Fairchild FDS6982AS-D Datasheet

FDS6982AS

Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™

General Description

The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.

Applications

• Notebook

Features

• Q2: Optimized to minimize conduction losses

• Low gate charge (21nC typical)

• Q1: Optimized for low switching losses

• Low gate charge (11nC typical)

Includes SyncFET Schottky body diode

8.6A, 30V R

6.3A, 30V R

max= 13.5mΩ @ VGS = 10V

DS(on)

R

max= 16.5mΩ @ VGS = 4.5V

DS(on)

max= 28.0mΩ @ V

DS(on)

R

max= 35.0mΩ @ V

DS(on)

= 10V

GS

= 4.5V

GS

FDS6982AS

D1

D2

G1

S2

S1

G2

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

5

Q1

6 7

Q2

8

4 3 2 1

Symbol Parameter Q2 Q1 Units

V

DSS

V

GSS

ID Drain Current - Continuous (Note 1a) 8.6 6.3 A

PD Power Dissipation for Dual Operation 2 W

TJ, T

STG

Drain-Source Voltage 30 30 V

Gate-Source Voltage

- Pulsed 30 20

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

±20 ±20

1

0.9

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6982AS FDS6982AS 13” 12mm 2500 units

Publication Order Number:

FDS6982AS/D

FDS6982AS

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS ∆T

I

DSS

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain

Current

I

Gate-Body Leakage

GSS

VGS = 0 V, ID = 1 mA

= 0 V, ID = 250 uA

V

GS

I

= 1 mA, Referenced to 25°C

D

= 250 µA, Referenced to 25°C

I

D

Q1 Q2 Q1

VDS = 24 V, VGS = 0 V Q2

Q1

V

= ±20 V, VDS = 0 V

GS

Q2 Q1

30 30

28 24

500

±100

V

mV/°C

µA

1

nA

Q2

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

I

On-State Drain Current VGS = 10 V, VDS = 5 V Q2

D(on)

V

= VGS, ID = 250 µA

DS

ID = 1 mA, Referenced to 25°C

I

= 250 uA, Referenced to 25°C

D

VGS = 10 V, ID = 8.6 A

= 10 V, ID = 8.6 A, TJ = 125°C

V

GS

V

= 4.5 V, ID = 7.5 A

GS

V

= 10 V, ID = 6.3 A

GS

= 10 V, ID = 6.3 A, TJ = 125°C

V

GS

= 4.5 V, ID = 5.6 A

V

GS

gFS Forward Transconductance VDS = 5 V, ID = 8.6 A

= 5 V, ID = 6.3 A

V

DS

Q2 Q1 1 1

1.4

1.9 3 3

Q2 –3.1

Q1 –4.3

Q2 11

Q1 20

16 13

26

25

13.5

20.0

16.5

28

33

35

30

Q1 Q2

Q1

20

32

19

S

V

mV/°C

mΩ

A

Dynamic Characteristics

C

Input Capacitance Q2

iss

C

Output Capacitance Q2

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15mV, f = 1.0 MHz Q2

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

Q1

Q1 Q2 Q1

Q1

1250

610

410

180

130

85

1.4

2.2

pF

Ω

Switching Characteristics (Note 2)

t

Turn-On Delay Time Q2

d(on)

t

r

d(off)

f

d(on)

r

d(off)

f

Turn-On Rise Time Q2

Turn-Off Delay Time Q2

Turn-Off Fall Time

Turn-On Delay Time Q2

Turn-On Rise Time Q2

Turn-Off Delay Time Q2

Turn-Off Fall Time

= 15 V, ID = 1 A,

V

DD

= 10V, R

V

GS

V

= 15 V, ID = 1 A,

DD

= 4.5V, R

V

GS

GEN

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= 6 Ω

2

Q1

Q1 Q2 Q1

Q1

Q1 Q2 Q1

9

6 7 12

10

18 20

ns

14

27

24

44 39

ns

11 3 20 6 ns

12

13

19

10 5 20

12

14

15

22 22 23 25 34 27

ns

10

FDS6982AS

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)

Q

Qg

Qgs

Qgd

g

(TOT)

Total Gate Charge at Vgs=10V

Total Gate Charge at Vgs=5V

Gate–Source Charge

Gate–Drain Charge

Q2: V

= 15 V, ID = 11.5A

DS

Q1: V

= 15 V, ID = 6.3A

DS

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1

21

11

30 15

12 6 16 9 nC

3.1

nC

1.8

3.6

nC

2.4

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q2

Q1

T

rr

Reverse Recovery Time 19

Qrr Reverse Recovery Charge

T

rr

Reverse Recovery Time 20

Qrr Reverse Recovery Charge

VSD Drain-Source Diode Forward

Voltage

I

= 11.5 A,

F

d

= 300 A/µs (Note 3)

iF/dt

I

= 6.3 A,

F

d

= 100 A/µs (Note 3)

iF/dt

VGS = 0 V, IS = 3 A (Note 2) VGS = 0 V, IS = 6 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2)

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

Q2

Q1

Q2 Q2 Q1

0.5

3.0

1.3 ns

12 nC

ns

9 nC

0.7

0.6

1.0

0.8

1.2

nC

A

V

a) 78°C/W when

mounted on a

0.5in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

4

5

b) 125°C/W when

mounted on a

0.02 in2 pad of 2 oz copper

c) 135°C/W when

mounted on a minimum pad.

