Fairchild FDS8638 service manual

FDS8638

N-Channel PowerTrench® MOSFET

40 V, 18 A, 4.3 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r
 100% UIL Tested
 RoHS Compliant

= 4.3 mΩ at V

DS(on)

= 5.4 mΩ at V

DS(on)

= 10 V, ID = 18 A

GS

= 4.5 V, ID = 16 A

GS

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Applications

 Synchronous Rectifier
 Load Switch

March 2009

®

process that has

FDS8638 N-Channel PowerTrench

®

MOSFET

D

D

D

D

SO-8

Pin 1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 541 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

S

= 25 °C unless otherwise noted

A

G

S

S

= 25 °C (Note 1b) 1

A

5

D

6

D

7

D

8

D

G

4

S

3

S

2

1

S

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDS8638 FDS8638 SO-8 13 “ 12 mm 2500 units

©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C

1

www.fairchildsemi.com

FDS8638 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 µA, referenced to 25 °C 32 mV/°C

D

= 0 V 1 µA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 µA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 18 A 3.3 4.3

GS

= 4.5 V, ID = 16 A 4.0 5.4

GS

= 10 V, ID = 18 A, TJ = 125 °C 4.8 6.3

V

GS

Forward Transconductance VDS = 5 V, ID = 18 A 88 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1175 1560 pF
Reverse Transfer Capacitance 120 180 pF
Gate Resistance 0.9 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 613ns
Turn-Off Delay Time 39 63 ns
Fall Time 510ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 12 nC
Gate to Drain “Miller” Charge 7.2 nC

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

VDD = 20 V, ID = 18 A,
V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V 27 39 nC

GS

GEN

= 6 Ω

VDD = 20 V,
I

= 18 A

D

4270 5680 pF

16 30 ns

61 86 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 ma terial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting T

©2009 Fairchild Semiconductor Corporation
FDS8638 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 30 49 nC

= 25 °C, L = 3 mH, IAS = 19 A, VDD = 40 V, VGS = 10 V.

J

a) 50 °C/W when moun ted on a

2

1 in

pad of 2 oz copper.

V

= 0 V, IS = 18 A (Note 2) 0.81 1.3

GS

= 0 V, IS = 2.1 A (Note 2) 0.71 1.2

V

GS

= 18 A, di/dt = 100 A/µs

I

F

2

θJC

51 82 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a
minimum pad.

V

is determined by

θCA

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