Fairchild FDS6681Z service manual
June 2005
FDS6681Z
30 Volt P-Channel PowerTrench® MOSFET
FDS6681Z
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
®
process that
Features
• –20 A, –30 V. R
R
• Extended V
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
range (–25V) for battery applications
GSS
= 4.6 mΩ @ VGS = –10 V
DS(ON)
= 6.5 mΩ @ VGS = –4.5 V
DS(ON)
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
45
36
27
18
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage ±25 V
GSS
Drain Current – Continuous (Note 1a) –20 A ID
– Pulsed –105
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
TJ, T
STG
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
1.2
1.0
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6681Z FDS6681Z 13’’ 12mm 2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev B (W)
°C/W
°C/W
FDS6681Z
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±10
GSS
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–30 V
–26
mV/°C
µA
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
Static Drain–Source
DS(on)
Gate Threshold Voltage
Temperature Coefficient
On–Resistance
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –10 V, ID = –20 A
= –4.5 V, ID = –17 A
V
GS
V
= –10 V, ID = –20 A,TJ=125°C
GS
gFS Forward Transconductance VDS = –5 V, ID = –20 A 79 S
–1 –1.8 –3 V
6
3.8
5.2
5.0
4.6
6.5
6.3
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 7540 pF
iss
C
Output Capacitance 1400 pF
oss
C
Reverse Transfer Capacitance
rss
V
= –15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
1120 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 20 35 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 660 1060 ns
d(off)
tf Turn–Off Fall Time
Q
Total Gate Charge at VGS = –10V 185 260 nC
g(TOT)
Q
Total Gate Charge at VGS = –5V 105 150 nC
g(TOT)
Qgs Gate–Source Charge 26 nC
Qgd Gate–Drain Charge
V
= –15 V, ID = –1 A,
DD
= –10 V, R
V
GS
V
= –15 V, ID = –20 A
DS
GEN
= 6 Ω
380 610 ns
47 nC
FDS6681Z Rev B (W)
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