Fairchild FDS86141 service manual

FDS86141

SO-8

D

D

D

D

S

S

S

G

Pin 1

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

N-Channel PowerTrench® MOSFET

100 V, 7 A, 23 m

Features

 Maximum R
 Maximum R

High-Performance Trench Technology; Extremely Low R



 100% UIL Tested
 RoHS Compliant

= 23 m at VGS = 10 V, ID = 7 A

DS(on)

= 36 m at VGS = 6 V, ID = 5.5 A

DS(on)

DS(on)

General Description

This N-channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
maintain superior switching performance.

Applications

 DC-DC Conversion

August 2011

®

process that has

FDS86141 — N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

JC

R

JA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS86141 FDS86141 SO-8 13 ’’ 12 mm 2500 units

© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 7

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 121 mJ
Power Dissipation TA = 25 °C (Note 1a) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 2.5
Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 2.5

A

1

A

W

°C/W

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FDS86141 — N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted.

J

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

BV
T

I

DSS

I

GSS

DSS

DSS
J

Drain-to-Source Breakdown Voltage ID = 250 A, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate-to-Source Leakage Current VGS = ±20 V, V

I

= 250 A, referenced to 25°C 67 mV/°C

D

= 0 V 1 A

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

V
T

r

DS(on)

g

FS

GS(th)

J

Gate-to-Source Threshold Voltage VGS = VDS, ID = 250 A23.14V
Gate-to-Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 A, Referenced to 25°C -10 mV/°C

D

V

= 10 V, ID = 7 A 19 23

GS

= 6 V, ID = 5.5 A 27 37

GS

= 10 V, ID = 7 A, TJ = 125°C 33 40

V

GS

Forward Transconductance VDS = 10 V, ID = 7 A 19 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 186 247 pF
Reverse Transfer Capacitance 8.6 13 pF
Gate Resistance 0.5 

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 3.2 10 ns
Turn-Off Delay Time 14.3 26 ns
Fall Time 3.2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 3.4 nC
Gate to Drain “Miller” Charge 3.1 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 5 V 6.7 9.4 nC

GS

GEN

= 6 

V

DD

I

= 7 A

D

= 50 V

703 934 pF

8.3 17 ns

11.8 16.5 nC

mV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

JA

the user's board design.

2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 %.

3. Starting T

© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4

Source-to-Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 39 62 nC

= 25 oC; N-ch: L = 3 mH, IAS = 9 A, VDD = 100 V, VGS = 10 V.

J

a) 50 °C/W whe n mounted on a

2

1 in

pad of 2 oz copper.

V

= 0 V, IS = 7 A (Note 2) 0.8 1.3

GS

= 0 V, IS = 2 A (Note 2) 0.8 1.2

V

GS

= 7 A, di/dt = 100 A/s

I

F

2

JC

43 69 ns

is guaranteed by design while R

b) 125 °C/W when mounted on a
minimum pad.

V

is determined by

CA

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FDS86141 — N-Channel PowerTrench

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

30

VGS = 7 V

VGS = 5.5 V

VGS = 10 V

PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0

1

2

3

4

VGS = 5 V

PULSE DURA TION = 80s
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 7 V

VGS = 5.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

0

20

40

60

80

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE V O L TAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(m)

PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

2468

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

30

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1 . O n - R e g i o n Characteristics Figure 2. Normalized O n - R e s i s t a n c e

= 25 °C unless otherwise noted.

J

vs. Drain Current and Gate Voltage

®

MOSFET

Figu r e 3 . Norma l i z ed On- R e s i stance

vs. Junction Temperature

© 2007 Fairchild Semiconductor Corporation
FDS86141 • Rev. C4

Figure 5. Transfer Characteristics Figure 6. Source-to-Drain Diode Forward Voltage

Figure 4. On-Resistance vs. Gate-to-Source Voltage

vs. Source Current

3

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