Fairchild FSQ0265RN service manual

FSQ0365, FSQ0265, FSQ0165, FSQ321
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
August 2011
Green Mode Fairchild Power Switch (FPS™)
for Valley Switching Converter – Low EMI and High Efficiency
Optimized for Valley Switching Converter (VSC)
Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
High Efficiency through Minimum Voltage Switching
Narrow Frequency Variation Range Over Wide Load
and Input Voltage Variation
Advanced Burst-Mode Operation for Low Standby
Power Consumption
Pulse-by-Pulse Current Limit
Protection Functions: Overload Protection (OLP),
Over-Voltage Protection (OVP), Abnormal Over­Current Protection (AOCP), Internal Thermal Shutdown (TSD)
Under-Voltage Lockout (UVLO) with Hysteresis
Internal Startup Circuit
Internal High-Voltage SenseFET: 650V
Built-in Soft-Start: 15ms
Applications
Description
A Valley Switching Converter generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ-series is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for valley switching operation with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, under-voltage lockout, Leading-Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller solutions, the FSQ-series reduces total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform for cost-effective designs of valley switching fly-back converters.
Related Application Notes
AN-4137 - Design Guidelines for Offline Flyback
Converters Using Fairchild Power Switch (FPS™)
AN-4141 - Troubleshooting and Design Tips for
Fairchild Power Switch (FPS™) Flyback Applications
Power Supplies for DVP Player, DVD Recorder,
Set-Top Box
Adapter
Auxiliary Power Supply for PC, LCD TV, and PDP TV
AN-4147 - Design Guidelines for RCD Snubber of
Flyback Converters
AN-4150 - Design Guidelines for Flyback
Converters Using FSQ-series Fairchild Power Switch (FPS™)
AN-4134 - Design Guidelines for Off-line Forward
Converters Using Fairchild Power Switch (FPS™)
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6
Ordering Information
(3)
(1)
Open
Frame
(4)
FSDM0265RN
FSDM0265RNB
FSDM0365RN
FSDM0365RNB
Maximum Output Table
Part Number Package
Operating
Temperature
Current
Limit
R
DS(ON)
(Max.)
230VAC ±15%
Adapter
(3)
(2)
85-265VAC
Open
Frame
(4)
Adapter
FSQ321 8-DIP
FSQ321L 8-LSOP
-40 to +85°C 0.6A 19 8W 12W 7W 10W
FSQ321LX
8-LSOP (Tape &
Reel)
FSQ0165RN 8-DIP
FSQ0165RL 8-LSOP
-40 to +85°C 0.9A 10 10W 15W 9W 13W FSDL0165RN
FSQ0165RLX
8-LSOP (Tape &
Reel)
FSQ0265RN 8-DIP
FSQ0265RL 8-LSOP
FSQ0365RN 8-DIP
FSQ0365RL 8-LSOP
-40 to +85°C 1.2A 6 14W 20W 11W 16W
-40 to +85°C 1.5A 4.5 17.5W 25W 13W 19W
Notes:
1. The junction temperature can limit the maximum output power.
2. 230V
or 100/115VAC with voltage doubler. The maximum power with CCM operation
AC
3. Typical continuous power in a non-ventilated, enclosed adapter measured at 50C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50C ambient temperature.
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Replaces
Devices
FSDL321
FSDM311
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 2
Application Circuit
AC
IN
Sync
V
PWM
fb
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Vo
V
str
V
cc
Drain
GND
Internal Block Diagram
0.35/0.55 V
Burst
V
V
ref
CC
I
I
FB
V
SD
Sync
V
ovp
delay
3R
6V
6V
Vfb
3
Figure 1. Typical Flyback Application
Sync
4
+
-
R
0.7V/0.2V
Soft­Start
2.5 s Time Delay
+
-
PWM
TSD
VCCGood
OSC
LEB
200ns
SQQ
R
SQQ
R
Vstr
5
V
ref
VCCGood
AOCP
Gate
Driver
Vcc
2 8
+
-
8V/12V
V
OCP
(1.1V)
Drain
76
1
GND
FSQ0365RN Rev.00
Figure 2. Internal Block Diagram
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 3
Pin Assignments
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin# Name Description
1 GND SenseFET source terminal on primary side and internal control ground.
Positive supply voltage input. Although connected to an auxiliary transformer winding,
2 VCC
3 Vfb
4 Sync
5 Vstr
6, 7, 8 Drain
current is supplied from pin 5 (Vstr) via an internal switch during startup (see Figure 2).
