Fairchild FDS86240 service manual
FDS86240
N-Channel PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 19.8 mΩ at V
DS(on)
= 26 mΩ at V
DS(on)
= 10 V, ID = 7.5 A
GS
= 6 V, ID = 6.4 A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
FDS86240 N-Channel PowerTrench
June 2010
®
process that has
, switching performance and
DS(on)
.
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 7.5
-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25 °C unless otherwise noted
= 25 °C (Note 1a) 2.5
A
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS86240 FDS86240 SO-8 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS86240 Rev.C
1
www.fairchildsemi.com
FDS86240 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 105 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.74V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 7.5 A 17.3 19.8
GS
= 6 V, ID = 6.4 A 19.7 26
GS
= 10 V, ID = 7.5 A, TJ = 125 °C 30.8 35.3
V
GS
Forward Transconductance VDS = 10 V, ID = 7.5 A 26 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 198 265 pF
Reverse Transfer Capacitance 8.3 15 pF
= 75 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.84 Ω
1930 2570 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 4.2 10 ns
Turn-Off Delay Time 24 39 ns
= 75 V, ID = 7.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
14 26 ns
Fall Time 4.9 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 7.6 nC
= 0 V to 10 V
GS
= 0 V to 5 V 16 22 nC
GS
V
DD
I
= 7.5 A
D
= 75 V,
28 40 nC
Gate to Drain “Miller” Charge 5.3 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
is determined with the device m ounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 i n. board o f FR-4 mat erial. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
FDS86240 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 109 175 nC
= 25 °C, L = 1 mH, IAS = 21 A, VDD = 135 V, VGS = 10 V.
J
V
V
I
a) 50 °C/W when m ounted on a
2
pad of 2 oz copper.
1 in
= 0 V, IS = 7.5 A (Note 2) 0.77 1.3
GS
= 0 V, IS = 2 A (Note 2) 0.70 1.2
GS
= 7.5 A, di/dt = 100 A/μs
F
2
θJC
75 120 ns
is guaranteed by design while R
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
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