Page 1
Discrete POWER & Signal
FMB200
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT-6
Mark: .N2
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 68.
FMB200
Technologies
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitt er Voltage 45 V
Collector-Base Voltage 60 V
Emitter-Base Volt age 6.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FMB200
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
700
5.6
Thermal Resistance, Junction to Ambient 180
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
Page 2
PNP Multi-Chip General Purpose Amplifier
(continued)
FMB200
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
BV
BV
I
CBO
I
CES
I
EBO
CBO
CEO
EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
I
= 10 µA, IB = 0
C
IC = 1.0 mA, IE = 0 45 V
60 V
Voltage*
Emitter-Base Breakdown Voltage
I
= 10 µA, IC = 0
E
6.0 V
Collector Cutoff Current VCB = 50 V, IE = 0 50 nA
Collector Cutoff Current VCE = 40 V, IE = 10 50 nA
Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
DC Current Gain
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base-Emitter S aturation Voltage IC = 10 mA, IB = 1.0 mA
)
I
= 100 µA, VCE = 1.0 V
C
= 10 mA, VCE = 1.0 V
I
C
= 150 mA, VCE = 5.0 V*
I
C
= 200 mA, IB = 20 mA*
I
C
= 200 mA, IB = 20 mA*
I
C
80
100
100
450
350
0.2
0.4
0.85
1.0
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF Noise Figure
Current Gain - Bandwidth Product V
= 20 V, IC = 20 mA 300 MHz
CE
Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
= 100 µA, VCE = 5.0 V,
I
C
= 2.0 kΩ, f = 1.0 kHz
R
G
2.5 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V
V
V
V
Typical Characteristics
T y pical Pulsed Current Gain
vs Collector Current
500
125 °C
400
300
25 °C
200
- 40 °C
100
0
0.01 0.1 1 10 100
FE
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
β
= 10
0.2
0.15
0.1
0.05
0
0.1 1 10 100 300
V - COLLECTOR EMITTER VOLTAGE (V)
CESAT
I - COLLECTOR CURRENT (mA)
C
125 ºC
25 °C
- 40 ºC
Page 3
Typical Characteristics (continued)
FMB200
PNP Multi-Chip General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
= 10
β
1
0.8
0.6
0.4
0.2
BESAT
V - BASE EMITTER VOLTAGE (V)
- 40 ºC
0
0.1 1 10 100 300
I - COLLECTOR CURRENT (mA)
C
25 °C
125 ºC
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 50V
CB
10
1
0.1
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
- 40 ºC
25 °C
125 ºC
0.4
0.2
0
0.1 1 10 100 200
BEON
V - BASE EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
CER
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
Collector Saturation Region
4
3
2
Ic =
100 uA
1
0
CE
V - COLLECTO R-EMITTER VOLTAGE (V)
I - BASE CURRENT (uA)
50 mA
100 300 700 2000 4000
300 mA
Ta = 25°C
Input and Output Capacitance
vs Revers e Voltage
100
10
CAPACITANCE (pF)
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
ce
f = 1.0 MHz
Cib
Cob
Page 4
Typical Characteristics (continued)
FMB200
PNP Multi-Chip General Purpose Amplifier
(continued)
Gain Bandwidth Product
vs Collector Current
40
V = 5V
ce
30
20
10
0
1102050100150
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
1
SOT-6
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
Power Dissipation vs
Ambient Temperature
TEMPERATURE ( C)
Switching Times vs
Collector Current
300
270
240
210
180
150
120
TIME (nS)
90
60
30
0
10 20 30 50 100 200 300
o
IB1 = IB2 = Ic / 10
V = 10 V
cc
t
f
t
d
I - COLLECTOR CURRENT (mA)
C
t
r
t
s
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