Fairchild FDS6680AS service manual
May 2008
FDS6680AS
30V N-Channel PowerTrench
General Description
Features
®
SyncFET
™
FDS6680AS 30V N-Channel PowerTrench
tm
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDS6680AS
DS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
Applications
• DC/DC converter
• Low side notebooks
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
• 11.5 A, 30 V. R
R
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low
and fast switching
R
DS(ON)
• High power and current handling capability
5
6
7
8
max= 10.0 mΩ @ VGS = 10 V
DS(ON)
max= 12.5 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
®
SyncFET™
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 11.5 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
(Note 1c)
±20
1.2
1
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6680AS FDS6680AS 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
J
I
= 10 mA, Referenced to 25°C
D
= ±20 V, VDS = 0 V
V
GS
26
±100
mV/°C
µA
nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
= 10 mA, Referenced to 25°C
D
VGS = 10 V, ID = 11.5 A
V
= 4.5 V, ID = 9.5 A
GS
=10 V, ID =11.5A, TJ=125°C
V
GS
–4
8.4
10.3
12.3
10.0
12.5
15.5
mV/°C
mΩ
gFS Forward Transconductance VDS = 15 V, ID = 11.5 A 48 S
Dynamic Characteristics
C
Input Capacitance 1240 pF
iss
C
Output Capacitance 350 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
V
= 15 V, V
DS
f = 1.0 MHz
= 0 V,
GS
120 pF
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 18 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 27 42 ns
d(off)
tf Turn–Off Fall Time
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 18 32 ns
d(off)
tf Turn–Off Fall Time
Q
g
(TOT)
Total Gate Charge at Vgs=10V 22 30 nC
Qg Total Gate Charge at Vgs=5V 12 16 nC
Qgs Gate–Source Charge 3.5 nC
Qgd Gate–Drain Charge
V
= 15 V, ID = 1 A,
DS
= 10 V, R
V
GS
V
= 15 V, ID = 1 A,
DS
= 4.5 V, R
V
GS
V
= 15 V, ID = 11.5 A,
DD
GEN
GEN
= 6 Ω
11 21 ns
= 6 Ω
11 20 ns
3.4 nC
®
SyncFET™
FDS6680AS Rev B2(X)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Unit
Drain–Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain–Source Diode Forward Current 3.5 A
S
VSD Drain–Source Diode Forward
Voltage
Trr Diode Reverse Recovery Time IF = 11.5A, 18 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 12 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 3.5 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2)
0.5
0.6
0.7 V
FDS6680AS 30V N-Channel PowerTrench
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
®
SyncFET™
FDS6680AS Rev B2(X)
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