Fairchild FDS6912A Datasheet

Page 1

FDS6912A

Dual N-Channel Logic Level PowerTrench MOSFET

July 2003

General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25oC unless otherwise noted

Features

• 6 A, 30 V. R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5 6 7 8

= 28 mΩ @ VGS = 10 V

DS(ON)

= 35 mΩ @ VGS = 4.5 V

DS(ON)

4 3 2 1

Symbol Parameter Ratings Units

DSS

GSS

TJ, T

STG

Drain-Source Voltage 30 V Gate-Source Voltage Drain Current – Continuous (Note 1a) 6 A

– Pulsed 20

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) (Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

± 20

1.0

0.9

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6912A FDS6912A 13’’ 12mm 2500 units

2003 Fairchild Semiconductor Corporation

°C/W °C/W

FDS6912A Rev D(W)

Page 2

FDS6912A

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSS

Drain–Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = 55°C

Gate–Source Leakage

VGS = ±20 V, VDS = 0 V ±100

30 V

mV/°C

µA nA

On Characteristics (Note 2)

GS(th)

∆VGS(th) ∆T

DS(on)

D(on)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source On–Resistance

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 5 A VGS = 10 V, ID = 6 A,TJ = 125°C

1 1.9 3 V

–4.5

19 24

27 On–State Drain Current VGS = 10 V, VDS = 5 V 20 A Forward Transconductance VDS = 10 V, ID = 6 A 25 S

28 35 44

mV/°C

mΩ

Dynamic Characteristics

iss

oss

rss

Input Capacitance 575 pF Output Capacitance 145 pF Reverse Transfer Capacitance Gate Resistance

VDS = 15 V, V

= 0 V,

f = 1.0 MHz

VGS = 15 mV, f = 1.0 MHz

65 pF

2.1

Ω

Switching Characteristics (Note 2)

t t t t Q Q Q

d(on)

d(off)

Turn–On Delay Time 8 16 ns Turn–On Rise Time 5 10 ns

VDD = 15 V, ID = 1 A, VGS = 10 V, R

GEN

= 6 Ω Turn–Off Delay Time 23 37 ns Turn–Off Fall Time Total Gate Charge 5.8 8.1 nC Gate–Source Charge 1.7 nC

VDS = 15 V, ID = 6 A, VGS = 5 V

Gate–Drain Charge

3 6 ns

2.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current 1.3 A Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A (Note 2) 0.75 1.2 V Voltage Diode Reverse Recovery Time 20 nS

Diode Reverse Recovery Charge

IF = 6 A, diF/dt = 100 A/µs

10 nC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a 0.5in pad of 2 oz copper

is determined by the user's board design.

θCA

b) 125°C/W when

mounted on a 0.02 in2 pad of 2 oz copper

c) 135°C/W when mounted on a

minimum mounting pad.

FDS6912A Rev D(W)

Page 3

Typical Characteristics

4.5V

3.5V

6.0V

5.0

4.5V

10.0V

FDS6912A

VGS = 10.0V

6.0V

, DRAIN CURRENT (A)

4.0V

3.0V

2.2

1.8

1.4

, NORMALIZED

DS(ON)

VGS = 3.5V

4.0

DRAIN-SOURCE ON-RESISTANCE

0 0.5 1 1.5 2

VDS, DRAIN-SOURCE VOLTAGE (V)

0.6 0 4 8 12 16 20

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = 6A

VGS = 10.0V

1.4

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.08

0.07

0.06

0.05

0.04

, ON-RESISTANCE (OHM)

0.03 TA = 25oC

DS(ON)

0.02

0.01

2 4 6 8 10

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 3A

Figure 3. On-Resistance Variation with

Temperature.

VDS = 5V

, DRAIN CURRENT (A)

1.5 2 2.5 3 3.5 4

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

-55oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

-55oC

FDS6912A Rev D(W)

Page 4

Typical Characteristics

100ms

100µs

P(pk)

SINGLE PULSE

0.01

FDS6912A

ID = 6A

, GATE-SOURCE VOLTAGE (V)

0 2 4 6 8 10 12

VDS = 10V

15V

Qg, GATE CHARGE (nC)

20V

800

600

iss

400

CAPACITANCE (pF)

200

rss

0 5 10 15 20

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

LIMIT

DS(ON)

, DRAIN CURRENT (A)

0.01

VGS = 10V

0.1

SINGLE PULSE

= 135oC/W

θJA

TA = 25oC

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

10ms

1ms

SINGLE PULSE

P(pk), PEAK TRANSIENT POWER (W)

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

= 135°C/W

θJA

TA = 25°C

f = 1MHz

VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.1

D = 0.5

0.2

0.1

0.05

0.02

(t) = r(t) * R

θJA

0.01 TJ - TA = P * R

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

Duty Cycle, D = t1 / t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

= 135°C/W

θJA

FDS6912A Rev D(W)

θJA

(t)

Page 5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOL T™ DOME™ EcoSPARK™ E2CMOS EnSigna

FACT™

FACT Quiet Series™



FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ImpliedDisconnect™ ISOPLANAR™

Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE T O ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC



OPTOPLANAR™ P ACMAN™ POP™

Power247™ PowerTrench



QFET



QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART ST ART™ SPM™ Stealth™ SuperSOT™-3

SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET



VCX™



FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I5