Fairchild FDS6574A service manual
FDS6574A
May 2008
FDS6574A
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
D
and fast switching speed.
DS(ON)
D
D
D
SO-8
S
G
S
S
tmM
Features
• 16 A, 20 V. R
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
• RoHS Compliant
5
6
7
8
R
R
DS(ON)
DS(ON)
DS(ON)
= 6 mΩ @ V
= 7 mΩ @ V
= 9 mΩ @ V
= 4.5 V
GS
= 2.5 V
GS
= 1.8 V
GS
4
3
2
1
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
± 8
Drain Current – Continuous (Note 1a) 16 A
– Pulsed 80
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
1.2
1.0
Operating and Storage Junction Temperature Range –55 to +175
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6574A FDS6574A 13’’ 12mm 2500 units
2008 Fairchild Semiconductor Corporation
FDS6574A Rev B2(W)
Electrical Characteristics T
FDS6574A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, I
I
= 250 µA, Referenced to 25°C
D
= 250 µA
D
20 V
10
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, I
I
= 250 µA, Referenced to 25°C
D
= 250 µA
D
VGS = 4.5 V, ID = 16 A
VGS = 2.5 V, ID = 15 A
VGS = 1.8 V, ID = 13 A
VGS = 4.5 V, ID = 16 A,T
=125°C
J
0.4 0.6 1.5 V
–2.7
4
4.4
5
5.3
On–State Drain Current VGS = 4.5 V, VDS = 5 V 40 A
Forward Transconductance VDS = 5 V, ID = 16 A 115 S
mV/°C
6
mΩ
7
9
9
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 7657 pF
Output Capacitance 1432 pF
Reverse Transfer Capacitance
VDS = 10V, V
f = 1.0 MHz
GS
= 0 V,
775 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 19.5 35 ns
Turn–On Rise Time 22 36 ns
Turn–Off Delay Time 173 277 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 75 105 nC
Gate–Source Charge 9 nC
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
VDS = 10 V, ID = 16 A,
VGS = 4.5 V
82 131 ns
17 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.56 1.2 V
is determined by the user's board design.
µA
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
FDS6574A Rev B2(W)
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