Fairchild FDS8962C service manual

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FDS8962C Dual N & P-Channel PowerTrench

June 2006

FDS8962C
Dual N & P-Channel PowerTrench

®

MOSFET

Features

Q1: N-Channel

7.0A, 30V R
R

Q2: P-Channel

-5A, -30V R
R

Fast switching speed

High power and handling capability in a widely used surface
mount package

Absolute Maximum Ratings

= 0.030 Ω @ V

DS(on)

= 0.044 Ω @ V

DS(on)

= 0.052 Ω @ V

DS(on)

= 0.080 Ω @ V

DS(on)

D1

SO-8

D1

D2

Pin 1

D2

= 10V

GS

= 4.5V

GS

= -10V

GS

= -4.5V

GS

S1

G2

S2

G1

T

= 25°C unless otherwise noted

A

General Description

These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet maintain
superior switching performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.

Q2

5

6

Q1

7

8

4

3

2

1

Symbol Parameter Q1 Q2 Units

V

DSS

V

GSS

I

D

P

D

T

, T

J

Thermal Characteristics

R

JA

R

JC

Drain-Source Voltage 30 -30 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) 7 -5 A

– Pulsed 20 -20

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

Operating and Storage Junction Temperature Range -55 to +150

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

Thermal Resistance, Junction-to-Case (Note 1) 40

20 V

C/W

C/W

®

MOSFET

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS8962C FDS8962C 13” 12mm 2500 units

©2005 Fairchild Semiconductor Corporation

FDS8962C Rev. A1

1

www.fairchildsemi.com

∆

µ

∆

Ω

Electrical Characteristics

T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

DSS

BV

∆ T

I

DSS

I

GSSF

I

GSSR

On Characteristics (Note 2)

V

GS(th)

GS(th)

V

∆ T

R

DS(on)

I

D(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage V

DSS

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate-Body Leakage, Reverse V

Gate Threshold Voltage V

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain-Source
On-Resistance

On-State Drain Current V

Forward Transconductance V

= 0 V, I

GS

V

= 0 V, I

GS

I

= 250 µ A, Referenced to 25 ° C

D

I

= -250 µA, Referenced to 25 ° C

D

= 24 V, V

DS

V

= -24 V, V

DS

= 20 V, V

GS

= -20 V, V

GS

= V

DS

V

= V

DS

I

= 250 µ A, Referenced to 25 ° C

D

I

= -250 µA, Referenced to 25 ° C

D

V

= 10 V, I

GS

V

= 10 V, I

GS

V

= 4.5 V, I

GS

V

= -10 V, I

GS

V

= -10 V, I

GS

V

= -4.5 V, I

GS

= 10 V, V

GS

V

= -10 V, V

GS

= 5 V, I

DS

V

= -5 V, I

DS

= 250 µ A

D

= -250 µ A

D

= 0 V

GS

= 0 V

GS

= 0 V All 100 nA

DS

= 0 V All -100 nA

DS

, I

= 250 µ A

GS

D

, I

= -250 µA

GS

D

= 7 A

D

= 7 A, T

D

= 6 A

D

= -5 A

D

= -5 A, T

D

D

DS

DS

= 7 A

D

=-5 A

D

= -4 A

= 5 V

= -5 V

= 125 ° C

J

J

Input Capacitance Q1

V

= 15 V, V

DS

Output Capacitance Q1

Reverse Transfer Capacitance Q1

Gate Resistance V

Q2
V

= -15 V, V

DS

= 15 mV, f = 1.0 MHz Q1

GS

= 0 V, f = 1.0 MHz

GS

= 0 V, f = 1.0 MHz

GS

Tu r n-On Delay Time Q1

V

= 15 V, I

DD

Tu r n-On Rise Time Q1

VGS = 10V, R

= 1 A,

D

GEN

= 6 Ω

Q2

Tu r n-Off Delay Time Q1

VDD = -15 V, ID = -1 A,
VGS = -10V, R

GEN

= 6 Ω

Tu r n-Off Fall Time Q1

Total Gate Charge Q1

VDS = 15 V, ID = 7 A, VGS = 10 V

Gate-Source Charge Q1

Q2
VDS = -15 V, ID = -5 A,VGS = -10 V

Gate-Drain Charge Q1

= 125 ° C

Q1
Q2

Q1
Q2

30

-30

25

-23

Q1
Q2

Q1
Q2

Q1
Q2

1

1.9

-1

-1.7

-4.5

4.5

Q1 21

29
26

Q2 42

57
65

Q1
Q2

Q1
Q2

Q1
Q2

20

-20

25
10

575
528

145

Q2

132

65

Q2

70

2.1

Q2

6.0

Q1
Q2

Q2

13

23

Q2

14

Q2

Q1
Q2

10.7

9.6

1.7

Q2

2.2

2.1

Q2

1.7

mV/ ° C

1

-1

3

-3

mV/ ° C

30

m Ω
46
44

52
78
80

pF

pF

pF

8
7

5

16
14

10

ns

ns

24

37

ns

25

3
9

17

26

6

ns

nC

13

nC

nC

FDS8962C Dual N & P-Channel PowerTrench

V

A

V

®

MOSFET

A

S

FDS8962C Rev. A1

2

www.fairchildsemi.com

FDS8962C Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted (Continued)

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

Notes:

1. R

θJA

R

θJC

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Maximum Continuous Drain-Source Diode Forward Current Q1

Q2

Drain-Source Diode Forward
Voltage

Diode Reverse Recovery Time Q1

Diode Reverse Recovery Charge Q1

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R

a) 78°/W when mounted

is determined by the user's board design.

θCA

2

on a 0.5 in
copper

pad of 2 oz

VGS = 0 V, IS = 1.3 A (Note 2)
VGS = 0 V, IS = -1.3 A (Note 2)

IF = 7 A, diF/dt = 100 A/µs
Q2
IF = -5 A, diF/dt = 100 A/µs

b) 125°/W when mounted

on a .02 in
copper

2

pad of 2 oz

Q1
Q2

Q1
Q2

Q2

0.75

-0.88

19
19

1.3

-1.3

1.2

-1.2

9
6

c) 135°/W when mounted

on a minimum pad.

nS

nC

A

V

®

MOSFET

FDS8962C Rev. A1

3 www.fairchildsemi.com