Fairchild FDS8449 service manual

December 2005

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FDS8449

40V N-Channel PowerTrench® MOSFET

General Description

These N-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.

Application

• Inverter

• Power Supplies

D

SO-8

D

D

Pin 1

D

D

D

D

SO-8

D

G

G

S

S

S

S

S

S

Features

• 7.6 A, 40V R
R

• High power handling capability in a widely used
surface mount package

• RoHS compliant

5
6
7
8

= 29mΩ @ VGS = 10V

DS(on)

= 36mΩ @ VGS = 4.5V

DS(on)

4
3
2
1

V N-

h
nn

l P
w

rTr
n

h

®

M
FET

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 40 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 7.6 A
– Pulsed 50
PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.5

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

±20

1

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 50
(Note 1b) 125

(Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

©2005 Fairchild Semiconductor Corporation
FDS8449 Rev B(W)

FDS8449 FDS8449 13’’ 12mm 2500 units

www.fairchildsemi.com

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Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 3)

EAS Drain-Source Avalanche Energy
IAS Drain-Source Avalanche Current 7.3 A

V

= 40 V, ID = 7.3 A, L = 1 mH 27 mJ

DD

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

ΔBVDSS
ΔT

J

I

Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature
Coefficient

= 0 V, ID = 250 μA

V

GS

= 250 μA, Referenced to 25°C

I

D

= ±20 V, VDS = 0 V

V

GS

40 V

34

±100

mV/°C

μA
nA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

ΔVGS(th)
ΔTJ

R

DS(on)

gFS Forward Transconductance VDS = 10 V, ID = 7.6 A 21 S

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = 250 μA

V

DS

= 250 μA, Referenced to 25°C

I

D

VGS = 10 V, ID = 7.6 A

= 4.5 V, ID = 6.8 A

V

GS

V

= 10 V, ID = 7.6 A, TJ=125°C

GS

1 1.9 3 V

–5

21
26
29

29
36
43

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 760 pF

iss

C

Output Capacitance 100 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance f = 1.0 MHz 1.2

V

= 20 V, V

DS

f = 1.0 MHz

= 0 V,

GS

60 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 9 18 ns

d(on)

tr Turn–On Rise Time 5 10 ns
t

Turn–Off Delay Time 23 17 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 7.7 11 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge

= 20 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

V

= 20 V, ID = 7.6 A,

DS

V

= 5 V

GS

GEN

= 6 Ω

3 6 ns

2.8 nC

Drain–Source Diode Characteristics

VSD
trr Diode Reverse Recovery Time 17 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. R

θJA

the drain pins. R

Drain–Source Diode Forward
Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = 2.1 A (Note 2) 0.76 1.2 V

= 7.6 A, diF/dt = 100 A/µs

I

F

is determined by the user's board design.

7 nC

44
4
V N-

h
nn

l P
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rTr
n

h

®

M
FET

a) 50°C/W when mounted

on a 1in2 pad of 2 oz
copper

2 Test: Pulse Width < 300μs, Duty Cycle < 2.0%

3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.

FDS8449 Rev A(W) www.fairchildsemi.com

b) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper