Fairchild FDS8884 service manual
FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ
FDS8884 N-Channel PowerTrench
February 2006
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
E
E
R
F
E
L
MOSFET Maximum Ratings T
I
D
A
M
P
L
E
M
E
N
T
A
T
I
O
N
D
D
D
D
G
S
SO-8
S
S
= 25°C unless otherwise noted
A
Features
Max r
Max r
Low gate charge
100% RG Tested
RoHS Compliant
DS(on)
DS(on)
= 23mΩ at V
= 30mΩ at V
5
6
7
8
= 10V, ID = 8.5A
GS
= 4.5V, ID = 7.5A
GS
4
3
2
1
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current Continuous (Note 1a) 8.5 A
Pulsed 40 A
Single Pulse Avalanche Energy (Note 2) 32 mJ
Power dissipation 2.5 W
o
Derate above 25
C20mW/
Operating and Storage Temperature -55 to 150
®
MOSFET
o
C
o
C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Thermal Resistance, Junction to Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS8884 FDS8884 SO-8 330mm 12mm 2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
o
C/W
o
C/W
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Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆ T
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
o
25
C
V
= 24V 1
DS
= 0V TJ = 125oC250
V
GS
23 mV/
Gate to Source Leakage Current VGS = ±20V ±100 nA
µA
FDS8884 N-Channel PowerTrench
o
C
On Characteristics
V
GS(th)
∆V
∆ T
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
(Note 3)
ID = 250µA, referenced to
o
25
C
= 10V, ID = 8.5A, 19 23
V
GS
V
= 4.5V , ID = 7.5A, 23 30
GS
= 10V, ID = 8.5A,
V
GS
T
= 125oC
J
-4.9 mV/
26 32
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 100 135 pF
Reverse Transfer Capacitance 65 100 pF
Gate Resistance f = 1MHz 0.9 1.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 42 68 ns
Fall Time 21 34 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 1.5 nC
Gate to Drain Charge 2.0 nC
(Note 3)
= 15V, VGS = 0V,
V
DS
f = 1MHz
VDD = 15V, ID = 8.5A
V
= 10V, RGS = 33Ω
GS
V
DS
I
D
V
DS
I
D
= 15V, V
= 8.5A
= 15V, V
= 8.5A
GS
GS
= 10V
= 5V
475 635 pF
510ns
9.2 13 nC
5.0 7 nC
Drain-Source Diode Characteristics
I
= 8.5A 0.9 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
drain pins. R
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge 20 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
is determined by the user’s board design.
θCA
SD
= 2.1A 0.8 1.0 V
I
SD
I
= 8.5A, di/dt = 100A/µs
F
33 ns
mΩ
o
C
®
MOSFET
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, V
3: Pulse Test:Pulse Width <300
FDS8884 Rev. A
µs, Duty Cycle <2%.
GS
= 10V.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when
mounted on a
minimun pad
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