Fairchild FSGM300N service manual

FSGM300N
FSGM300N — Green-Mode Fairchild Power Switch (FPS™)
April 2012
Green-Mode Fairchild Power Switch (FPS™)
Features
Standby Power
Random Frequency Fluctuation for Low EMI Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis, Output-Short Protection (OSP), and Under-Voltage Lockout (UVLO) with Hysteresis
Auto-Restart Mode Internal Startup Circuit Internal High-Voltage SenseFET: 650V Built-in Soft-Start: 15ms
Applications
Power Supply for LCD Monitor, STB and DVD
Combination
Description
The FSGM300N is an integrated Pulse Width Modulation (PWM) controller and SenseFET specifically designed for offline Switch-Mode Power Supplies (SMPS) with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout (UVLO), Leading­Edge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the FSGM series can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform suited for cost-effective design of a flyback converter.
Related Resources
Fairchild Power Supply WebDesigner — Flyback
Design & Simulation - In Minutes at No Expense
Ordering Information
(2)
(4)
Open
Frame
Replaces
(5)
Device
Operating
Part Number Package
FSGM300N 8-DIP
Notes:
1. Pb-free package per JEDEC J-STD-020B.
2. The junction temperature can limit the maximum output power.
3. 230V
4. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
5. Maximum practical continuous power in an open-frame design at 50°C ambient temperature.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSGM300N • Rev. 1.0.3
or 100/115VAC with voltage doubler.
AC
Junction
Temperature
-40°C ~ +125°C
Current
Limit
1.60A
R
DS(ON)
(Max.)
2.2Ω
Adapter
Output Power Table
230VAC ± 15%
(4)
26W 40W 20W 30W FSFM300N
(3)
85-265VAC
Open
Frame
(5)
Adapter
Application Circuit
FSGM300N — Green-Mode Fairchild Power Switch (FPS™)
Internal Block Diagram
V
burst
0.5V / 0.7V
FB
N.C. 4
V
3
V
OSP
V
SD
6V
V
CC
V
OVP
24V
V
CC
I
DELAY
tON<t
OSP
ref
(1.0μs)
I
FB
LPF
Figure 1. Typical Application Circuit
V
Random
OSC
Soft-Start
PWM
3R
R
TSD
VCCgood
LEB(400ns)
Figure 2. Internal Block Diagram
STR
5 2
I
CH
V
ref
VCCgood
SQ
Q
R
SQ
Q
R
Gate
Driver
V
CC
7.7V / 12V
V
AOCP
Drain
6, 7, 8
FSGM300N
1
GND
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSGM300N • Rev. 1.0.3 2
Pin Configuration
FSGM300N — Green-Mode Fairchild Power Switch (FPS™)
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name Description
1 GND
2 VCC
3 FB
4 NC No Connection.
5 V
6, 7, 8 Drain
STR
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input, which provides the internal operating
current for both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6V, the overload protection triggers, which shuts down the FPS.
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link. At startup, the internal high-voltage current source supplies internal bias and charges the external capacitor connected to the V source (I
SenseFET Drain. High-voltage power SenseFET drain connection.
) is disabled.
CH
pin. Once VCC reaches 12V, the internal current
CC
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSGM300N • Rev. 1.0.3 3
FSGM300N — Green-Mode Fairchild Power Switch (FPS™)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
V
V
STR
V
DS
V
CC
V
FB
I
DM
I
Continuous Switching Drain Current
DS
EAS
PD
Pin Voltage
STR
Drain Pin Voltage
VCC Pin Voltage
Feedback Pin Voltage
Drain Current Pulsed
Single Pulsed Avalanche Energy
(7)
Total Power Dissipation (TC=25°C)
(6)
TC=25°C
TC=100°C
(8)
Maximum Junction Temperature
T
J
T
STG
ESD
Operating Junction Temperature
Storage Temperature
Electrostatic Discharge Capability
Human Body Model, JESD22-A114 2
Charged Device Model, JESD22-C101 2
(9)
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (D and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25°C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
650 V
650 V
26 V
-0.3 8.0 V
4 A
1.90 A
1.27 A
190 mJ
1.5 W
150
-40
+125
-55 +150
°C
°C
°C
kV
=0.83)
MAX
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol Parameter Value Unit
JA Junction-to-Ambient Thermal Impedance
JC Junction-to-Case Thermal Impedance
JT Junction-to-Top Thermal Impedance
Notes:
