Fairchild FSEZ1016A service manual

FSEZ1016A
Primary-Side-Regulation PWM Integrated Power MOSFET
FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET
January 2010
Features
Control without Secondary-Feedback Circuitry
Accurate Constant Current Achieved by Fairchild’s
Proprietary TRUECURRENT™ Technique
Green Mode: Frequency Reduction at Light-Load Fixed PWM Frequency at 43kHz with Frequency
Hopping to Reduce EMI
Low Startup Current: 10μA Maximum Low Operating Current: 3.5mA Peak-Current-Mode Control in CV Mode Cycle-by-Cycle Current Limiting Over-Temperature Protection (OTP)
with Auto-Restart
Brownout Protection with Auto-Restart V
V
Over-Voltage Protection (OVP) with
DD
Auto-Restart
Under-Voltage Lockout (UVLO)
DD
SOIC-7 Package
Applications
Description
This primary-side PWM integrated power MOSFET significantly simplifies power supply designs that require CV and CC regulation capabilities. FSEZ1016A controls the output voltage and current precisely with only the information in the primary side of the power supply, not only removing the output current sensing loss, but also eliminating all secondary feedback circuitry.
The green-mode function with a low startup current (10µA) maximizes the light-load efficiency so the power supply can meet stringent standby power regulations.
Compared with conventional secondary-side regulation approach; the FSEZ1016A can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability.
FSEZ1016A is available in a 7-pin SOIC package.
A typical output CV/CC characteristic envelope is shown in Figure 1.
Battery Chargers for Cellular Phones, Cordless
Phones, PDAs, Digital Cameras, Power Tools
Replaces Linear Transformer and RCC SMPS Offline High Brightness (HB) LED Drivers
Related Resources
Figure 1. Typical Output V-I Characteristic
AN-6067 Design Guide for FAN100/102 and
FSEZ1016A/1216
Ordering Information
Operating
Part Number
Temperature
Range
FSEZ1016AMY -40°C to +125°C 600V
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1016A • Rev. 1.0.2
MOSFET
BV
DSS
MOSFET
R
DS(ON)
9.3Ω
(Typical)
Eco
Status
Green
Package
7-Lead, Small Outline Integrated Circuit Package (SOIC)
Packing
Method
Tape & Reel
Application Diagram
Bridge
rectifier
diode
FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET
R
C
SN2
SN2
V
O
R
D
DD
SN1CSN1
D
SN
N
P
V
DL
+
R
C
-
DL
START
D
R
N
S
C
O
I
O
AC line
R
CS
C
COMI
R
COMI
Internal Block Diagram
C
DD
FSEZ1016A
CS
1
2
GND
3
COMI
COMV
4 5
C
COMV
R
COMV
DRAIN
VDD
8
6
VS
Figure 2. Typical Application
N
A
R
S1
R
S2
C
S
Figure 3. Functional Block Diagram
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1016A • Rev. 1.0.2 2
Marking Information
ZXYTT
EZ1016A
TPM
Pin Configuration
FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET
F - Fairchild Logo
Z - Plant Code X – 1-Digit Year Code Y – 1-Digit Week Code TT – 2-Digit Die Run Code T - Package Type (M=SOIC) P - Y: Green Package M - Manufacture Flow Code
Figure 4. Top Mark
Pin Definitions
Pin # Name Description
1
2
3
4
5
6
7
8
CS
GND
COMI
COMV
VS
VDD
NC No connection.
DRAIN
Current Sense. This pin connects a current sense resistor to sense the MOSFET current for peak-current-mode control in CV mode and provides for output-current regulation in CC mode.
Ground.
Constant Current Loop Compensation. This pin connects a capacitor and a resistor between
COMI and GND for compensation current loop gain.
Constant Voltage Loop Compensation. This pin connects a capacitor and a resistor between COMV and GND for compensation voltage loop gain.
Voltage Sense. This pin detects the output voltage information and discharge time base on voltage of auxiliary winding. This pin connected two divider resistors and one capacitor.
Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external V threshold voltages for startup and turn-off are 16V and 5V, respectively. The operating current is lower than 5mA.
Drain. This pin is the high-voltage power MOSFET drain.
