Page 1
FMBA14
C2
E1
C1
B2
E2
B1
pin #1
SuperSOT-6
Mark: .1N
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current
gain at collector currents to 1.0 A. Sourced from Process 05.
FMBA14
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Volt age 30 V
Collector-Base Voltage 30 V
Emitter-Base Volt age 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
= 25°C unless otherwise noted
A
Symbol Characteristic Max Units
FMBA14
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
700
5.6
Thermal Resistance, Junction to Ambient 180
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
Page 2
NPN Multi-Chip Darlington T ransistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage
I
= 100 µA, IB = 0
C
30 V
Collector-Cutoff Current VCB = 30 V, IE = 0 100 nA
Emitter-Cutoff Current VEB = 10 V, IC = 0 100 nA
DC Current Gain IC = 10 mA, VCE = 5.0 V
= 100 mA, VCE = 5.0 V
I
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
)
C
10K
20K
Base-Emitter On V ol tage IC = 100 mA, VCE = 5.0 V 2.0 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V,
200 MHz
f = 100 MHz
FMBA14
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
250
V = 5V
200
CE
150
100
50
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
- 40 °C
25 °C
I - COLLECTOR CURRENT (A)
C
Base-Emitter Saturation
Voltage vs Collector Current
2
= 1000
β
1.6
- 40 ºC
1.2
0.8
0.4
0
BESAT
V - BASE EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
125 ºC
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
= 1000
β
1.2
- 40 ºC
0.8
0.4
0
1 10 100 1000
- COLLECTOR EMITTER VOLTAGE (V)
CESAT
I - COLLECTOR CURRENT (mA)
C
25°C
125 ºC
Base Emitter ON Voltage vs
Collector Current
2
BEON
V - BASE EMITTER ON VOLTAGE (V)
1.6
1.2
0.8
0.4
- 40 ºC
25 °C
125 ºC
V = 5V
CE
0
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
Page 3
Typical Characteristics (continued)
FMBA14
NPN Multi-Chip Darlington T ransistor
(continued)
Collector-Cutoff Current
vs Am bie nt T e mperature
100
V = 30V
CB
10
1
0.1
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Input and Output Capacitance
vs Reverse Voltage
20
10
5
CAPACITANCE (pF)
2
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
ce
f = 1.0 MHz
Cib
Cob
Collector-Em it t er Brea kdown
Voltage with Resistance
Between Emit t er- Base
62.5
62
61.5
61
60.5
60
59.5
CER
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
Gain Bandwidth Product
vs Collector Current
50
V = 5V
ce
40
30
20
10
0
1102050100150
T
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
TEMPERATURE ( C)
o
Loading...