Fairchild FDS6670A service manual
FDS6670A
G
FDS6
6
70
A
Single N-Channel, Logic Level, PowerTrench MOSFET
June 2003
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
S
S
S
S
S
=25oC unless otherwise noted
A
Features
• 13 A, 30 V. R
R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
6
7
8
= 8 mΩ @ VGS = 10 V
DS(ON)
= 10 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 13 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
±20
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1b) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6670A FDS6670A 13’’ 12mm 2500 units
2003 Fairchild Semiconductor Corporation
°C/W
FDS6670A Rev F (W)
Electrical Characteristics T
FDS6670A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
26
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ=55°C
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
mV/°C
10
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 10.5 A
VGS= 10 V, ID = 13 A, TJ=125°C
1 1.8 3 V
–5.3
6
7.2
8.5
10
14
mV/°C
8
mΩ
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, ID = 13 A 55 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 2220 pF
Output Capacitance 535 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
200 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.7
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 11 19 ns
Turn–On Rise Time 13 24 ns
VDD = 10 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
Turn–Off Delay Time 40 64 ns
Turn–Off Fall Time
Total Gate Charge 21 30 nC
Gate–Source Charge 6 nC
VDS = 15 V, ID = 13 A,
VGS = 5 V
Gate–Drain Charge
13 24 ns
7 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time 31 nS
Diode Reverse Recovery Charge
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
IF = 13 A, diF/dt = 100 A/µs
21 nC
µA
µA
nA
Ω
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6670A Rev F (W)
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