It is not until V
reaches the UVLO upper threshold (12V) that the internal startup switch
CC
opens and device power is supplied via the auxiliary transformer winding.
The feedback voltage pin is the non-inverting input to the PWM comparator. It has a
0.9mA current source connected internally while a capacitor and opto-coupler are typically connected externally. There is a time delay while charging external capacitor C to 6V using an internal 5A current source. This delay prevents false triggering under transient conditions, but still allows the protection mechanism to operate under true overload conditions.
This pin is internally connected to the sync-detect comparator for valley switching. Typically the voltage of the auxiliary winding is used as Sync input voltage and external resistors and capacitor are needed to make delay to match valley point. The threshold of the internal sync comparator is 0.7V/0.2V.
This pin is connected to the rectified AC line voltage source. At startup, the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and ground. Once the V
reaches 12V, the internal switch is opened.
CC
The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 650V. Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance.
from 3V
fb
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 4
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T
Symbol Parameter Min. Max. Unit
V
Vstr Pin Voltage 500 V
STR
V
Drain Pin Voltage 650 V
DS
V
Supply Voltage 20 V
CC
V
Feedback Voltage Range -0.3 9.0 V
FB
V
Sync Pin Voltage -0.3 9.0 V
Sync
IDM Drain Current Pulsed
EAS Single Pulsed Avalanche Energy
P
Total Power Dissipation 1.5 W
D
T
Recommended Operating Junction Temperature -40 Internally Limited
J
TA Operating Ambient Temperature -40 +85
T
Storage Temperature -55 +150
STG
ESD
Human Body Model; JESD22-A114
Machine Model; JESD22-A115
Notes:
5. Repetitive rating: Pulse width limited by maximum junction temperature.
6. L=51mH, starting T
=25°C.
J
(6)
(7)
=25°C, unless otherwise specified.
A
FSQ0365 12.0
FSQ0265 8.0
FSQ0165 4.0
FSQ321 1.5
FSQ0365 230
FSQ0265 140
FSQ0165 50
FSQ321 10
CLASS 1C
CLASS B
A
mJ
C
C
C
Thermal Impedance
Symbol Parameter Value Unit
(7)
8-DIP
Notes:
7. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
8. Free-standing with no heat-sink, under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
10. Measured on the package top surface.
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 5
θJA Junction-to-Ambient Thermal Resistance
θJC Junction-to-Case Thermal Resistance
θJT Junction-to-Top Thermal Resistance
(9)
(10)
(8)
80
20
°C/W
35
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Electrical Characteristics
T A=25C unless otherwise specified.
Symbol Parameter Condition Min. Typ. Max. Unit
SenseFET Section
BV
Drain-Source Breakdown Voltage VCC=0V, ID=100µA 650 V
DSS
I
Zero-Gate-Voltage Drain Current VDS=650V 100 µA
DSS
R
C
C
DS(ON)
C
ISS
OSS
RSS
t
d(on)
Drain-Source On­State Resistance
(11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay
tr Rise Time
t
Turn-Off Delay
d(off)
tf Fall Time
Burst-Mode Section
V
BURH
V
BURL
V
BUR(HYS)
Burst-Mode Voltage T
0.25 0.35 0.45 V
200 mV
Continued on the following page…
FSQ0365
FSQ0265 5.0 6.0
FSQ0165 8.0 10.0
TJ=25C, ID=0.5A
FSQ321
FSQ0365
FSQ0265 550
FSQ0165 250
VGS=0V, VDS=25V, f=1MHz
FSQ321 162
FSQ0365
FSQ0265 38
FSQ0165 25
