Datasheet FDU6612A Datasheet (Fairchild Semiconductor)

FDD6612A/FDU6612A

30V N-Channel PowerTrench



MOSFET

FDD6612A/FDU6612A

January 2002

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
extremely low R

DS( ON) , fast switching speed and

in a small package.

DS(ON)

Features

• 30 A, 30 V R

R

• Low gate charge (9 nC typical)

• Fast Switching

= 20 mΩ @ VGS = 10 V

DS(ON)

= 28 mΩ @ VGS = 4.5 V

DS(ON)

Applications

• DC/DC converter

• Motor Drives

• High performance trench technology for extremely

low R

DS(ON)

D

D

G

S

D-PAK

TO-252

(TO-252)

G DS

Absolute Maximum Ratings T

I-PAK

(TO-251AA)

o

=25

C unless otherwise noted

A

G

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Continuous Drain Current @TC=25°C (Note 3) 30 A

@TA=25°C (Note 1a) 9.5

Pulsed (Note 1a) 60

PD

TJ, T

STG

Power Dissipation @TC=25°C (Note 3) 36

@TA=25°C (Note 1a) 2.8

@T

Operating and Storage Junction Temperature Range -55 to +175

=25°C (Note 1b) 1.3

A

±20

V

W

°C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

(Note 1) 3.5

(Note 1a) 45

(Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity

FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units

FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75

2002 Fairchild Sem iconductor Corporation

FDD6612A/FDU6612A Rev D1 (W )

°C/W

°C/W

°C/W

FDD6612A/FDU6612A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=10 A 90 mJ

DSS

IAR Drain-Source Avalanche Current 10 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current V

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

= 250 µA,Referenced to 25°C

I

D

= 24 V, VGS = 0 V 1

DS

30 V

22

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA,Referenced to 25°C

I

D

VGS = 10 V, ID = 9.5 A

= 4.5 V, ID = 8 A

V

GS

= 10 V, ID = 9.5 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 9.5 A 22 S

1 1.6 3 V

-4.2

17
24
26

20
28
36

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 830 pF

iss

C

Output Capacitance 185 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.8

V

= 15 V, V

DS

f = 1.0 MHz

= 0 V,

GS

80 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 6 12 ns

d(on)

tr Turn–On Rise Time 10 18 ns

t

Turn–Off Delay Time 18 29 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 9 13 nC

Qgs Gate–Source Charge 2.8 nC

Qgd Gate–Drain Charge

V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GS

= 40V, ID = 9.5 A,

V

DS

= 5 V

V

GS

GEN

= 6 Ω

5 12 ns

3.1 nC

FDD6612A/FDU6612A Rev. D1 (W)

FDD6612A/FDU6612A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.3 A

VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and R

is guaranteed by design while R

θJC

θCA

a) R

θJA

1in2 pad of 2 oz copper

P

D

R

DS(ON)

VGS = 0 V, IS = 2.3 A (Note 2) 0.7 1.2 V

is determined by the user's board design.

= 45°C/W when mounted on a

is at T

DS(on)

and VGS = 10V. Package current limitation is 21A

J(max)

b) R

= 96°C/W when mounted

θJA

on a minimum pad.

FDD6612A/FDU6612A Rev. D1 (W)

Typical Characteristics

FDD6612A/FDU6612A

60

VGS = 10V

6.0V

50

40

30

20

10

, DRAIN-SOURCE CURRENT (A)

D

I

0

012345

5.0V

4.5V

4.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

3.5V

3.0V

2.2

2

VGS = 3.5V

1.8

1.6

1.4

1.2

1

0.8

4.0V

4.5V

5.0V

6.0V

8.0V
10V

0 102030405060

I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.8
ID = 9.5A

= 10V

V

GS

1.6

1.4

1.2

1

0.8

0.6

-50-25 0 255075100125150

, JUNCTION TEMPERATURE (oC)

T

J

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0

246810

, GATE TO SO URC E VOLT AGE (V)

V

GS

TA = 125oC

TA = 25oC

ID = 5A

Figure 3. On-Resistance Variation

withTemperature

40

VDS = 5V

32

24

16

, DRAIN CU RRENT (A)

D

I

8

0

12345 6

V

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

125oC

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage

100

VGS = 0V

10

1

0.1

0.01

0.001

0.0001

0 0.2 0.4 0 .6 0.8 1 1 .2 1.4

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLT AGE (V)

SD

with Source Current and Temperature

FDD6612A/FDU6612A Rev. D1 (W)

Typical Characteristics

FDD6612A/FDU6612A

10

ID = 9.5A

8

6

4

2

0

03691215

, GATE CHARGE (nC)

Q

g

VDS = 5V

10V

15V

1200

1000

C

800

600

400

200

0

0 5 10 15 20 2 5 30

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

ISS

C

OSS

C

RSS

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

100

R

LIMIT

DS(ON)

10

1

VGS = 10V

SINGLE PULSE

0.1
R

= 96oC/W

JA

θ

T

= 25oC

0.01

A

0.1 1 10 100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

100ms

1S

10S

DC

10ms

1ms

100µs

60

SINGLE PULSE

R

= 96oC/W

JA

θ

T

= 25oC

40

POWER (W)

20

0

0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

A

f = 1 MHz

V

= 0 V

GS

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum

Power Dissipation

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.01

0.02

Single Pulse

0.001

r(t), NORMALIZED EFFECTIVE

TRANSI ENT THER MAL RE SISTANCE

0.0001

0.0001 0.001 0.01 0.1 1 10 100 300

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R =

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6612A/FDU6612A Rev. D1 (W)

96°C/W

JA

θ

1

JA

θ

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4