Fairchild FDS6675BZ service manual
tm
FDS6675BZ
P-Channel PowerTrench® MOSFET
-30V, -11A, 13mΩ
FDS6675BZ P-Channel PowerTrench
March 2009
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
D
D
D
D
G
S
SO-8
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note 1a) -11
-Pulsed -55
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1c) 1.0
Operating and Storage Temperature -55 to 150 °C
S
S
= 25°C unless otherwise noted
A
Features
Max r
Max r
Extended V
HBM ESD protection level of 5.4 KV typical (note 3)
High performance trench technology for extremely low
r
DS(on)
High power and current handing capability
RoHS Compliant
5
6
7
8
= 13mΩ at V
DS(on)
= 21.8mΩ at V
DS(on)
GS
= -10V, ID = -11A
GS
= -4.5V, ID = -9A
GS
range (-25V) for battery applications
4
3
2
1
®
MOSFET
A
W (Note 1b) 1.2
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6675BZ FDS6675BZ 13’’ 12mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev. B2
www.fairchildsemi.com1
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -24V, V
Gate to Source Leakage Current VGS = ±25V, V
ID = -250µA, referenced to
25
°C
= 0V -1 µA
GS
= 0V ±10 µA
DS
-20 mV/°C
FDS6675BZ P-Channel PowerTrench
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -2 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance V
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 335 450 pF
Reverse Transfer Capacitance 330 500 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 7.8 16 ns
Turn-Off Del ay Time 120 200 ns
Fall Time 60 100 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 7.2 nC
Gate to Drain Charge 11. 4 nC
ID = -250µA, referenced to
25
°C
15.7 mV/°C
VGS = -10V , ID = -11A 10.8 13.0
VGS = -4.5V, ID = -9A 17.4 21.8
VGS = -10V, ID = -11A
TJ = 125oC
= -5V, ID = -11A 34 S
DS
VDS = -15V, VGS = 0V,
15.0 18.8
1855 2470 pF
f = 1MHz
3.0 10 ns
VDD = -15V, ID = -11A
VGS = -10V, RGS = 6Ω
V
= -15V, V
DS
ID = -11A
V
= -15V, V
DS
ID = -11A
GS
GS
= -10V,
= -5V,
44 62 nC
25 35 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDS6675BZ Rev.B2
Source to Drain Diode Forward Voltage V
= 0V, IS = -2.1A -0.7 -1.2 V
GS
Reverse Recovery Time IF = -11A, di/dt = 100A/µs 42 ns
Reverse Recovery Charge IF = -11A, di/dt = 100A/µs 30 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
is determined by the user’s board design.
θCA
b)105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
2
c) 125°C/W when
mounted on a
minimun pad
www.fairchildsemi.com
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