Fairchild FSEZ1317A service manual

May 2012
FSEZ1317A Primary-Side-Regulation PWM with POWER MOSFET Integrated
FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated
Features
Low Standby Power Under 30mW
Control without Secondary-Feedback Circuitry
Green-Mode: Linearly Decreasing PWM Frequency Fixed PWM Frequency at 50kHz with Frequency
Hopping to Solve EMI Problem
Cable Compensation in CV Mode Peak-Current-Mode Control in CV Mode Cycle-by-Cycle Current Limiting VV
Over-Voltage Protection with Auto Restart
DD
Under-Voltage Lockout (UVLO)
DD
Gate Output Maximum Voltage Clamped at 15V Fixed Over-Temperature Protection with
Auto Restart
Available in the 7-Lead SOP Package
Applications
Description
This third-generation Primary-Side-Regulation (PSR) and highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. The proprietary topology, TRUECURRENT®, of FSEZ1317A enables precise CC regulation and simplified circuit design for battery-
charger applications. A low-cost, smaller, and lighter
charger results, as compared to a conventional design or a linear transformer.
To minimize standby power consumption, the proprietary green mode provides off-time modulation to linearly decrease PWM frequency under light-load conditions. Green mode assists the power supply in meeting power conservation requirements.
By using the FSEZ1317A, a charger can be implemented with few external components and minimized cost. A typical output CV/CC characteristic envelope is shown in Figure 1.
Battery chargers for cellular phones, cordless
phones, PDA, digital cameras, power tools, etc.
Replaces linear transformers and RCC SMPS
Related Resources
Evaluation Board: FEBFSEZ1317A_CH310v3
Figure 1. Typical Output V-I Characteristic
Fairchild Power Supply WebDesigner — Flyback
Design & Simulation - In Minutes at No Expense
Ordering Information
Part Number
FSEZ1317AMY_F116 -40°C to +105°C 7-Lead, Small Outline Package (SOP-7) Tape & Reel
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1317A • Rev. 1.0.3
Operating
Temperature Range
Package
Packing
Method
Application Diagram
AC
Input
D
1
R
F
D
2
D
4
D
3
FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated
C
R
sn2
L
1
R
sn2
R
C
1
C
2
D
C
VDD
VDD
2
DRAIN
HV
7
CS
COMR
3
GND
VS
sn1
Fa
C
sn
D
sn
C
VS
5
8
1
4
C
CR
R
R
R
T
1
2
SENSE
sn
1
D
F
DC
R
C
C
O1
d
O2
Output
Internal Block Diagram
Pattern
Generator
V
RESET
Figure 2. Typical Application
OSC
V
RESET
Max.
Duty
Soft
Driver
PWM
Figure 3. Functional Block Diagram
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1317A • Rev. 1.0.3 2
Marking Information
Pin Configuration
Figure 4. Top Mark
FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated
F: Fairchild Logo
Z: Plant Code X: 1-Digit Year Code Y: 1-Digit Week Code TT: 2-Digit Die Run Code T: Package Type (M=SOP) P: Y=Green Package M: Manufacture Flow Code
Figure 5. Pin Configuration
Pin Definitions
Pin # Name Description
1 CS
2 VDD
3 GND
4 COMR
5 VS
7 HV
8 DRAIN
Current Sense. This pin connects a current-sense resistor, to detect the MOSFET current for
peak-current-mode control in CV mode, and provides the output-current regulation in CC mode.
Power Supply. IC operating current and MOSFET driving current are supplied using this pin.
This pin is connected to an external V startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA.
Ground Cable Compensation. This pin connects a 1µF capacitor between the COMR and GND pins
for compensation voltage drop due to output cable loss in CV mode.
Voltage Sense. This pin detects the output voltage information and discharge time based on
voltage of auxiliary winding.
