Fairchild FDS8813NZ service manual
FDS8813NZ
N-Channel PowerTrench® MOSFET
30V, 18.5A, 4.5mΩ
Features
Max r
Max r
HBM ESD protection level of 5.6KV typical (note 3)
High performance trench technology for extremely low r
High power and current handling capability
RoHS compliant
= 4.5mΩ at V
DS(on)
= 6.0mΩ at V
DS(on)
= 10V, ID = 18.5A
GS
= 4.5V, ID =16A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
November 2008
®
process that has
FDS8813NZ N-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 18.5
-Pulsed 74
Single Pulse Avalanche Energy (Note 4) 337 mJ
Power Dissipation (Note 1a) 2.5
Power Dissipation (Note 1b) 1.0
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25°C unless otherwise noted
D
D
D
D
G
S
S
S
Thermal Characteristics
R
θJC
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Thermal Resistance, Junction to Ambient (Note 1b) 125
Package Marking and Ordering Information
A
W
°C/WR
Device Marking Device Reel Size Tape Width Quantity
FDS8813NZ FDS8813NZ 13” 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C1
1
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 20 mV/°C
= 0V 1 µA
GS
= 0V ±10 µA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.8 3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 18.5A 74 S
ID = 250µA, referenced to 25°C -6 mV/°C
VGS = 10V, ID = 18.5A 3.8 4.5
VGS = 4.5V, ID = 16A 4.7 6.0
VGS = 10V, ID = 18.5A,
T
= 125°C
J
5.1 6.6
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 580 775 pF
Reverse Transfer Capacitance 345 520 pF
VDS = 15V, VGS = 0V,
f = 1MHz
3115 4145 pF
Gate Resistance f = 1MHz 1.8 Ω
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 8 16 ns
Turn-Off Delay Time 39 63 ns
VDD = 15V, ID = 18.5A
VGS = 10V, R
GEN
= 6Ω
13 24 ns
Fall Time 7 14 ns
Total Gate Charge VGS = 0V to 10V
Total Gate Charge VGS = 0V to 5V 28 40 nC
VDD = 15V
ID = 18.5A
55 76 nC
Gate to Source Gate Charge 9 nC
Gate to Drain “Miller” Charge 10 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes
1. R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
is guaranteed by design while R
R
θJC
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 30V, VGS = 10V.
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 27 41 nC
is determined by the user’s board design.
θJA
a) 50°C/W when mounted on a
2
pad of 2 oz copper
1in
= 0V, IS = 2.1A (Note 2) 0.7 1.2 V
GS
IF = 18.5A, di/dt = 100A/µs
32 47 ns
b) 125°C/W when mounted on a
minimum pad .
FDS8813NZ Rev.C1
2
www.fairchildsemi.com
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