Fairchild FDS4935BZ service manual

FDS4935BZ

Dual 30 Volt P-Channel PowerTrench MOSFET

September 2006

FDS4935BZ

tm

General Description

This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R

specifications.

DS(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

D1

D

D1

D

D2

D

D2

D

SO-8

Pin 1

SO-8

S2

Absolute Maximum Ratings T

G1

G

S1

S

G2

S

S

=25oC unless otherwise noted

A

Features

x –6.9 A, –30 V. R

R

x Extended V

x ESD protection diode (note 3)

x High performance trench technology for extremely

low R

DS(ON)

x High power and current handling capability

range (–25V) for battery applications

GSS

5

6

7

8

= 22 m: @ VGS = –10 V

DS(ON)

= 35 m: @ VGS = – 4.5 V

DS(ON)

4

Q1

Q2

3

2

1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –30 V

DS\

VGS Gate-Source Voltage +25 V

ID Drain Current – Continuous (Note 1a) –6.9 A

– Pulsed –50

P

D

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

1.0

0.9

W

qC

Thermal Characteristics

R

TJA

R

TJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units

2006 Fairchild Semiconductor Corpora tion

FDS4935BZ Rev B1 (W)

qC/W

qC/W

FDS4935BZ

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BVDSS
'T

I

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage VGS = +25 V, VDS = 0 V +10

GSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

= 0 V, ID = –250 PA

V

GS

I

= –250 PA,Referenced to 25qC

D

–30 V

24

mV/qC

PA

PA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

'VGS(th)
'T

r

DS(on)

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source

On–Resistance

= VGS, ID = –250 PA

V

DS

I

= –250 PA,Referenced to 25qC

D

VGS = –10 V, ID = –6.9 A
V

= –4.5 V, ID = –5.3 A

GS

= –10 V, ID = –6.9A,TJ=125qC

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –6.9 A 22 S

–1 –1.9 –3 V

–5

18

27.5
26

22
35
34

mV/qC

m:

Dynamic Characteristics

C

Input Capacitance 1360 pF

iss

C

Output Capacitance 240 pF

oss

C

Reverse Transfer Capacitance

rss

= –15 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

200 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 12 22 ns

d(on)

tr Turn–On Rise Time 13 23 ns

t

Turn–Off Delay Time 68 108 ns

d(off)

tf Turn–Off Fall Time

Q

Total Gate Charge, VGS = 10V 29 40 nC

g(TOT)

Q

Total Gate Charge, VGS = 5V 16 23 nC

g(TOT)

Qgs Gate–Source Charge 4 nC

Qgd Gate–Drain Charge

= –15 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

= –15 V, ID = –6.9 A,

V

DS

V

= –10 V

GS

GEN

= 6 :

38 61 ns

7 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A

V

SD

t

RR

Drain–Source Diode Forward
Voltage

Reverse Recovery Time 24 ns

QRR Reverse Recovery Charge

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

TJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

is guaranteed by design while R

TJC

a) 78°C/W steady state

when mounted on a

2

pad of 2 oz

1in
copper

is determined by the user's board design.

TCA

V

= 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V

GS

= –8.8 A,

I

F

d

= 100 A/µs (Note 2)

iF/dt

b) 125°C/W when

mounted on a .04 in
pad of 2 oz copper

2

9 nC

c) 135°C/W when mounted on a

minimum pad.

FDS4935BZ Rev B1 (W)