Fairchild FDS9926A service manual
FDS9926A
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
July 2003
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
Features
6.5 A, 20 V. R
= 30 mΩ @ VGS = 4.5 V
DS(ON)
R
= 43 mΩ @ VGS = 2.5 V.
DS(ON)
• Optimized for use in battery protection circuits
• Low gate charge
• Battery protection
• Load switch
• Power management
4
3
2
1
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
Q1
6
7
Q2
8
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
±10
Drain Current – Continuous (Note 1a) 6.5 A
– Pulsed 20
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
(Note 1c)
1
0.9
Operating and Storage Junction Temperature Range –55 to +150
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9926A FDS9926A 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corp.
°C/W
FDS9926A Rev E (W)
Electrical Characteristics T
FDS9926A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
20 V
14
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±8 V, VDS = 0 V ±100
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.4 A
V
= 4.5 V, ID =6.5A, TJ=125°C
GS
0.6 1 1.5 V
–3
25
35
35
30
43
50
mV/°C
mΩ
On–State Drain Current VGS = 4.5 V, VDS = 5 V 15 A
Forward Transconductance VDS = 5 V, ID = 6.5 A 22 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 650 pF
Output Capacitance 150 pF
Reverse Transfer Capacitance
Gate Resistance
VDS = 10 V, V
GS
f = 1.0 MHz
V
= 15 mV, f = 1.0 MHz
GS
= 0 V,
85 pF
1.4
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 9 17 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 15 26 ns
Turn–Off Fall Time
Total Gate Charge 6.2 9 nC
Gate–Source Charge 1.2 nC
VDS = 10 V, ID = 3 A,
VGS = 4.5 V
Gate–Drain Charge
4 9 ns
1.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.3 V
Diode Reverse Recovery Time IF = 6.5 A, diF/dt = 100 A/µs 15 nS
Diode Reverse Recovery Charge 5 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
a) 78°/W when
mounted on a 0.5in
pad of 2 oz copper
is determined by the user's board design.
θCA
2
b) 125°/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS9926A Rev E (W)
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