VGS=0V, VDS=25V, f=1MHz
FSQ321 18
FSQ0365
FSQ0265 17.0
FSQ0165 10.0
VGS=0V, VDS=25V, f=1MHz
FSQ321 3.8
FSQ0365
FSQ0265 20.0
FSQ0165 12.0
VDD=350V, ID=25mA
FSQ321 9.5
FSQ0365
FSQ0265 15
FSQ0165 4
VDD=350V, ID=25mA
FSQ321 19
FSQ0365
FSQ0265 55.0
FSQ0165 30.0
VDD=350V, ID=25mA
FSQ321 33.0
FSQ0365
FSQ0265 25
FSQ0165 10
VDD=350V, ID=25mA
FSQ321 42
=25°C, tPD=200ns
J
(12)
3.5 4.5

14.0 19.0
315
pF
47
pF
9.0
pF
11.2
ns
34
ns
28.2
ns
32
ns
0.45 0.55 0.65 V
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 6
Electrical Characteristics (Continued)
T A=25C unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
Control Section
t
Maximum On Time1
ON.MAX1
t
Maximum On Time2 FSQ321 TJ=25°C 6.35 7.06 7.77 µs
ON.MAX2
tB1 Blanking Time1
tB2 Blanking Time2 FSQ321 7.5 8.2 µs
tW Detection Time Window TJ=25°C, V
fS
Switching Frequency Variation
IFB Feedback Source Current VFB=0V 700 900 1100 µA
D
Minimum Duty Cycle VFB=0V 0 %
MIN
V
START
V
STOP
t
S/S1
t
S/S2
UVLO Threshold Voltage After Turn-on
7 8 9 V
Internal Soft-Start Time 1
Internal Soft-Start Time 2 FSQ321
Protection Section
I
Peak Current Limit
LIM
VSD Shutdown Feedback Voltage VCC=15V 5.5 6.0 6.5 V
I
Shutdown Delay Current VFB=5V 4.0 5.0 6.0 µA
DELAY
t
Leading-Edge Blanking Time
LEB
V
Over-Voltage Protection VCC=15V, VFB=2V 5.5 6.0 6.5 V
OVP
t
OVP
Over-Voltage Protection Blanking Time
TSD Thermal Shutdown Temperature
Sync Section
VSH
VSL 0.14 0.20 0.26 V
t
Sync
Sync Threshold Voltage
Sync Delay Time
(13,14)
Total Device Section
IOP
I
START
Operating Supply Current (Control Part Only)
Start Current
ICH Startup Charging Current VCC=0V, V
V
Minimum V
STR
Supply Voltage 26 V
STR
Notes:
11. Pulse test: Pulse-Width=300s, duty=2%.
12. Propagation delay in the control IC.
13. Though guaranteed, it is not 100% tested in production.
14. Includes gate turn-on time.
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 7
All but FSQ321
All but FSQ321
(14)
TJ=25°C 10.5 12.0 13.5 µs
13.2 15.0 16.8 µs
=0V 3.0 µs
sync
-25C < TJ < 85C
±5 ±10 %
11 12 13 V
All but FSQ321
FSQ0365 T
FSQ0265 TJ=25°C, di/dt=200mA/µs 1.06 1.20 1.34
FSQ0165 TJ=25°C, di/dt=175mA/µs 0.8 0.9 1.0
With Free-Running Frequency
With Free-Running Frequency
=25°C, di/dt=240mA/µs 1.32 1.50 1.68
J
15 ms
10 ms
A
FSQ321 TJ=25°C, di/dt=125mA/µs 0.53 0.60 0.67
(13)
200 ns
2 3 4 µs
(13)
125 140 155 °C
0.55 0.70 0.85 V
300 ns
VCC=15V 1 3 5 mA
V
CC=VSTART
(Before V
- 0.1V Reaches V
CC
=Minimum 40V 0.65 0.85 1.00 mA
STR
START
270 360 450 µA
)
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Comparison Between FSDM0x65RNB and FSQ-Series
Function FSDM0x65RNB FSQ-Series Advantages of FSQ-Series
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Operation Method
EMI Reduction
Burst-Mode
Operation
Protection AOCP
Constant
Frequency PWM
Frequency
Modulation
Fixed Burst Peak
Valley Switching
Operation
Valley Switching &
Inherent Frequency
Modulation
Advanced Burst-
Mode
Improved efficiency by valley switching Reduced EMI noise
Reduce EMI noise in two ways
Improved standby power by valley switching also in
burst-mode
Because the current peak during burst operation is
dependent on V noise
, it is easier to solve audible
FB
Improved reliability through precise abnormal over-
current protection
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 8
Typical Performance Characteristics
Characteristic graphs are normalized at T
=25°C.
