Fairchild FDS5690 service manual
FDS5690
60V N-Channel PowerTrench
MOSFET
FDS5690
March 2000
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Motor drives
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
7 A, 60 V. R
•
R
DS(on)
DS(on)
= 0.028 Ω @ V
= 0.033 Ω @ V
= 10 V
GS
= 6 V.
GS
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed 50
Power Dissipation for Si ngl e Operat i o n
Operating and Storage Junction Temperat ure Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
20 V
±
7A
2.5 W
1.2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS5690 FDS5690 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
C
°
C/W
°
C/W
°
FDS5690 Rev. C
FDS5690
yp
DMOS Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
∆BV
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = 250 µA, Referenced to 25°C57mV/
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA22.54V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C-5.9mV/
VGS = 10 V, ID = 7 A
V
= 10 V, ID = 7 A, TJ=125°C
GS
V
= 6 V, ID = 6.5 A
GS
On-State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 10 V, ID = 7 A 24 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1107 pF
Output Capacitance 149 pF
Reverse Transfer Capacitance
V
= 30 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
0.028
0.022
0.050
0.037
0.033
0.025
72 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 10 18 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 24 39 ns
Turn-Off Fall Time
Total Gate Charge 23 32 nC
Gate-Source Charge 4 nC
Gate-Drain Charge
V
= 30 V, ID = 1 A,
DD
V
= 10 V, R
GS
V
= 30 V, ID = 7 A,
DS
V
= 10 V,
GS
GEN
= 6
Ω
10 18 ns
6.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
is guaranteed by design while R
θJC
a) 50° C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
is determined by the user's board design.
θJA
2
b) 105° C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
(Note 2)
0.75 1.2 V
c) 125° C/W when
2
mounted on a 0.003 in
pad of 2 oz. copper.
2
FDS5690 Rev. C
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