Fairchild FDS6614A service manual
FDS6614A
N-Channel Logic Level PowerTrench® MOSFET
FDS6614A
January 2000
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Applications
Features
9.3 A, 30 V. R
R
= 0.018 W @ VGS = 10 V
DS(on)
= 0.025 W @ VGS = 4.5 V.
DS(on)
Low gate charge (12nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
High power and current handling capability.
DC/DC converter
Load switch
Motor drives
D
D
5
4
D
D
6
7
G
S
SO-8
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current - Continuous
- Pulsed 40
PD
TJ, T
stg
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
S
S
Parameter
T
=25oC unless otherwise noted
A
(Note 1a)
(Note 1c)
8
Ratings
±
20
9.3 A
1.2
1.0
3
2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1)
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width
FDS6614A F DS 6614A 13’’ 12mm 2500 units
ã1999 Fairchild Semiconductor Corporation
Units
V
W
°C
°
C/W
°
C/W
Quantity
FDS6614A Rev. C
FDS6614A
DMOS Electrical Characteristics T
Symbol
Parameter
= 25°C unless otherwise noted
A
Test Conditions
Min Typ Max Units
Off Characteristics
BV
Drain-Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = –20 V, VDS = 0 V -100 nA
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
30 V
24
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold V oltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 9.3 A
= 10 V, ID = 9.3 A
V
GS
T
= 4.5 V, ID = 8 A
V
GS
@ 125°C
J
1 1.6 3 V
–4
0.015
0.022
0.019
0.018
0.030
0.025
mV/°C
Ω
gFS Forward Transconductance VDS = 5 V, ID = 9.3 A 26 S
Dynamic Characteristics
C
Input Capacitance 1160 pF
iss
C
Output Capacitance 250 pF
oss
C
Revers e Transfer Capacitance
rss
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
100 pF
Switching Characteristics (Note 2)
t
Turn-On Delay Tim e 9 17 ns
d(on)
tr Turn-On Rise Time 11 20 ns
t
Turn-Off Delay Time 23 37 ns
d(off)
tf Turn-Off Fall Time
Qg Total Gate Charge 12 17 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge
= 15 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
V
= 15 V, ID = 9.3 A,
DS
= 5 V
V
GS
GEN
= 6 Ω
8 16 ns
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.2 V
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
qJA
of the drain pins. R
is guaranteed by design while R
qJC
is determined by the user's board design.
qJA
a) 50° C/W when
mounted on a 1 in
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
2
c) 125° C/W when
mounted on a minimum pad.
FDS6614A Rev. C
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