Fairchild FDS86242 service manual
FDS86242
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 67 mΩ at V
DS(on)
= 98 mΩ at V
DS(on)
= 10 V, ID = 4.1 A
GS
= 6 V, ID = 3.3 A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDS86242 N-Channel PowerTrench
August 2010
®
process that has
, switching performance and
.
DS(on)
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86242 FDS86242 SO-8 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 4.1
-Pulsed 20
Single Pulse Avalanche Energy (Note 3) 40 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
www.fairchildsemi.com
FDS86242 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperatur
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 104 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA23.54V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -10 mV/°C
D
V
= 10 V, ID = 4.1 A 56.3 67
GS
= 6 V, ID = 3.3 A 73.8 98
GS
= 10 V, ID = 4.1 A, TJ = 125 °C 107 126
V
GS
Forward Transconductance VDS = 10 V, ID = 4.1 A 11 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 64 85 pF
Reverse Transfer Capacitance 2.9 5 pF
Gate Resistance 0.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 1.5 10 ns
Turn-Off Delay Time 13 23 ns
Fall Time 2.8 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 3.0 nC
Gate to Drain “Miller” Charge 2.0 nC
= 75 V, VGS = 0 V,
V
DS
f = 1MHz
= 75 V, ID = 4.1 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V 4.9 7 nC
GS
GEN
= 6 Ω
V
DD
I
= 4.1 A
D
= 75 V,
570 760 pF
7.9 16 ns
8.9 13 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1. 5 x 1.5 in. boar d of FR -4 mater ial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 71 114 nC
a) 50 °C/W when moun ted on a
1 in
= 25 °C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V.
J
2
pad of 2 oz copper.
V
= 0 V, IS = 4.1 A (Note 2) 0.81 1.3
GS
= 0 V, IS = 2 A (Note 2) 0.77 1.2
V
GS
= 4.1 A, di/dt = 100 A/μs
I
F
2
θJC
61 98 ns
is guaranteed by design while R
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
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