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3

Typical Characteristics: Q2

FDS6982AS

30

VGS = 10V

20

4.5V

3.0V

3.5V

2.6

2.4

2.2

VGS = 2.5V

2

1.8

10

, DRAIN CURRENT (A)

D

I

0

00.511.52

V

, DRAIN-SOURCE VOLTAGE (V )

DS

2.5V

, NORMALIZED

R

1.6

1.4

DS(ON)

1.2

1

DRAIN-SOURCE ON-RESISTANCE

0.8

3.0V

3.5V

4.0V

4.5V

6.0V

0 102030

, DRAIN CURRENT (A)

I

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = 8.6A

V

= 10V

GS

1.2

1

, NORMALIZED

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50-25 0 255075100125

, JUNCTION TEMPERATURE (oC)

T

J

0.05

0.04

0.03

TA = 125oC

0.02

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

TA = 25oC

0

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

10V

ID = 4.3 A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = 5V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

11.522.533.5

V

TA = 125oC

-55oC

25oC

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

TA = 125oC

25oC

0.1

, REVERSE DRAIN CURRENT (A)

S

I

0.01 0 0.2 0.4 0.6 0.8

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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4

Typical Characteristics: Q2

FDS6982AS

10

2000

ID = 8.6A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

0 5 10 15 20 25

VDS = 10V

, GATE CHARGE (nC)

Q

g

20V

15V

1600

1200

C

iss

800

C

CAPACITANCE (pF)

oss

400

C

rss

0

0 5 10 15 20 25 30

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1s

1

10s

10ms

100µs

1ms

DC

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

0.1

0.01

= 135oC/W

R

θ

JA

= 25oC

T

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

50

SINGLE PULSE

40

R

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

= 135°C/W

JA

θ

= 25°C

T

A

f = 1MHz

V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

R

(t) = r(t) * R

JA

θ

R

= 135°C/W

JA

θ

P(pk)

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

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5

JA

θ

(t)

JA

θ

/ t

1

2

Typical Characteristics Q1

FDS6982AS

20

VGS = 10V

16

12

, DRAIN CURRENT (A)

D

I

6.0V

8

4

4.5V

4.0V

3.5V

3.0V

2.6

VGS = 3.0V

2.2

1.8

3.5V

, NORMALIZED

1.4

DS(ON)

R

1

4.0V

4.5V

6.0V

DRAIN-SOURCE ON-RESISTANCE

0

012

, DRAIN-SOURCE VOLTA GE (V )

V

DS

0.6 0 5 10 15 20

I

, DRAIN CURRENT (A)

D

Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = 6.3A

= 10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.1

0.08

0.06

0.04

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

TA = 25oC

0

246810

V

GS

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

10V

ID = 3.15 A

Figure 14. On-Resistance Variation with

Temperature.

20

VDS = 5V

15

10

, DRAIN CURRENT (A)

D

5

I

0

11.522.533.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

-55oC

25oC

Figure 15. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

V

SD

Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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6

Typical Characteristics Q1

FDS6982AS

10

800

ID = 6.3A

8

VDS = 10V

6

20V

600

C

iss

400

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

036912

, GATE CHARGE (nC)

Q

g

15V

CAPACITANCE (pF)

200

C

rss

0

0 5 10 15 20

C

oss

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

10ms

100ms

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

I

0.01

= 135oC/W

R

JA

θ

T

= 25oC

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

1s

10s

DC

100µs

1ms

50

SINGLE PULSE R

JA

40

θ

T

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

f = 1MHz

= 0 V

V

GS

= 135°C/W

= 25°C

A

Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

R

(t) = r(t) * R

JA

θ

R

= 135°C/W

JA

θ

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

Figure 22. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

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7

2

Typical Characteristics (continued)

SyncFET Schottky Body Diode Characteristics

FDS6982AS

ON Semiconductor’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6982AS.

Current: 1.6A/DIV

Time: 10nS/DIV

Figure 23. FDS6982AS SyncFET body diode reverse recovery characteristic.

For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6982).

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

0.1

0.01

0.001

0.0001

0.00001

, REVERSE LEAKAGE CURRENT (A)

DSS

I

0.000001 0 5 10 15 20 25 30

TA = 125oC

TA = 100oC

TA = 25oC

, REVERSE VOLTAGE (V)

V

DS

Figure 25. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature

Current: 1.6A/DIV

Time: 10nS/DIV

Figure 24. Non-SyncFET (FDS6982) body

diode reverse recovery characteristic.

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Typical Characteristics

FDS6982AS

I

AS

L

DUT

0.01Ω

V

GS

R

GE

0V

V

GS

vary tP to obtain required peak I

DS

tp

AS

Figure 26. Unclamped Inductive Load Test

Circuit

Drain Current

Same type as

+

10V

-

10µF

V

50kΩ

1µF

GS

DUT

I

g(REF

BV

DSS

t

P

+

V

DD

I

AS

V

DS

V

DD

-

t

AV

Figure 27. Unclamped Inductive

Waveforms

+

V

DD

-

Q

G(TOT)

10V

GS

Q

GD

V

GS

Q

Charge, (nC)

Figure 28. Gate Charge Test Circuit Figure 29. Gate Charge Waveform

t

R

L

DUT

V

R

GEN

V

GS

Pulse Width ≤ 1µs Duty Cycle ≤ 0.

V

GS

DS

1%

Figure 30. Switching Time Test

ON

t

d(ON)

V

DS

+

V

DD

0V

90%

10%

t

r

-

V

GS

0V

10%

50%

Pulse Width

Figure 31. Switching Time Waveforms

t

d(OFF

)

90%

t

50%

OFF

t

10%

f

90%

Circuit

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