
A
Symbol Parameter Value Units
V
RRM
V
I
F(AV)
I
FSM
T
J, TSTG
R
Maximum Repetitive Reverse Voltage 100 V
Maximum DC Reverse Voltage 100 V
Average Rectified Forward Current @ TC = 120°C20 A
Non-repetitive Peak Surge Current (per diode)
150 A
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.7 °C/W
Electrical Characteristics (per diode)
Symbol Parameter Value Units
V
FM *
I
RM *
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
= 10A
F
= 10A
I
F
IF = 20A
IF = 20A
Maximum Instantaneous Reverse Current
@ rated V
R
T
= 25 °C
C
= 125 °C
T
C
TC = 25 °C
TC = 125 °C
T
= 25 °C
C
= 125 °C
T
C
0.77
0.65
-
0.75
0.1
20
V
mA
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FYP2010DN Rev. B1 1
Typical Performance Characteristics
FYP2010DN — Schottky Barrier Rectifier
100
10
[A]
F
1
TJ=125 oC
0.1
Forward Current, I
0.01
0.0 0.5 1.0 1.5
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, V
[V]
F
Figure 1. Typical Forward Volta ge Characteristics
(per diode)
1000
900
800
[pF]
700
J
600
500
400
300
200
Juntion Capacitance, C
100
90
80
0 20406080100
Reverse Voltage, VR[V]
TJ=25 oC
10
1
[mA]
R
0.1
0.01
Reverse Current, I
1E-3
20 40 60 80 100
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (p er d io de)
10
C/W]
o
1
Transient Thermal Impedance [
100µ 1m 10m 100m 1 10
Pulse Duration [s]
Figure 3. Typical Junction Capacitance
(per diode)
25
[A]
20
F(AV)
15
10
5
Average Forward Current, I
0
0 20 40 60 80 100 120 140 160
DC
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
Figure 4. Thermal Impedance Characte ristics
(per diode)
250
[A]
200
FSM
150
100
50
Max. Forward Surge Current, I
0
1 10 100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FYP2010DN Rev. B1 2
Physical Dimensions
FYP2010DN — Schottky Barrier Rectifier
TO-220
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FYP2010DN Rev. B1 3
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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