Fairchild FSEZ1216B service manual

January 2009

FSEZ1216B

Primary-Side-Regulation PWM Integrated Power MOSFET

FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET

Features

 Constant-Voltage (CV) and Constant-Current (CC)

Control without Secondary-Feedback Circuitry

 Green-Mode Function: PWM Frequency Linearly

Decreasing

 Fixed PWM Frequency at 50kHz with Frequency

Hopping to Solve EMI Problems

 Cable Compensation in CV mode
 Low Startup Current: 10μA
 Low Operating Current: 3.5mA
 Peak-Current-Mode Control in CV Mode
 Cycle-by-Cycle Current Limiting
 V

 V

Over-Voltage Protection (OVP) with

DD

Auto-Restart

Under-Voltage Lockout (UVLO)

DD

 Fixed Over-Temperature Protection (OTP)

with Latch

 DIP-8 Package Available

Applications

Description

This highly integrated PWM controller provides several

features to enhance the performance of low-power
flyback converters. The proprietary topology enables
most simplified circuit design especially for battery
charger applications. A low-cost, smaller, and lighter
charger results when compared to a conventional
design or a linear transformer. The startup current is
only 10μA, which allows large startup resistance for
further power saving.

To minimize the standby-power consumption, the
proprietary green-mode function provides off-time
modulation to linearly decrease PWM frequency under
light-load conditions. This green-mode function assists
the power supply in meeting power conservation
requirements.

By using FSEZ1216B, a charger can be implemented
with few external components and minimized cost. A
typical output CV/CC characteristic envelope is shown
in Figure 1.

FSEZ1216B series controllers are available in an 8-pin
DIP package.

 Battery Chargers for Cellular Phones, Cordless

Phones, PDA, Digital Cameras, Power Tools

 Best Choice to Replace Linear Transformer and

RCC SMPS

Figure 1. Typical Output V-I Characteristic

Ordering Information

Part Number

FSEZ1216BNY -40°C to +105°C Green 8-Lead, Dual Inline Package (DIP-8) Tube

For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSEZ1216B Rev. 1.0.0

Operating

Temperature Range

Eco

Status

Package

Packing

Method

Application Diagram

FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET

Figure 2. Typical Application

Internal Block Diagram

V

sah

I

PK

Brownout

Protection

V

sah

Figure 3. Functional Block Diagram

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSEZ1216B Rev. 1.0.0 2

Marking Information

DXYTT DXYTT

ZXYTT

EZ1216B

TPM

Pin Configuration

Figure 4. Top Mark

CS

FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET

F- Fairchild Logo

Z- Plant Code
X- 1 Digit Year Code
Y- 1 Digit Week Code
TT: 2 Digits Die Run Code
T: Package Type (N=DIP)
P: Y: Green Package
M: Manufacture Flow Code

DRAIN

Pin Definitions

Pin # Name Description

Analog Input, Current Sense. Connected to a current-sense resistor for peak-current-mode

1 CS

2 COMR

3 COMI

4 COMV

5 VS

6 VDD Supply, Power Supply.

7 GND Voltage Reference, Ground.

8 DRAIN

control in CV mode. The current-sense signal is also provided for output-current regulation in
CC mode.

Analog Output, Cable Compensation. Connect a resistor between COMR and GND for cable
loss compensation in CV mode.

Analog Output, Current Compensation. Output of the current error amplifier. Connect a
capacitor between COMI pin and GND for frequency compensation.

Analog Output, Voltage Compensation. Output of the voltage error amplifier. Connect a
capacitor between COMV pin and GND for frequency compensation.

Analog Input, Voltage Sense. Output-voltage-sense input for output-voltage regulation.

