Fairchild FDS4672A service manual
FDS4672A
February 2007
FDS4672A
40V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
D
D
and fast switching speed.
DS(ON)
D
D
S
SO-8
S
S
G
Features
• 11 A, 40 V. R
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• Low gate charge (35 nC typical)
• High power and current handling capability
• RoHS Compliant
= 13 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
tm
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 11 A
– Pulsed 50
E
AS
PD
TJ, T
STG
Single Pulse Avalanche Energy (Note
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +175
3) 181
(Note 1c)
±12
mJ
1.4
1.2
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4672A FDS4672A 13’’ 12mm 2500 units
FDS4672A
©2007 Fairchild Semiconductor Corporation
Rev C1 (W)
FDS4672A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
= 0 V, ID = 250 μA
V
GS
= 250 μA, Referenced to 25°C
I
D
40 V
37
mV/°C
μA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current VGS = 4.5 V, VDS = 5 V 50 A
= VGS, ID = 250 μA
V
DS
= 250 μA, Referenced to 25°C
I
D
= 4.5 V, ID = 11 A
V
GS
=4.5 V, ID =11A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 11 A 65 S
0.8 1.2 2.0 V
–4
10
15
21
13
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 4766 pF
iss
C
Output Capacitance 346 pF
oss
C
Reverse Transfer Capacitance
rss
= 20 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
155 pF
Switching Characteristics (Note 2)
V
= 20 V, ID = 1 A,
t
Turn–On Delay Time 17 31 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 43 68 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 35 49 nC
Qgs Gate–Source Charge 7.8 nC
Qgd Gate–Drain Charge
DD
V
= 4.5 V, R
GS
= 20 V, ID = 11 A,
V
DS
V
= 4.5 V
GS
GEN
= 6 Ω
14 25 ns
8.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3.Starting T
= 25oC, L = 3mH,ID = 11A, VDD = 40V, VGS = 10V
J
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
FDS4672A Rev C1 (W)
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