Fairchild FDS8858CZ service manual
FDS8858CZ
G2
S2
G1
S1
D2
D2
D1
D1
D1
D2
S1
G1
S2
G2
D1
D2
1
2
3
4
8
7
6
5
Q1
Q2
Pin 1
SO-8
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
FDS8858CZ Dual N & P-Channel PowerTrench
October 2011
Features
Q1: N-Channel
Max r
Max r
Q2: P-Channel
Max r
Max r
High power and handing capability in a widely used surface
mount package
Fast switching speed
= 17mΩ at VGS = 10V, ID = 8.6A
DS(on)
= 20mΩ at VGS = 4.5V, ID = 7.3A
DS(on)
= 20.5mΩ at VGS = -10V, ID = -7.3A
DS(on)
= 34.5mΩ at VGS = -4.5V, ID = -5.6A
DS(on)
General Description
These dual N and P-Channel enhancement mode power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Applications
Inverter
Synchronous Buck
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Q1 Q2 Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS8858CZ FDS8858CZ SO-8 13” 12mm 2500 units
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
Drain to Source Voltage 30 -30 V
Gate to Source Voltage ±20 ±25 V
Drain Current - Continuous TA = 25°C 8.6 -7.3
- Pulsed 20 -20
Single Pulse Avalanche Energy (Note 3) 50 11 mJ
Power Dissipation for Dual Operation 2.0
T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 40
Thermal Resistance, Junction to Ambient (Note 1a) 78
= 25°C unless otherwise noted
A
= 25°C (Note 1a) 1.6
A
= 25°C (Note 1c) 0.9
A
1
A
WPower Dissipation for Single Operation T
°C/W
www.fairchildsemi.com
FDS8858CZ Dual N & P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
= 250μA, VGS = 0V
I
D
= -250μA, VGS = 0V
I
D
ID = 250μA, referenced to 25°C
I
= -250μA, referenced to 25°CQ1Q2
D
V
= 24V, V
DS
= -24V, V
V
DS
= ±20V, V
V
GS
= ±25V, V
V
GS
GS
GS
DS
DS
= 0V
= 0V
= 0V
= 0V
V
= VDS, ID = 250μA
GS
= VDS, ID = -250μA
V
GS
ID = 250μA, referenced to 25°C
= -250μA, referenced to 25°C
I
D
V
= 10V, ID = 8.6A
GS
V
= 4.5V, ID = 7.3A
GS
= 10V, ID = 8.6A, TJ = 125°C
V
GS
= -10V, ID = -7.3A
V
GS
= -4.5V, ID = -5.6A
V
GS
= -10V, ID = -7.3A, TJ = 125°C
V
GS
= 5V, ID = 8.6A
V
DS
V
= -5V, ID = -7.3A
DS
Q1Q230
-30
Q1
Q2
Q1
Q2
Q1Q21
Q1
Q2
Q1
Q2
Q1
Q2
V
22
-22
mV/°C
1
-1
±10
±10
1.6
-1
-2.1
-5.4
6.0
12.4
15.2
17.7
17.1
26.5
24.0
3
-3
mV/°C
17.0
20.0
24.3
20.5
34.5
28.8
27
21
μA
μA
V
mΩ
S
®
MOSFET
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Q1
= 15V, VGS = 0V, f = 1MHZ
V
DS
Q2
= -15V, VGS = 0V, f = 1MHZ
V
DS
Q1
V
= 15V, ID = 8.6A,
DD
V
GS
= 10V, R
GEN
= 6Ω
Q2
= -15V, ID = -7.3A,
V
DD
V
GS
= -10V, R
GEN
= 6Ω
Q1
= 10V, VDD = 15V, ID = 8.6A
V
GS
Q2
V
= -10V, VDD = -15V, ID = -7.3A
GS
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
905
180
290
110
260
1.3
4.4
7
9
3
10
19
33
3
16
17
33
2.7
6.1
3.4
8.5
1205
2230
240
390
165
390
14
18
10
20
35
53
10
29
24
46
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
1675
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
2
www.fairchildsemi.com
FDS8858CZ Dual N & P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
0.8
0.9
25
28
19
22
1.2
-1.2
38
42
29
33
V
= 0V, IS = 8.6A (Note 2)
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-t o- case a nd case -to-ambient thermal resistance wher e t he case thermal reference is defined a s the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
θJC
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
is determined by the user’s board design.
θCA
a) 78°C/W when
mounted on a 0.5 in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
GS
V
= 0V, IS = -7.3A (Note 2)Q1Q2
GS
Q1
I
= 8.6A, di/dt = 100A/s
F
Q2
I
= -7.3A, di/dt = 100A/s
F
2
b) 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
Q1
Q2
Q1
Q2
2
c) 135°C/W when
mounted on a
minimun pad
V
ns
nC
®
MOSFET
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 1mH, IAS = 10A, VDD = 27V, VGS = 10V; P-ch: L = 1mH, IAS = -4.7A, VDD = -27V, VGS = -10V.
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
3
www.fairchildsemi.com
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