Fairchild FMBM5401 service manual
FMBM5401 PNP General Purpose Amplifier
FMBM5401
PNP General Purpose Amplifier
• This device has matched dies in SuperSOT-6.
C2
E1
C1
B2
E2
B1
pin #1
SuperSOTTM-6
Mark: .4S2
Absolute Maximum Ratings*
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J, TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage -150 V
Collector-Base Voltage -160 V
Emitter-Base Voltage -5.0 V
Collector Current - Continuous -600 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
On Characteristics*
h
FE1
DIVID1 Variation Ratio of h
h
FE2
DIVID2 Variation Ratio of h
h
FE3
DIVID3 Variation Ratio of h
©2005 Fairchild Semiconductor Corporation
FMBM5401 Rev. A
Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -150 V
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -160 V
Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 V
Collector Cut-off Current VCB = -120V, IE = 0
= -120V, IE = 0, Ta = 100°C
V
CB
-50
-50
Emitter Cut-off Current VEB = -3.0V, IC = 0 -50 nA
DC Current Gain VCE = -5V, IC = -1mA 50
Between Die 1 and Die 2 h
FE1
FE1
(Die1)/h
(Die2) 0.9 1.1
FE1
DC Current Gain VCE = -5V, IC = -10mA 60 240
Between Die 1 and Die 2 h
FE2
FE2
(Die1)/h
(Die2) 0.95 1.05
FE2
DC Current Gain VCE = -5V, IC = -50mA 50
Between Die 1 and Die 2 h
FE3
FE3
(Die1)/h
(Die2) 0.9 1.1
FE3
1
nA
µA
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FMBM5401 PNP General Purpose Amplifier
Electrical Characteristics
(Continued)
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
V
CE(sat)
V
BE(sat)
V
BE(on)
DEL Difference of V
Small Signal Characteristics
f
T
C
ob
NF Noise Figure V
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Thermal Characteristics
Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA
I
= -50mA, IB = -5mA
C
Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA
I
= -50mA, IB = -5mA
C
-0.2
-0.5
V
V
-1
-1
Base-Emitter On Voltage VCE = -5V, IC = -10mA -1 V
Between Die1 and Die 2 V
BE(on)
Current Gain Bandwidth Product VCE = -10V, IC = -10mA
BE(on)
(Die1)-V
(Die2) -8 8 mV
BE(on)
100 300 MHz
f = 100MHz
Output Capacitance VCB = -10V, IE = 0, f = 1MHz 6.0 pF
8.0 dB
TC = 25°C unless otherwise noted
= -5.0V, IC = -250µA,
CE
= 1.0KΩ, f = 10Hz to 15.7KHz
R
S
Symbol Parameter Value Units
P
D
R
θJA
* Device mounted on a 1 in 2 pad of 2 oz coppe
Total Device Dissipation 700 mW
Thermal Resistance, Junction to Ambient, Total 180 °C/W
V
V
FMBM5401 Rev. A
2
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