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FDS4685 40V P-Channel PowerTrench
June 2005
FDS4685
40V P-Channel PowerTrench
®
MOSFET
Features
–8.2 A, –40 V R
R
Fast switching speed
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
SO-8
Absolute Maximum Ratings
DS(ON)
DS(ON)
D
D
Pin 1
= 0.027 Ω @ V
= 0.035 Ω @ V
D
D
S
= –10 V
GS
= –4.5 V
GS
G
S
S
T
= 25°C unless otherwise noted
A
Applications
Power management
Load switch
Battery protection
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V – 20V).
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
T
, T
J
STG
Thermal Characteristics
R
JA
R
JA
R
JC
Drain-Source Voltage –40 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) –8.2 A
- Pulsed –50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.4
(Note 1c) 1.2
Operating and Storage Junction Temperature Range –55 to +150
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
20 V
C/W
®
MOSFET
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4685 FDS4685 13” 12mm 2500 units
©2005 Fairchild Semiconductor Corporation
FDS4685 Rev. C(W)
1
www.fairchildsemi.com
θ
θ
θ
∆
µ
±
∆
Ω
FDS4685 40V P-Channel PowerTrench
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
∆ T
J
I
DSS
I
GSS
On Characteristics (Note 2)
V
GS(th)
V
GS(th)
∆ T
J
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain–Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
JA
R
JC
Drain–Source Breakdown Voltage V
Breakdown Voltage Temperature
= 0 V, I
GS
I
= –250 µ A, Referenced to 25 ° C –32 mV/ ° C
D
= –250 µ A –40 V
D
Coefficient
Zero Gate Voltage Drain Current V
Gate–Body Leakage V
Gate Threshold Voltage V
Gate Threshold Voltage
= –32 V, V
DS
= ± 20 V, V
GS
= V
DS
GS
I
= –250 µ A, Referenced to 25 ° C 4.7 mV/ ° C
D
= 0 V –1
GS
= 0 V
DS
, I
= –250 µ A–1–1.6 –3 V
D
100 nA
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance V
Input Capacitance V
Output Capacitance 256 pF
V
= –10 V, I
GS
V
= –4.5 V, I
GS
V
= –10 V, I
GS
= –5 V, I
DS
= –20 V, V
DS
f = 1.0 MHz
= –8.2 A
D
= –7 A
D
= –8.2 A, T
D
= –8.2 A 22 S
D
= 0 V,
GS
= 125 ° C
J
22
27
29
35
31
42
1872 pF
m Ω
Reverse Transfer Capacitance 134 pF
Gate Resistance V
Tu r n–On Delay Time V
Tu r n–On Rise Time 11 20 ns
= 15 mV, f = 1MHz 4
GS
= –20 V, I
DD
V
= –10 V, R
GS
= –1 A,
D
GEN
= 6 Ω
14 25 ns
Tu r n–Off Delay Time 50 80 ns
Tu r n–Off Fall Time 18 32 ns
Total Gate Charge V
Gate–Source Charge 5.6 nC
DS
V
GS
= –20 V, I
= –5 V
= –8.2 A,
D
19 27 nC
Gate–Drain Charge 6.1 nC
Drain–Source Diode Forward Voltage V
Diode Reverse Recovery Time I
Diode Reverse Recovery Charge 15 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
a) 50°C/W when mounted
is determined by the user's board design..
CA
2
pad of 2 oz
on a 1 in
copper
= 0 V, I
GS
= –8.2 A,
F
d
/d
= 100 A/µs
iF
t
= –2.1 A (Note 2) –0.7 –1.2 V
S
26 nS
b) 105°/W when mounted
on a .04 in
copper
2
pad of 2 oz
c) 125°/W when mounted
on a minimum pad.
A
®
MOSFET
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%
FDS4685 Rev. C(W)
2
www.fairchildsemi.com
Typical Characteristics:
FDS4685 40V P-Channel PowerTrench
50
VGS = -10V -6.0V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
-4.5V
-4.0V
-3.5V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
ID = -8.2A
1.6
V
= - 10V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
-3.0V
2.4
2.2
VGS = - 3.5V
2
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
01020304050
-4.0V
-4.5V
-ID, DRAIN CURRENT (A)
-5.0V
-6.0V
-8.0V
-10V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
0.08
0.07
0.06
0.05
0.04
, ON-RESISTANCE (OHM)
0.03
TA = 25°C
DS(ON)
R
0.02
0.01
246810
TA = 125°C
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -4.1A
®
MOSFET
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55°C
125°C
Figure 5. Transfer Characteristics.
25°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125°C
25°C
-55°C
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4685 Rev. C(W)
3
www.fairchildsemi.com
Typical Characteristics:
FDS4685 40V P-Channel PowerTrench
10
ID = -8.2A
VDS = -10V
8
6
-30V
4
, GATE-SOURCE VOLTAGE (V)
2
GS
-V
0
051015 20 25 30 35 40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1
D
0.1
VGS = -10V
SINGLE PULSE
R
= 125°C/W
θ
JA
T
= 25°C
A
, DRAIN CURRENT (A)
-I
DC
1s
10s
0.01
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
100µs
1ms
10ms
-20V
2500
2000
C
ISS
f = 1 MHz
V
GS
1500
1000
CAPACITANCE (pF)
C
OSS
500
C
RSS
0
051015 20 25 30 35 40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSE
R
= 125°C/W
θ
JA
T
= 25°C
A
= 0 V
®
MOSFET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
(t) = r(t) * R
θ
JA
R
= 125°C/W
θ
JA
P(pk)
t
1
t
2
- TA = P * R
T
J
Duty Cycle, D = t
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
θ JA
(t)
JA
θ
/ t
1
2
FDS4685 Rev. C(W)
4
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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2
E
CMOS™
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Across the board. Around the world.™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FDS4685 40V P-Channel PowerTrench
®
MOSFET
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
FDS4685 Rev. C(W)
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5 www.fairchildsemi.com
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