Fairchild FDS6990AS service manual
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FDS6990AS Dual 30V N-Channel PowerTrench
M
March 2010
FDS6990AS
Dual 30V N - Channel PowerTrench
®
SyncFET™
Features
7.5 A, 30 V. R
Includes SyncFET Schottky diode
Low gate charge (10nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
DS(ON)
R
DS(ON)
= 22 m Ω @ V
= 28 m Ω @ V
= 10 V
GS
= 4.5 V
GS
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R
Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
and low gate charge.
DS(ON)
Applications
DC/DC converter
Motor drives
D1
D1
D2
D2
SO-8
Pin 1
Absolute Maximum Ratings
G1
S1
G2
S2
TA=25°C unless otherwise noted
Q1
Q2
8
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Thermal Characteristics
R
θ
JA
R
θ
JC
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 20
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
Operating and Storage Junction Temperature Range –55 to +150
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40
45
36
27
1
±
20 V
°
C/W
°
C/W
®
SyncFET™
°
C
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6990AS FDS6990AS 13" 12mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS6990AS Rev. A2
1
www.fairchildsemi.com
∆
µ
±
∆
Ω
FDS6990AS Dual 30V N-Channel PowerTrench
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
∆ T
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
GS(th)
V
∆ T
R
DS(on)
I
D(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Drain–Source Breakdown Voltage V
DSS
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current V
Gate–Body Leakage V
Gate Threshold Voltage V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
On–State Drain Current V
Forward Transconductance V
Input Capacitance V
Output Capacitance 162 pF
= 0 V, I
GS
I
= 1 mA, Referenced to 25 ° C31mV/ ° C
D
= 24 V, V
DS
= ± 20 V, V
GS
= V
DS
I
= 1 mA, Referenced to 25 ° C–3mV/ ° C
D
V
= 10 V, I
GS
V
= 10 V, I
GS
V
GS
= 10 V, V
GS
= 15 V, I
DS
= 15 V, V
DS
= 1 mA 30 V
D
= 0 V 500
GS
= 0 V
DS
, I
= 1 mA 1 1.7 3 V
GS
D
= 4.5 V, I
= 7.5 A
D
= 7.5 A, T
D
= 6.5 A
D
= 5 V 20 A
DS
= 10 A 29 S
D
= 0 V,
GS
= 125 ° C
J
17
26
21
550 pF
100 nA
22
35
28
f = 1.0 MHz
Reverse Transfer Capacitance 60 pF
Gate Resistance V
Tu r n–On Delay Time V
Tu r n–On Rise Time 510ns
= 15 mV, f = 1.0 MHz 3.1
GS
DS
V
GS
= 15 V, I
= 10 V, R
= 1 A,
D
GEN
= 6 Ω
816ns
Tu r n–Off Delay Time 24 38 ns
Tu r n–Off Fall Time 4 8ns
Tu r n–On Delay Time V
Tu r n–On Rise Time 816ns
DS
V
GS
= 15 V, I
= 4.5 V, R
= 1 A,
D
GEN
= 6 Ω
918ns
Tu r n–Off Delay Time 14 24 ns
Tu r n–Off Fall Time 510ns
Total Gate Charge at Vgs = 10V V
= 15 V, I
DD
= 10 A, V
D
= 5 V 10 14 nC
GS
Total Gate Charge at Vgs = 5V 6 8 nC
Gate–Source Charge 1.5 nC
Gate–Drain Charge 2.0 nC
Maximum Continuous Drain–Source Diode Forward Current 2.9 A
Drain–Source Diode Forward
V
GS
= 0 V, I
= 2.3 A (Note 2) 0.6 0.7 V
S
Voltage
Diode Reverse Recovery Time I
Diode Reverse Recovery Charge d
= 10A, 18 nS
F
/d
= 300 A/µs (Note 3) 11 nC
iF
t
m Ω
A
®
SyncFET™
FDS6990AS Rev. A2
2
www.fairchildsemi.com
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
JA
R
is guaranteed by design while R
JC
a) 78°C/W when mounted
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4
is determined by the user's board design.
θCA
2
on a 0.5 in
copper
pad of 2 oz
b) 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
2
c) 135°C/W when
mounted on a
minimum pad.
θ
θ
FDS6990AS Dual 30V N-Channel PowerTrench
®
SyncFET™
FDS6990AS Rev. A2
3
www.fairchildsemi.com
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