FDS4935BZ
Dual 30 Volt P-Channel PowerTrench MOSFET
September 2006
FDS4935BZ
tm
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications.
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D1
D
D1
D
D2
D
D2
D
SO-8
Pin 1
SO-8
S2
Absolute Maximum Ratings T
G1
G
S1
S
G2
S
S
=25oC unless otherwise noted
A
Features
x –6.9 A, –30 V. R
R
x Extended V
x ESD protection diode (note 3)
x High performance trench technology for extremely
low R
DS(ON)
x High power and current handling capability
range (–25V) for battery applications
GSS
5
6
7
8
= 22 m: @ VGS = –10 V
DS(ON)
= 35 m: @ VGS = – 4.5 V
DS(ON)
4
Q1
Q2
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DS\
VGS Gate-Source Voltage +25 V
ID Drain Current – Continuous (Note 1a) –6.9 A
– Pulsed –50
P
D
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +150
1.0
0.9
W
qC
Thermal Characteristics
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units
2006 Fairchild Semiconductor Corpora tion
FDS4935BZ Rev B1 (W)
qC/W
qC/W
FDS4935BZ
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BVDSS
'T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage VGS = +25 V, VDS = 0 V +10
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
= 0 V, ID = –250 PA
V
GS
I
= –250 PA,Referenced to 25qC
D
–30 V
24
mV/qC
PA
PA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
'VGS(th)
'T
r
DS(on)
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
= VGS, ID = –250 PA
V
DS
I
= –250 PA,Referenced to 25qC
D
VGS = –10 V, ID = –6.9 A
V
= –4.5 V, ID = –5.3 A
GS
= –10 V, ID = –6.9A,TJ=125qC
V
GS
gFS Forward Transconductance VDS = –5 V, ID = –6.9 A 22 S
–1 –1.9 –3 V
–5
18
27.5
26
22
35
34
mV/qC
m:
Dynamic Characteristics
C
Input Capacitance 1360 pF
iss
C
Output Capacitance 240 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
200 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 13 23 ns
t
Turn–Off Delay Time 68 108 ns
d(off)
tf Turn–Off Fall Time
Q
Total Gate Charge, VGS = 10V 29 40 nC
g(TOT)
Q
Total Gate Charge, VGS = 5V 16 23 nC
g(TOT)
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –15 V, ID = –6.9 A,
V
DS
V
= –10 V
GS
GEN
= 6 :
38 61 ns
7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
V
SD
t
RR
Drain–Source Diode Forward
Voltage
Reverse Recovery Time 24 ns
QRR Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
TJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
is guaranteed by design while R
TJC
a) 78°C/W steady state
when mounted on a
2
pad of 2 oz
1in
copper
is determined by the user's board design.
TCA
V
= 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V
GS
= –8.8 A,
I
F
d
= 100 A/µs (Note 2)
iF/dt
b) 125°C/W when
mounted on a .04 in
pad of 2 oz copper
2
9 nC
c) 135°C/W when mounted on a
minimum pad.
FDS4935BZ Rev B1 (W)
Typical Characteristics
FDS4935BZ
50
VGS = -10V -5.0V
40
-6.0V
30
20
, DRAIN CURRENT (A)
D
-I
10
0
01234
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
-4.5V
-4.0V
-3.5V
-3.0V
3
VGS= -3.5V
2.6
2.2
-4.0V
1.8
, NORMALIZED
1.4
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.6
1
-4.5V
-5.0V
-6.0V
0 1020304050
-I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -8.8A
V
= -10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.08
0.06
0.04
TA = 25oC
, ON-RESISTANCE (OHM)
0.02
DS(ON)
R
0
246810
TA = 125oC
-V
, GATE TO SOURCE VOLTAGE (V)
GS
-8.0V
-10V
ID = -4.4A
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
22.533.544.55
TA = 125oC
-V
, GATE TO SOURCE VOLTAGE (V)
GS
-55oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
00.40.81.21.6
-V
SD
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V )
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)
Typical Characteristics
FDS4935BZ
10
2000
ID = -8.8A
8
VDS = -10V
-20V
6
-15V
4
, GATE-SOURCE VOLTAGE (V)
2
GS
-V
0
0 6 12 18 24 30 36
, GATE CHARGE (nC)
Q
g
1600
C
1200
800
C
CAPACITANCE (pF)
400
C
rss
0
0 5 10 15 20 25 30
oss
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100Ps
1ms
10ms
100ms
1
1s
DC
0.1
VGS = -10V
SINGLE PULSE
= 125oC/W
R
JA
T
T
= 25oC
A
, DRAIN CURRENT (A)
D
-I
0.01
0.01 0.1 1 10 100
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W )
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
f = 1 MHz
V
GS
iss
SINGLE PULSE
R
= 125°C/W
JA
T
= 25°C
T
A
= 0 V
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE PULSE
, TIME (sec)
t
1
R
(t) = r(t) * R
JA
T
R
= 125oC/W
JA
T
P(pk)
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
JA
T
(t)
JA
T
/ t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935BZ Rev B1 (W)
2
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
Semiconductor reserves the right to make changes at
any time without notice to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
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