Driver Output, Power MOSFET Drain. This pin is the high-voltage power MOSFET drain

COMR

COMI

COMV

Figure 5. Pin Configuration

GND

VDD

VS

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSEZ1216B Rev. 1.0.0 3

FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Min. Max. Unit

V

DC Supply Voltage

VDD

VVS VS Pin Input Voltage -0.3 7.0 V

VCS CS Pin Input Voltage -0.3 7.0 V

V

Voltage-Error Amplifier Output Voltage -0.3 7.0 V

COMV

V

Voltage-Error Amplifier Output Voltage -0.3 7.0 V

COMI

VDS Drain-Source Voltage 600 V

ID Continuous Drain Current

IDM Pulsed Drain Current 4 A

EAS Single-Pulse Avalanche Energy 33 mJ

IAR Avalanche Current 1 A

PD

Rθ

JA

RθJC

Power Dissipation (T

Thermal Resistance (Junction-to-Air) 113 °C/W

Thermal Resistance (Junction-to-Case) 67 °C/W

TJ Operating Junction Temperature +150 °C

T

Storage Temperature Range -55 +150 °C

STG

TL Lead Temperature (Wave Soldering or IR, 10 Seconds) +260 °C

Electrostatic Discharge Capability, Human Body Model,

ESD

JEDEC: JESD22-A114

Electrostatic Discharge Capability, Charged Device
Model, JEDEC: JESD22-C101

Notes:

1. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.

2. All voltage values, except differential voltages, are given with respect to GND pin.

(1,2)

30 V

TC=25°C 1 A

=100°C 0.6 A

T

C

＜50°C)

A

800 mW

3.0 KV

1000 V

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.

Symbol Parameter Min. Typ. Max. Unit

TA Operating Ambient Temperature -40 +105 °C

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSEZ1216B Rev. 1.0.0 4

Electrical Characteristics

VDD=15V, TA=25°C, unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Units

VDD SECTION

VOP Continuously Operating Voltage 25 V

V

Turn-On Threshold Voltage 15 16 17 V

DD-ON

V

Turn-Off Threshold Voltage 4.5 5.0 5.5 V

DD-OFF

I

Startup Current 0<VDD<V

DD-ST

V

=20V, fS=f

I

Operating Current

DD-OP

I

DD-GREEN

V

DD-OVP

t

D-VDDOVP

Green-Mode Operating Supply
Current

Over-Voltage-Protection

V

DD

Level

Over-Voltage-Protection

V

DD

Debounce Time

DD

VVS=2V, VCS=3V,
C

=1nF

L

=20V, VVS=2.7V

V

DD

=0V, V

V

CS

f

S=fOSC-N-MIN

=2.3V, VCS=3V 27 28 29 V

V

VS

f

S=fOSC

OSCILLATOR SECTION

Center

f

Frequency

OSC

Frequency

Frequency­Hopping Range

t

Frequency-Hopping Period VCS=1.5V, VVS=2V 2.56 ms

FHR

f

OSC-N-MIN

f

OSC-CM-MIN

Minimum Frequency at No-Load VVS=2.7V, V

Minimum Frequency at CCM VVS=2.3V, VCS=0.5V 18 KHz

fDV

fDT

Frequency Variation vs. V
Deviation

Frequency Variation vs.
Temperature Deviation

DD

=25°C, VVS=2.3V 48 50 55

T

A

=1.5V, VVS=2V ±1.0 ±1.5 ±2.3

V

CS

=10V to 25V 5 %

V

DD

=-40°C to 105°C 15 %

T

A

VOLTAGE-SENSE SECTION

I

VS-UVP

Itc IC Compensation Bias Current 9.5 μA

V

BIAS-COMV

Sink Current for Brownout
Protection

Adaptive Bias Voltage
Dominated by V

COMV

=20KΩ 125 μA

R

VS

=0V,RVS=20KΩ 1.4 V

V

COMV

-0.16V 10 20 μA

DD-ON

,

OSC

3.5 5.0 mA

COMV

=0V

1 2 mA

, CL=1nF

, VVS=2.3V 100 250 400 μs

KHz

=0V 500 Hz

COMV

FSEZ1216B — Primary-Side-Regulation PWM Integrated Power MOSFET

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSEZ1216B Rev. 1.0.0 5