A
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 4. Operating Supply Current (IOP) vs. TA Figure 5. UVLO Start Threshold Voltage (V
vs. TA
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
START
)
Figure 6. UVLO Stop Threshold Voltage (V
STOP
)
Figure 7. Startup Charging Current (ICH) vs. TA
vs. TA
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 8. Initial Switching Frequency (fS) vs. TA Figure 9. Maximum On Time (t
) vs. TA
ON.MAX
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 9
Typical Performance Characteristics (Continued)
Characteristic graphs are normalized at TA=25°C.
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 10. Blanking Time (tB) vs. TA Figure 11. Feedback Source Current (IFB) vs. TA
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 12. Shutdown Delay Current (I
DELAY
) vs. TA
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 14. Burst Mode Low Threshold Voltage (V
vs. TA
Figure 13. Burst Mode High Threshold Voltage (V
vs. TA
1.2
1.0
0.8
burl
)
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 15. Peak Cu rrent Limit (I
LIM
) vs. TA
burh
)
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 10
Typical Performance Characteristics (Continued)
Characteristic graphs are normalized at TA=25°C.
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 16. Sync High Threshold (VSH) vs. TA Figure 17. Sync Low Threshold Voltage (VSL) vs. TA
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
Normalized
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA Figure 19. Over-Voltage Protection (VOP) vs. TA
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 11
Functional Description
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the external capacitor (C illustrated in Figure 20. When V
) connected to the VCC pin, as
a
reaches 12V, the
CC
FPS™ begins switching and the internal high-voltage current source is disabled. The FPS continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless V
goes
CC
below the stop voltage of 8V.
V
DC
C
a
8V/12V
V
CC
2 5
I
CH
VCC good
V
str
V
ref
Internal
FSQ0365RN Rev.00
Bias
Figure 20. Startup Circuit
2. Feedback Control: FPS employs Current Mode
control, as shown in Figure 21. An opto-coupler (such as FOD817A) and shunt regulator (such as KA431) are
FOD817A
KA431
V
FB
C
B
V
O
FSQ0365RN Rev. 00
Figure 21. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a valley
switching technique to minimize the switching noise and loss. The basic waveforms of the valley switching converter are shown in Figure 22. To minimize the MOSFET's switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 22. The minimum drain voltage is indirectly detected by monitoring the V winding voltage, as shown in Figure 22.
V
ds
V
DC
V
V
ref
CC
I
delay
3
V
SD
I
D1 D2
V
FB
Gate
driver
SenseFET
R
sense
OSC
3R
+
*
FB
R
-
OLP
CC
V
RO
V
RO
often used to implement the feedback network. Comparing the feedback voltage with the voltage across the R
resistor makes it possible to control the
SENSE
switching duty cycle. When the reference pin voltage of
V
sync
t
F
V
(6V)
ovp
the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback voltage and reducing the duty cycle. This event typically occurs when input voltage is increased or output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because Current
MOSFET Gate
0.7V
0.2V
300ns Delay
Mode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (V
*), as shown in Figure 21. Assuming
FB
ONON
that the 0.9mA current source flows only through the internal resistor (3R + R = 2.8k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (V
) exceeds 2.5V, the maximum
FB
voltage of the cathode of D2 is clamped at this voltage, clamping V
*. Therefore, the peak value of the current
FB
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the R
sense
resistor would lead to incorrect feedback operation in the Current Mode PWM control. To counter this effect, the FPS employs a leading-edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (t
) after the SenseFET is turned on.
LEB
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 12
Figure 22. Valley Resonant Switching Waveforms
4. Protection Circuits: The FSQ-series has several
self-protective functions, such as Overload Protection (OLP), Abnormal Over-Current protection (AOCP), Over-Voltage Protection (OVP), and Thermal Shutdown (TSD). All the protections are implemented as Auto­Restart Mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes V Under-Voltage Lockout (UVLO) stop voltage of 8V, the
to fall. When VCC falls down to the
CC
protection is reset and the startup circuit charges the V
capacitor. When the VCC reaches the start voltage
CC
of 12V, the FSQ-series resumes normal operation. If the fault condition is not removed, the SenseFET remains off and V
drops to stop voltage again. In this manner,
CC
FSQ0365RN Rev.00
the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, the reliability is improved without increasing cost.
