Fairchild FDS6911 service manual
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December 2011
11 D
FDS6911
Dual N-Channel Logic Level PowerTrench® MOSFET
20V, 7.5A, 13mΩ
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D2
D
D2
D
D1
D
D1
D
SO-8
Pin 1
SO-8
S1
G2
S2
G
G1
S
S
S
Features
r
Fast switching speed
Low gate charge
High performance trench technology for extremely
High power and current handling capability
= 13 mΩ @ VGS = 10 V
DS(on)
r
= 17 mΩ @ V
DS(on)
DS(ON)
low R
= 4.5 V
GS
S1
1
G1
2
S2
3
G2
4
l Nh
nn
l L
i
l
v
l P
w
rTr
8
Q1
Q2
D1
D1
7
D2
6
D2
5
n
h
®
M
FET
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 7.5 A
– Pulsed 20
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
± 20
1.0
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6911 FDS6911 13’’ 12mm 2500 units
©2011 Fairchild Semiconductor Corporation
FDS6911 Rev C1
www.fairchildsemi.com
g
FDS6911 Dual N-Channel Lo
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
J
I
Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V
DSS
I
Gate–Source Leakage
GSS
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 μA
V
GS
I
= 250 μA, Referenced to 25°C
D
= 20 V, VGS = 0 V, TJ = 55°C
V
DS
= ±20 V, VDS = 0 V
V
GS
20 V
28
1
10
±100
mV/°C
μA
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
r
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
= VGS, ID = 250 μA
V
DS
I
= 250 μA, Referenced to 25°C
D
VGS = 10 V, ID = 7.5 A
= 4.5 V, ID = 6.5 A
V
GS
= 10 V, ID = 7.5 A,TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 36 S
1 1.8 3 V
–4.7
10.6
13
14.5
13
17
20
mV/°C
mΩ
ic level PowerTrench
Dynamic Characteristics
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance
= 15 V, V
V
DS
= 0 V,
GS
f = 1.0 MHz
= 15 mV, f = 1.0 MHz
V
GS
1130 pF
300 pF
100 pF
2.4
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time
d(on)
tr Turn–On Rise Time
t
Turn–Off Delay Time
d(off)
= 15 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
tf Turn–Off Fall Time
Q
Total Gate Charge at Vgs=10V 17 24 nC
g(TOT)
Qg Total Gate Charge at Vgs=5V 9 13 nC
Qgs Gate–Source Charge 3.1 nC
V
= 15 V, ID = 7.5 A,
DD
Qgd Gate–Drain Charge
9 18 ns
5 10 ns
26 42 ns
7 14 ns
2.7 nC
®
MOSFET
FDS6911 Rev C1 www.fairchildsemi.com
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