Fairchild FDS6692A service manual
FDS6692A
N-Channel PowerTrench
30V, 9A, 11.5mΩ
®
MOSFET
FDS6692A N-Channel PowerTrench
January 2010
Features
R
R
High performance trench technology for extremely low
Low gate charge
High power and current handling capability
RoHS Compliant
DS(ON)
DS(ON)
R
DS(ON)
= 11.5mΩ, V
= 14.5mΩ, V
= 10V, ID = 9A
GS
= 4.5V, ID = 8.2A
GS
Applications
DC/DC converters
D
D
D
D
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
R
and fast switching speed.
DS(ON)
5
6
4
3
®
MOSFET
SO-8
©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A
2
G
S
S
S
7
8
2
1
www.fairchildsemi.com1
FDS6692A N-Channel PowerTrench
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GS
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
I
D
Continuous (T
Continuous (T
= 25oC, VGS = 10V, R
A
= 25oC, VGS = 4.5V, R
A
= 85oC/W)
θJA
= 85oC/W) 8.2 A
θJA
9A
Pulsed 48 A
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 1) 79 mJ
Power dissipation 1.47 W
Operating and Storage Temperature -55 to 150
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS6692A FDS6692A SO-8 330mm 12mm 2500 units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
J
o
C/W
o
C/W
o
C
®
MOSFET
Off Characteristics
B
∆B
∆T
I
DSS
I
GSS
VDSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
On Characteristics
V
GS(TH)
∆V
∆T
R
DS(ON)
GS(TH)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 330 440 pF
Reverse Transfer Capacitance - 138 210 pF
Gate Resistance f = 1MHz - 2.0 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC
Threshold Gate Charge VGS = 0V to 1V - 0.93 1.2 nC
Gate to Source Gate Charge - 3 - nC
Gate Charge Threshold to Plateau - 2.1 - nC
Gate to Drain “Miller” Charge - 4.8 - nC
I
= 250µA,
D
Referenced to 25
V
= 24V - - 1
DS
= 0V TJ = 150oC - - 250
V
GS
ID = 250µA,
Referenced to 25
= 9A, VGS = 10V - 8.2 11.5
I
D
I
= 8.2A, VGS = 4.5V - 11 14.5
D
= 9A, VGS = 10V,
I
D
= 150oC
T
J
= 15V, VGS = 0V,
V
DS
f = 1MHz
o
C
o
C
-21-mV/
--5-mV/
-1319
- 1210 1610 pF
-2229nC
= 15V
V
DD
I
= 9A
D
= 1.0mA
I
g
µA
mΩ
o
C
o
C
FDS6692A Rev. A2
www.fairchildsemi.com2
Switching Characteristics (V
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time - 8 - ns
Rise Time - 32 - ns
Turn-Off Delay Time - 33 - ns
Fall Time - 13 - ns
Turn-Off Time - - 69 ns
GS
= 10V)
= 15V, ID = 9A
V
DD
= 10V, RGS = 6.2Ω
V
GS
- - 60 ns
Drain-Source Diode Characteristics
I
= 9A - - 1.25 V
V
SD
t
rr
Q
RR
Notes:
1: Starting T
2: R
θJA
mounting surface of the drain pins. R
3: R
θJA
Source to Drain Diode Voltage
Reverse Recovery Time ISD = 9A, dISD/dt=100A/µs- -27ns
Reverse Recovered Charge ISD = 9A, dISD/dt=100A/µs- -17nC
= 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V.
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
is measured with 1.0 in2 copper on FR-4 board
is guaranteed by design while R
θJC
SD
= 2.1A - - 1.0 V
I
SD
is determined by the user’s board design.
θJA
FDS6692A N-Channel PowerTrench
®
MOSFET
FDS6692A Rev. A2
www.fairchildsemi.com3
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