Fairchild FDS8433A service manual
FDS8433A
Single P-Channel 2.5V Specified MOSFET
FDS8433A
September 2000
General Description
This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Battery protection
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
• -5 A, -20 V. R
R
= 0.047 Ω @ V
DS(on)
= 0.070 Ω @ V
DS(on)
= -4.5 V
GS
= -2.5 V
GS
• Fast switching speed.
• High density cell design for extremely low R
• High power and current handling capability.
5
6
7
8
4
3
2
1
DS(on)
.
Symbol Parameter FDS8433A Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -50
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
8V
±
-5 A
2.5 W
1.2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junc t ion-to-A mbient
Thermal Resistance, Junc ti on-to-Cas e
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS8433A FDS8433A 13’’ 12mm 2500 units
2000 Fairchild Semiconductor International
C
°
C/W
°
C/W
°
FDS8433A Rev. C
FDS8433A
yp
DMOS Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
DSS
BV
∆
T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
GS(th)
V
DS(on)
FS
T
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
On-State Drain Current VGS = -4.5 V, VDS = -5 V -25 A
Forward Transconductance VDS = -5 V, ID = -5 A 16 S
(Note 2)
= 0 V, ID = -250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= VGS, ID = -250 µA
DS
I
= -250 µA, Referenced to 25°C
D
VGS = -4.5 V, ID = -5 A
= -4.5 V, ID = -5 A, TJ=125°C
V
GS
V
= -2.5 V, ID = -4.3 A
GS
-20 V
-0.4 -0.6 -1 V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1130 pF
Output Capacitance 480 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
-25
4
0.036
0.050
0.047
120 pF
mV/°C
mV/°C
0.047
0.085
0.070
µ
A
Ω
Ω
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 8 16 ns
Turn-On Rise Time 23 37 ns
Turn-Off Delay Time 260 360 ns
Turn-Off Fall Time
Total Gate Charge 20 28 nC
Gate-Source Charge 2.8 nC
Gate-Drain Charge
= -10 V, ID = -1 A,
V
DD
= -4.5 V, R
V
GS
V
= -5 V, ID = -5 A,
DS
V
= -5 V,
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse W idth ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
is determined by the user's board design.
θCA
mounted on a 1 in
pad of 2 oz. copper.
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
(Note 2)
2
90 125 ns
3.2 nC
-0.8 -1.2 V
c) 125° C/W on a minimum
mounting pad of 2 oz. copper.
FDS8433A Rev. C
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