V
FB
6.0V
FSQ0365RN Rev.00
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Overload protection
Fault
V
V
12V
8V
Power
DS
on
CC
occurs
Fault
removed
t
FSQ0365RN Rev. 00
Normal
operation
Fault
situation
Normal
operation
Figure 23. Auto-Restart Protection Waveforms
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes more than this maximum power, the output voltage (V
) decreases below the set voltage. This
O
reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (V
). If VFB
FB
exceeds 2.8V, D1 is blocked and the 5µA current source starts to charge CB slowly up to V V
continues increasing until it reaches 6V, when the
FB
. In this condition,
CC
switching operation is terminated, as shown in Figure
24. The delay for shutdown is the time required to charge CB from 2.8V to 6V with 5µA. A 20 ~ 50ms delay is typical for most applications.
2.8V
t12= CFB*(6.0-2.8)/I
t
1
delay
t
t
2
Figure 24. Overload Protection
4.2 Abnormal Over-Current Protection (AOCP)
: When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high-di/dt can flow through the SenseFET during the LEB time. Even though the FSQ-series has Overload Protection (OLP), it is not enough to protect the FSQ-series in that abnormal case, since severe current stress is imposed on the SenseFET until OLP triggers. The FSQ-series has an internal Abnormal Over-Current Protection (AOCP) circuit as shown in Figure 25. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS.
3R
R
FSQ0365RN Rev.00
AOCP
PWM
OSC
LEB
200ns
SQQ
R
Gate
driver
R
+
-
sense
V
OCP
1
GND
Figure 25. Abnormal Over-Current Protection
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 13
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
4.3 Over-Voltage Protection (OVP): If the secondary-
side feedback circuit malfunctions or a solder defect causes an opening in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then V
climbs up in a similar manner to the
FB
overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection triggers. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection triggers, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an OVP circuit is employed. In general, the peak voltage of the sync signal is proportional to the output voltage and the FSQ-series uses a sync signal instead of directly monitoring the output voltage. If the sync signal exceeds 6V, an OVP is triggered, shutting down the SMPS. To avoid undesired triggering of OVP during normal operation, the peak voltage of the sync signal should be designed below 6V.
4.4 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This makes it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds ~150°C, the thermal shutdown triggers.
5. Soft-Start: An internal soft-start circuit increases
PWM comparator inverting input voltage with the SenseFET current slowly after it starts up. The typical soft-start time is 15ms. The pulsewidth to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This helps prevent transformer saturation and reduces stress on the secondary diode during startup.
6. Burst Operation: To minimize power dissipation in
Standby Mode, the FPS enters Burst-Mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 26, the device automatically enters Burst Mode when the feedback voltage drops below V
(350mV). At this point, switching stops and the
BURL
output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes V
(550mV), switching
BURH
resumes. The feedback voltage then falls and the process repeats. Burst Mode alternately enables and disables switching of the power SenseFET, reducing switching loss in Standby Mode.
V
O
set
V
O
V
FB
0.55V
0.35V
I
DS
V
DS
time
t4
FSQ0365RN Rev.00
Switching
disabled
t1
t2 t3
Switching
disabled
Figure 26. Waveforms of Burst Operation
7. Switching Frequency Limit
: To minimize switching loss and Electromagnetic Interference (EMI), the MOSFET turns on when the drain voltage reaches its minimum value in valley switching operation. However, this causes switching frequency to increases at light load conditions. As the load decreases, the peak drain current diminishes and the switching frequency increases. This results in severe switching losses at light-load condition, as well as intermittent switching and audible noise. Because of these problems, the valley switching converter topology has limitations in a wide range of applications.
To overcome this problem, FSQ-series employs a frequency-limit function, as shown in Figure 27 and Figure 28. Once the SenseFET is turned on, the next turn-on is prohibited during the blanking time (t
). After
B
the blanking time, the controller finds the valley within the detection time window (t
) and turns on the
W
MOSFET, as shown in Figure 27 and Figure 28 (cases A, B, and C). If no valley is found during t SenseFET is forced to turn on at the end of t
, the internal
W
(case D).