10. Infinite cooling condition (refer to the SEMI G30-88).
11. Free standing with no heat-sink under natural convection.
12. Measured on the package top surface.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSGM300N • Rev. 1.0.3 4
(10)
80 °C/W
(11)
20 °C/W
(12)
35
Electrical Characteristics
TJ=25°C unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
SenseFET Section
BV
Drain-Source Breakdown Voltage
DSS
I
Zero-Gate-Voltage Drain Current
DSS
R
Drain-Source On-State Resistance VGS=10V, ID=1A 1.8 2.2
DS(ON)
C
Input Capacitance
ISS
C
Output Capacitance
OSS
(13)
V
(13)
V
V
=0V, ID=250μA
CC
V
=520V, TA=125°C
DS
=25V, VGS=0V, f=1MHz 515 pF
DS
=25V, VGS=0V, f=1MHz 75 pF
DS
tr Rise Time VDS=325V, ID=4A, RG=25 26 ns
tf Fall Time VDS=325V, ID=4A, RG=25 25 ns
t
Turn-On Delay Time VDS=325V, ID=4A, RG=25 14 ns
d(on)
t
Turn-Off Delay Time VDS=325V, ID= 4A, RG=25 32 ns
d(off)
Control Section
f
Switching Frequency
S
Δf
D
MAX
D
MIN
Switching Frequency Variation
S
Maximum Duty Ratio V
Minimum Duty Ratio V
(13)
V
(13)
-25°C < T
=14V, VFB=4V 61 67 73 kHz
CC
=14V, VFB=4V 71 77 83 %
CC
=14V, VFB=0V 0 %
CC
< 125°C
J
IFB Feedback Source Current VFB=0 120 150 180
V
START
V
STOP
UVLO Threshold Voltage
After Turn-on, V
V
=0V, V
FB
Sweep 11 12 13 V
CC
=0V 7.0 7.7 8.5 V
FB
VOP VCC Operating Range 13 22.5 V
t
Internal Soft-Start Time V
S/S
Burst-Mode Section
V
BURH
V
BURL
Burst-Mode Voltage VCC=14V, VFB Sweep
0.4 0.5 0.6 V
STR
=40V, V
Sweep 15 ms
CC
Hys 200 mV
Protection Section
I
Peak Drain Current Limit
LIM
V
Shutdown Feedback Voltage V
SD
I
Shutdown Delay Current V
DELAY
t
Leading-Edge Blanking Time
LEB
V
Over-Voltage Protection VCC Sweep 22.5 24.0 25.5 V
OVP
t
OSP
V
OSP
t
OSP_FB
T
SD
Output-Short
Threshold VFB 1.4 1.6 1.8 V
Protection
V
Thermal Shutdown Temperature
Threshold Time
(13)
FB
di/dt=300mA/μs
=14V, V
CC
=14V, VFB=4V 2.0 2.7 3.4
CC
(13)(15)
400 ns
OSP Triggered when t
ON<tOSP
Blanking Time 2.0 2.5 3.0
(Lasts Longer than t
Shutdown Temperature 125 135 145
(13)
Sweep 5.5 6.0 6.5 V
FB
& VFB>V
OSP
OSP_FB
Hys Hysteresis 40
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSGM300N • Rev. 1.0.3 5
650 V
250
±5 ±10 %
0.6 0.7 0.8 V
1.44 1.60 1.76 A
0.7 1.0 1.3
)
Continued on the following page…
μA
μA
μA
μs
μs
°C
°C
FSGM300N — Green-Mode Fairchild Power Switch (FPS™)
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