Figure 5. Pin Configuration
capacitor of typically 10µF. The
DD
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1016A • Rev. 1.0.2 3
FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
VDD DC Supply Voltage
VVS VS Pin Input Voltage -0.3 7.0 V
VCS CS Pin Input Voltage -0.3 7.0 V
V
Voltage-Error Amplifier Output Voltage -0.3 7.0 V
COMV
V
Voltage-Error Amplifier Output Voltage -0.3 7.0 V
COMI
VDS Drain-Source Voltage 600
ID Continuous Drain Current
IDM Pulsed Drain Current 4 A
EAS Single Pulse Avalanche Energy 33 mJ
IAR Avalanche Current 1 A
PD
Θ
ΘJC
Power Dissipation (T
Thermal Resistance (Junction-to-Air) 153 °C/W
JA
Thermal Resistance (Junction-to-Case) 39 °C/W
TJ Operating Junction Temperature -40 +150 °C
T
Storage Temperature Range -55 +150 °C
STG
TL Lead Temperature (Wave Soldering or IR, 10 Seconds) +260 °C
ESD
Electrostatic Discharge Capability
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
2. All voltage values, except differential voltages, are given with respect to GND pin.
(1,2)
30 V
V
T
=25°C 1.0 A
C
TC=100°C 0.6 A
50°C)
A
Human Body Model, JEDEC: JESD22-A114 Charged Device Model, JEDEC: JESD22-C101
660 mW
2
kV
2
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Conditions Min. Typ. Max. Unit
TA Operating Ambient Temperature -40 +125 °C
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1016A • Rev. 1.0.2 4
Electrical Characteristics
VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Units
VDD Section
VOP Continuously-Operating Voltage 25 V
V
Turn-On Threshold Voltage 15 16 17 V
DD-ON
V
Turn-Off Threshold Voltage 4.5 5.0 5.5 V
DD-OFF
I
Startup Current 0<VDD<V
DD-ST
V
=20V, fS= f
I
Operating Current
DD-OP
I
DD-GREEN
V
t
D-VDDOVP
Green Mode Operating Supply Current
VDD OVP Level
DD-OVP
V
OVP Debounce Time
DD
DD
VVS=2V, VCS=3V C
=1nF
L
=20V, VVS=2.7V
V
DD
=1nF, V
C
L
fS=f
OSC-N-MIN
VCS=3V, VVS=2.3V
fS=f
OSC
Oscillator Section
f
Frequency
OSC
f
Frequency Hopping Period TA=25°C 3 ms
FHR
f
OSC-N-MIN
f
OSC-CM-MIN
Minimum Frequency at No-Load VVS=2.7V, V
Minimum Frequency at CCM VVS=2.3V, VCS=0.5V 20 KHz
Center Frequency T
Frequency Hopping Range TA=25°C ±1.8 ±2.6 ±3.6
fDV Frequency Variation vs. VDD Deviation
fDT
Frequency Variation vs. Temperature Deviation
=25°C 40 43 46
A
T
=25°C, VDD=10V to
A
25V
TA=-40°C to +125°C 20 %
Voltage-Sense Section
I
Sink Current for Brownout Protection RVS=20k 180 μA
VS-UVP
Itc IC Compensation Bias Current 9.5 μA
=0V, TA=25°C,
V
V
BIAS-COMV
Adaptive Bias Voltage Dominated by V
COMV
COMV
=20K
R
VS
Current-Sense Section
tPD Propagation Delay to Gate Output 100 200 ns
= -0.8V, RCS=2k
V
t
Minimum On Time at No-Load
MIN-N
t
Minimum On Time in CC Mode VVS=0V, V
MINCC
V
VS
COMV
=1V
VTH Threshold Voltage for Current Limit 1.3 V
Current-Error-Amplifier Section
VIR Reference Voltage 2.475 2.500 2.525 V
I
Output Sink Current
I-SINK
I
Output Source Current
I-SOURCE
V
Output High Voltage
I-HGH
VCS=3V, V
VCS=0V, V
=0V
V
CS
-0.16V 3.7 10.0 μA
DD-ON
OSC
3.5 5.0 mA
COMV
=0V
1.0 2.5 mA
, VCS=0V
27 28 29 V
, VVS=2.3V
COMV
=0V 550 Hz
100 250 400 μs
5 %
1.4 V
1100 ns
=2V 300 ns
COMV
COMI
COMI
=2.5V
=2.5V
55 μA
55 μA
4.5 V
FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET
KHz
Continued on the following page…
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FSEZ1016A • Rev. 1.0.2 5
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