FMBM5401 PNP General Purpose Amplifier
FMBM5401
PNP General Purpose Amplifier
• This device has matched dies in SuperSOT-6.
C2
E1
C1
B2
E2
B1
pin #1
SuperSOTTM-6
Mark: .4S2
Absolute Maximum Ratings*
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J, TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage -150 V
Collector-Base Voltage -160 V
Emitter-Base Voltage -5.0 V
Collector Current - Continuous -600 mA
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
On Characteristics*
h
FE1
DIVID1 Variation Ratio of h
h
FE2
DIVID2 Variation Ratio of h
h
FE3
DIVID3 Variation Ratio of h
©2005 Fairchild Semiconductor Corporation
FMBM5401 Rev. A
Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -150 V
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -160 V
Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 V
Collector Cut-off Current VCB = -120V, IE = 0
= -120V, IE = 0, Ta = 100°C
V
CB
-50
-50
Emitter Cut-off Current VEB = -3.0V, IC = 0 -50 nA
DC Current Gain VCE = -5V, IC = -1mA 50
Between Die 1 and Die 2 h
FE1
FE1
(Die1)/h
(Die2) 0.9 1.1
FE1
DC Current Gain VCE = -5V, IC = -10mA 60 240
Between Die 1 and Die 2 h
FE2
FE2
(Die1)/h
(Die2) 0.95 1.05
FE2
DC Current Gain VCE = -5V, IC = -50mA 50
Between Die 1 and Die 2 h
FE3
FE3
(Die1)/h
(Die2) 0.9 1.1
FE3
1
nA
µA
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Electrical Characteristics
(Continued)
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min. Max Units
V
CE(sat)
V
BE(sat)
V
BE(on)
DEL Difference of V
Small Signal Characteristics
f
T
C
ob
NF Noise Figure V
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Thermal Characteristics
Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA
I
= -50mA, IB = -5mA
C
Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA
I
= -50mA, IB = -5mA
C
-0.2
-0.5
V
V
-1
-1
Base-Emitter On Voltage VCE = -5V, IC = -10mA -1 V
Between Die1 and Die 2 V
BE(on)
Current Gain Bandwidth Product VCE = -10V, IC = -10mA
BE(on)
(Die1)-V
(Die2) -8 8 mV
BE(on)
100 300 MHz
f = 100MHz
Output Capacitance VCB = -10V, IE = 0, f = 1MHz 6.0 pF
8.0 dB
TC = 25°C unless otherwise noted
= -5.0V, IC = -250µA,
CE
= 1.0KΩ, f = 10Hz to 15.7KHz
R
S
Symbol Parameter Value Units
P
D
R
θJA
* Device mounted on a 1 in 2 pad of 2 oz coppe
Total Device Dissipation 700 mW
Thermal Resistance, Junction to Ambient, Total 180 °C/W
V
V
FMBM5401 Rev. A
2
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Ω
β
β
Between Emitter-Base
0.1 1 10 100 1000
170
180
190
200
210
220
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
β
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain Figure 2. Collector-Emitter Saturation
vs Collector Current Voltage vs Collector Current
125 oC
25 oC
- 40 oC
200
150
100
VCE = 5V
125 oC
25 oC
0.4
ββββ
= 10
0.3
0.2
50
- TYPICAL PULSED CURRENT GAIN
0
FE
h
1E-4 1E-3 0.01 0.1 1
- 40 oC
IC - COLLECTOR CURRENT (A)
0.1
0.0
- COLLECTO R -EMITTER VOLTAGE (V)
0.1 1 10 100
CESAT
V
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
vs Collector Current vs Collector Current
1.0
1.0
0.8
0.6
0.4
- BASE-EMITTER VOLT AG E (V)
BESAT
0.2
V
- 40 oC
25 oC
125 oC
ββββ
0.1 1 10 100
IC - COLLECTOR CURRENT (mA)
= 10
0.8
0.6
0.4
- BASE-EMITTER ON VOLTAGE (V)
0.2
BC(ON)
V
- 40 oC
25 oC
125 oC
0.1 1 10 100
IC - COLLECTOR CURRENT (mA)
Figure 5. Collector-Cutoff Current Figure 6. Collector-Emitter Breakdown
vs Ambient Temperature Voltage with Resistance Between
Emitter-Base
100
10
1
V = 100V
CB
0.1
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AM BIE N T TE MPE RATU RE ( C )
A
°
VCE = 5V
FMBM5401 Rev. A
3
www.fairchildsemi.com
FMBM5401 PNP General Purpose Amplifier
Typical Performance Characteristics
Figure 7.Input and Output Capacitance
vs Reverse Voltage
200
VCE = 5V
150
125 oC
100
50
- TYPICAL PULSED CURRENT GAIN
0
FE
h
1E-4 1E-3 0 .01 0.1 1
- 40 oC
IC - COLLECTOR CURRENT (A)
25 oC
(Continued)
FMBM5401 Rev. A
4
www.fairchildsemi.com
Mechanical Dimensions
FMBM5401 PNP General Purpose Amplifier
SuperSOTTM-6
FMBM5401 Rev. A
Dimensions in Millimeters
5
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
A
CEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
Across the board. Around the w or ld. ™
The Power Franchise
®
Programmable Active Droop™
®
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FMBM5401 PNP General Purpose Amplifier
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
FMBM5401 Rev. A
Rev. I15
www.fairchildsemi.com
Loading...