W
Therefore, FSQ devices have a minimum switching frequency of 55kHz and a maximum switching frequency of 67kHz, as shown in Figure 28.
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 14
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
I
DS
I
DS
t
=15s
B
I
DS
max
t
s
tB=15s
t
tB=15s
t
=18s
s
s
When the resonant period is 2s
I
DS
A
I
DS
B
67kHz
59kHz 55kHz
Burst mode
FSQ0365RN Rev. 00
A
C
B
Constant frequency
D
P
O
Figure 28. Switching Frequency Range
I
DS
C
t
s
I
=15s
t
B
DS
tW=3s
max
=18s
t
s
I
DS
D
FSQ0365RN Rev. 00
Figure 27. Valley Switching with Limited Frequency
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 15
Typical Application Circuit of FSQ0365RN
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Application FPS Device
Input Voltage
Range
Rated Output Power
Output Voltage
(Maximum Current)
5.1V (1.0A)
DVD Player
Power Supply
FSQ0365RN 85-265V
19W
AC
3.4V (1.0A)
12V (0.4A)
16V (0.3A)
Features
High efficiency ( >77% at universal input) Low standby mode power consumption (<1W at 230V
input and 0.5W load)
AC
Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft-start: 15ms
Key Design Notes
The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering
of OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms).
The input voltage of V
voltage can be adjusted.
The SMD-type 100nF capacitor must be placed as close as possible to V
pulsating noises and to improved surge immunity
must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input
sync
pin to avoid malfunction by abrupt
CC
.
Schematic
RT101
5D-9
2
BD101
1
Bridge
Diode
4
C102
100nF,275V
AC
LF101
40mH
C101 100nF 275V
AC
TNR
10D471K
AC IN
3
C103 33F 400V
F101
FUSE
R105
100k
FSQ0365RN
5
V
str
4
Sync
3
FB
C104 10nF 630V
R108
62
IC101
GND
Drain Drain Drain
V
1
1N4746A
8 7 6
2
cc
ZD101
D101
1N 4007
C106
100nF
SMD
C107 22F
50V
1N 4004
C110 33pF
50V
D102
R103
5
R104 12k
6.2k
6.2k
R106
R107
C105 47nF
50V
R102 56k
Figure 29. Demo Circuit of FSQ0365RN
EER2828
1
2
3
4
5
1N4148
D103
C302
3.3nF
IC202
FOD817A
T101
11
10
12
6
9
8
UF4003
IC201 KA431
D201
UF4003
C210 47pF
D202
D203
SB360
D204
SB360
R201 510
C209 47pF
R202
1k
C201
470F
35V
470F
R204
20k
C203
35V
L201
L202
L203
C205
1000F
10V
L204
C207
1000F
10V
C209
100nF
R205
6k
C202
470F
35V
C204
470F
35V
R203
6.2k
16V, 0.3A
12V, 0.4A
5.1V, 1A
C206
1000F
10V
C208
1000F
10V
FSQ0365RN Rev:00
3.4V, 1A
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 16
Transformer
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
Np/2
Np/2
N
EER2828
1
2
3
4
a
5
12
11
10
9
8
7
6
Figure 30. Transformer Schematic Diagram of FSQ0365RN
Table 1. Winding Specification
No.