High Voltage. This pin connects to bulk capacitor for high-voltage startup. Driver Output. Power MOSFET drain. This pin is the high-voltage power MOSFET drain.
capacitor of typically 10µF. The threshold voltages for
DD
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1317A • Rev. 1.0.3 3
FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Units
V
HV Pin Input Voltage 500 V
HV
V
DC Supply Voltage
VDD
VVS VS Pin Input Voltage -0.3 7.0 V
VCS CS Pin Input Voltage -0.3 7.0 V
V
Voltage Error Amplifier Output Voltage -0.3 7.0 V
COMV
V
Current Error Amplifier Output Voltage -0.3 7.0 V
COMI
VDS Drain-Source Voltage 700 V
ID Continuous Drain Current
IDM Pulsed Drain Current 4 A
EAS Single Pulse Avalanche Energy 50 mJ
IAR Avalanche Current 1 A
PD
θ
Power Dissipation (TA<50°C)
Thermal Resistance (Junction-to-Air) 150 °C/W
JA
ΨJT Thermal Resistance (Junction-to-Case) 39 °C/W
TJ Operating Junction Temperature -40 +150 °C
T
Storage Temperature Range -55 +150 °C
STG
TL Lead Temperature (Wave soldering or IR, 10 seconds) +260 °C
Electrostatic
ESD
Discharge Capability (Except HV Pin)
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
2. All voltage values, except differential voltages, are given with respect to the GND pin.
3. ESD ratings including HV pin: HBM=500V, CDM=1250V.
(1,2)
30 V
TA=25°C 1 A
TA=100°C 0.6 A
660 mW
Human Body Model, JEDEC-JESD22_A114 5000
V
Charged Device Model, JEDEC-JESD22_C101
2000
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Min. Max. Units
TA Operating Ambient Temperature -40 +105 °C
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1317A • Rev. 1.0.3 4
Electrical Characteristics
Unless otherwise specified, VDD=15V and TA=25.
Symbol Parameter Conditions Min. Typ. Max. Units
VDD Section
VOP Continuously Operating Voltage 23 V
V
Turn-On Threshold Voltage 15 16 17 V
DD-ON
V
Turn-Off Threshold Voltage 4.5 5.0 5.5 V
DD-OFF
I
DD-OP
I
DD-GREEN
V
DD-OVP
V
DD-OVP-HYS
t
D-VDDOVP
Operating Current
Green-Mode Operating Supply Current
VDD Over-Voltage-Protection Level (OVP) 24 V
Hysteresis Voltage for VDD OVP 1.5 2.0 2.5 V
VDD Over-Voltage-Protection Debounce Time 50 200 300 µs
HV Startup Current Source Section
V
Minimum Startup Voltage on HV Pin 50 V
HV-MIN
IHV Supply Current Drawn from HV Pin VDC=100V 1.5 3.0 mA
HV=500V,
I
Leakage Current after Startup
HV-LC
VDD= V
+1V
OFF
DD-
Oscillator Section
f
Frequency
OSC
f
OSC-N-MIN
f
OSC-CM-MIN
Minimum Frequency at No-Load 370 Hz
Minimum Frequency at CCM 13 kHz
Center Frequency 47 50 53
Frequency Hopping Range ±3.5
fDV Frequency Variation vs. VDD Deviation VDD=10~25V, 1 2 %
T
=-40°C to
fDT Frequency Variation vs. Temperature Deviation
A
105°C
Voltage-Sense Section
Itc IC Bias Current 10 µA
V
BIAS-COMV
Adaptive Bias Voltage Dominated by V
R
COMV
=20k 1.4 V
VS
Current-Sense Section
tPD Propagation Delay to GATE Output
t
Minimum On Time at No-Load 590 795 1000 ns
MIN-N
VTH Threshold Voltage for Current Limit 0.8 V
Voltage-Error-Amplifier Section
VVR Reference Voltage 2.475 2.500 2.525 V
VN Green-Mode Starting Voltage on EA_V f
VG Green-Mode Ending Voltage on EA_V f
-5kHz 2.2 V
OSC
=1kHz 0.4 V
OSC
Current-Error-Amplifier Section
VIR Reference Voltage 2.475 2.500 2.525 V
Cable Compensation Section
V
COMR Pin for Cable Compensation 0.85 V
COMR
2.5 5.0 mA
0.95 1.45 mA
0.96 3.00 µA
kHz
15 %
90 200 ns
FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated
Continued on the following page…
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1317A • Rev. 1.0.3 5
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