FDS89141
Q2Q1Q2
Q1
G2
S1
G1
S2
D2
D2
D1
D1
5
6
7
8
3
2
1
4
Pin 1
SO-8
D1
D1
D2
D2
S2
S1
G1
G2
Dual N-Channel PowerTrench® MOSFET
100 V, 3.5 A, 62 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 62 mΩ at V
DS(on)
= 100 mΩ at V
DS(on)
= 10 V, ID = 3.5 A
GS
= 6 V, ID = 2.8 A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness
Applications
Synchronous Rectifier
Primary Switch For Bridge Topology
FDS89141 Dual N-Channel PowerTrench
December 2010
®
process that has
r
, switching performance and
DS(on)
.
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 3.5
-Pulsed 18
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation TA = 25 °C (Note 1a) 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 1.6
A
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDS89141 Rev.C
FDS89141 FDS89141 SO-8 13 ’’ 12 mm 2500 units
Thermal Resistance, Junction to Case (Note 1) 4.0
Thermal Resistance, Junction to Ambient (Note 1a) 78
A
W
°C/W
FDS89141 Dual N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 69 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA23.14V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -9 mV/°C
D
V
= 10 V, ID = 3.5 A 47 62
GS
= 6 V, ID = 2.8 A 63 100
GS
= 10 V, ID = 3.5 A, TJ = 125 °C 81 107
V
GS
Forward Transconductance VDS = 10 V, ID = 3.5 A 14.7 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 70 93 pF
Reverse Transfer Capacitance 4.7 7 pF
= 50 V, VGS = 0 V,
V
DS
f = 1MHz
Gate Resistance 1.0 Ω
299 398 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 1.4 10 ns
Turn-Off Delay Time 9.8 20 ns
= 50 V, ID = 3.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 2.2 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 1.4 nC
= 0 V to 10 V
GS
= 0 V to 5 V 2.9 4.1 nC
GS
V
DD
I
= 3.5 A
D
= 50 V,
Gate to Drain “Miller” Charge 1.3 nC
510ns
5.1 7.1 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 3.5 A (Note 2) 0.8 1.3
V
SD
t
rr
Q
rr
NOTES:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting T
©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDS89141 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 23 37 nC
a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper
= 25°C, L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10V.
J
GS
= 0 V, IS = 2 A (Note 2) 0.8 1.2
V
GS
= 3.5 A, di/dt = 100 A/μs
I
F
2
θJC
33 53 ns
is guaranteed by design while R
b) 135°C/W when
mounted on a
minimun pad
is determined by
θCA
V
FDS89141 Dual N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
3
6
9
12
15
18
VGS = 5 V
VGS = 7 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 5.5 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0369121518
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 5.5 V
VGS = 6 V
VGS = 7 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 3.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESIST ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
45678910
0
100
200
300
400
TJ = 125 oC
ID = 3.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA GE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2345678
0
3
6
9
12
15
18
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURC E V OLTAGE (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
20
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics ( N-Channel) T
Figure 1.
On-Region Characteristics Figure 2.
= 25°C unless otherwise noted
J
vs Drain Current and Gate Voltage
Normali z e d O n - R esistance
®
MOSFET
Fig u r e 3. Norm a l ized On - R esista n c e
vs Junction Temperature
©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDS89141 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Res istance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
FDS89141 Dual N-Channel PowerTrench
0123456
0
2
4
6
8
10
ID = 3.5 A
VDD = 50 V
V
DD
= 25 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
0.1 1 10 100
1
10
100
400
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 4
1
2
3
4
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
1
2
3
4
Package Limited
V
GS
= 6 V
R
θJA
= 78 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
A
, Ambient TEMPERATURE (
o
C)
0.1 1 10 100 400
0.005
0.01
0.1
1
10
20
10 s
100 us
10 ms
DC
1 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 135
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
11010210
3
0.5
1
10
100
600
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics ( N-Channel) T
Figure 7.
Gate Charge Characteristics Figure 8.
= 25°C unless otherwise noted
J
Capacitance vs Drain
to Source Voltage
®
MOSFET
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FDS89141 Rev. C
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma xim um C ont inu ous Dra in
Current vs Ambient Temperature
Figure 12.
Si ngle P ulse M aximum
Power Dissipation
FDS89141 Dual N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
R
θJA
= 135 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PU L SE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics ( N-Channel) T
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
= 25°C unless otherwise noted
J
®
MOSFET
©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FDS89141 Rev. C
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tm
®
tm
tm
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FDS89141 Dual N-Channel PowerTrench
®
MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51
©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FDS89141 Rev. C
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