Np/2
Pin (sf)
2 0.25
3
Insulation: Polyester Tape t = 0.050mm, 2-Layer
N
3.4V
8 0.33
9
Insulation: Polyester Tape t = 0.050mm, 2-Layer
N5V
9 0.33
6
Insulation: Polyester Tape t = 0.050mm, 2-Layer
Na
5 0.25
4
Insulation: Polyester Tape t = 0.050mm, 2-Layer
N
12V
12 0.33
10
Insulation: Polyester Tape t = 0.050mm, 3-Layer
N
16V
12 0.33
11
Insulation: Polyester Tape t = 0.050mm, 2-Layer
Np/2
1 0.25
2
Insulation: Polyester Tape t = 0.050mm, 2-Layer
Wire Turns Winding Method
N
N
N
N
16V
12V
3.4V
5.1V
x 1
x 2
x 1
x 1
x 3
x 3
x 1
Np/2 N
16V
N
12V
N
a
N
6mm 3mm
N
Np/2
5.1V
3.4V
FSQ0365RN Rev: 00
50 Center Solenoid Winding
4 Center Solenoid Winding
2 Center Solenoid Winding
16 Center Solenoid Winding
14 Center Solenoid Winding
18 Center Solenoid Winding
50 Center Solenoid Winding
Table 2. Electrical Characteristics
Pin Specification Remarks
Inductance 1 - 3 1.4mH ± 10% 100kHz, 1V
Leakage 1 - 3 25µH Maximum Short All Other Pins
Core & Bobbin
Core: EER2828 (Ae=86.66mm
2
)
Bobbin: EER2828
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 17
Table 3. Demo Board Part List
Part Value Note Part Value Note
Resistor Inductor
R102 56k 1W L201 10µH
R103 5 1/2W L202 10µH
R104 12k 1/4W L203 4.9µH
R105 100k 1/4W L204 4.9µH
R106 6.2k 1/4W
R107 6.2k 1/4W D101 IN4007
R108 62 1W D102 IN4004
R201 510 1/4W ZD101 1N4746A
R202 1k 1/4W D103 1N4148
R203 6.2k 1/4W D201 UF4003
R204 20k 1/4W D202 UF4003
R205 6k 1/4W D203 SB360
Capacitor
D204 SB360
C101 100nF/275VAC Box Capacitor
C102 100nF/275VAC Box Capacitor
C103 33µF/400V Electrolytic Capacitor IC101 FSQ0365RN FPS™
C104 10nF/630V Film Capacitor IC201 KA431 (TL431) Voltage reference
C105 47nF/50V Mono Capacitor IC202 FOD817A Opto-coupler
C106 100nF/50V SMD (1206)
C107 22µF/50V Electrolytic Capacitor Fuse 2A/250V
C110 33pF/50V Ceramic Capacitor
C201 470µF/35V Electrolytic Capacitor RT101 5D-9
C202 470µF/35V Electrolytic Capacitor
C203 470µF/35V Electrolytic Capacitor BD101 2KBP06M2N257 Bridge Diode
C204 470µF/35V Electrolytic Capacitor
C205 1000µF/10V Electrolytic Capacitor LF101 40mH
C206 1000µF/10V Electrolytic Capacitor
C207 1000µF/10V Electrolytic Capacitor T101
C208 1000µF/10V Electrolytic Capacitor
C209 100nF /50V Ceramic Capacitor TNR 10D471K
Diode
IC
Fuse
NTC
Bridge Diode
Line Filter
Transformer
Varistor
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 18
Package Dimensions
A
(.092) [Ø2.337]
.400
10.15
.373
9.46
[
.036 [0.9 TYP]
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
]
PIN #1
.021
0.53
.015
0.37
[
.001[.025]
NOTES:
A. CONFORMS TO JEDEC REGISTRATION MS-001, VARIATIONS BA B. CONTROLING DIMENSIONS ARE IN INCHES REFERENCE DIMENSIONS ARE IN MILLIMETERS C. DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCHES OR 0.25MM. D. DOES NOT INCLUDE DAMBAR PROTRUSIONS. DAMBAR PROTRUSIONS SHALL NOT EXCEED .010 INCHES OR 0.25MM. E. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
[5.33]
(.032) [R0.813]
PIN #1
.310±.010 [7.87±0.25]
7° TYP
TOP VIEW OPTION 2
.060 MAX
[1.52]
+.005
.010
-.000
.300
[7.62]
.430 MAX
[10.92]
0.254
[
+0.127
-0.000
]
.250±.005 [6.35±0.13]
TOP VIEW
OPTION 1
.070 .045
7° TYP
C
]
C
.100
[2.54]
B
1.78
1.14
[
]
.130±.005 [3.3±0.13]
.015 MIN
[0.38]
.140
3.55
[
.125
3.17
.210 MAX
]
N08EREVG
Figure 31. 8-Lead , Dual Inline Package (DIP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 19
.
Package Dimensions (Continued)
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
MKT-MLSOP08ArevA
Figure 32. 8-Lead , MLSOP
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 20
.
FSQ0365/0265/0165/321 — Green Mode Fairchild Power Switch (FPS™) for Valley Switching Converter
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6 21
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