Fairchild FDS9431A service manual
FDS9431A
P-Channel 2.5V Specified MOSFET
FDS9431A
September 1999
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
Features
• -3.5 A, -20 V. R
R
= 0.130 Ω @ V
DS(ON)
= 0.180 Ω @ V
DS(ON)
= -4.5 V
GS
= -2.5 V.
GS
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
• DC/DC converter
• Fast switching speed.
• High density cell design for extremely low R
• High power and current handling capability.
DS(ON)
.
• Power management
• Load switch
• Battery protection
D
D
5
4
D
D
G
S
SO-8
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
S
S
T
=25oC unless otherwise noted
A
(Note 1a)
- Pulsed -18
(Note 1a)
(Note 1b)
(Note 1c)
6
7
8
-3.5 A
±
2.5
1.2
1.0
3
2
1
8
V
W
°
C
Thermal Characteristics
R
q
JA
R
q
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9431A FDS9431A 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
FDS9431A Rev. A2
FDS9431A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
D
BV
D
T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
D
GS(th)
V
D
T
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
V
= 0 V, ID = -250 mA
GS
= -250 mA,Referenced to 25°C
I
D
-20 V
-28
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current,
VGS = 8 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -8 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
V
= VGS, ID = -250 mA
DS
= -250 mA,Referenced to 25°C
I
D
VGS = -4.5 V, ID = -3.5 A
V
= -2.5 V, ID = -3.0 A
GS
= -4.5 V, ID = -3.5 A
V
GS
=125°C
T
J
-0.4 -0.6 -1 V
2
0.110
0.140
0.155
On-State Drain Current VGS = -4.5 V, VDS =-5 V -10 A
Forward Transconductance VDS = -5 V, ID = -3.5 A 6.5 S
0.130
0.180
0.220
mV/°C
m
A
mV/°C
W
W
W
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 405 pF
Output Capacitance 170 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V,
DS
f = 1.0 MHz
45 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 6.5 13 ns
Turn-On Rise Time 20 35 ns
Turn-Off Delay Time 31 50 ns
Turn-Off Fall Time
Total Gate Charge 6 8.5 nC
Gate-Source Charge 0.8 nC
Gate-Drain Charge
(Note 2)
V
= -5 V, ID = -1 A,
DD
= -4.5 V, R
V
GS
V
= -5 V, ID = -3.5 A,
DS
= -4.5 V
V
GS
GEN
= 6
W
21 35 ns
1.3 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward
VGS = 0 V, IS = -2.1 A
(Note 2)
-0.7 -1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
is determined by the user's board design.
θCA
mounted on a 1 in
pad of 2 oz. copper.
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
c) 125° C/W on a minimum
2
mounting pad.
FDS9431A Rev. A2
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