FDMC7672
N-Channel Power Trench®MOSFET
30 V, 16.9 A, 5.7 m:
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 5.7 m: at VGS = 10 V, ID = 16.9 A
DS(on)
= 7.0 m: at VGS = 4.5 V, ID = 15.0 A
DS(on)
DS(on)
March 2010
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
®
process that has
FDMC7672 N-Channel Power Trench
®
MOSFET
Top
Pin 1
S
Bottom
G
S
S
D
D
D
D
5
D
D
6
D
7
8
D
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 20
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 144 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.3 W
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 16.9
A
Thermal Characteristics
4
G
S
3
S
2
S
1
A -Continuous T
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7672 FDMC7672 MLP 3.3x3.3 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
1
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= 250 PA, referenced to 25 °C 13 mV/°C
D
V
= 24 V, VGS= 0 V 1
DS
= 125 °C 250
T
J
Gate to Source Leakage Current VGS = 20 V, VDS= 0 V 100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 PA, referenced to 25 °C -6 mV/°C
D
= 10 V, ID = 16.9 A 4.3 5.7
V
GS
V
= 4.5 V, ID = 15.0 A 5.4 7.0
GS
= 10 V, ID = 16.9 A
V
GS
T
= 125 °C
J
5.5 6.9
Forward Transconductance VDD = 5 V, ID = 16.9 A 82 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1050 1400 pF
Reverse Transfer Capacitance 80 120 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 :
2925 3890 pF
2.7
PA
m:
FDMC7672 N-Channel Power Trench
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 31 49 ns
= 15 V, ID = 16.9 A,
V
DD
V
= 10 V, R
GS
GEN
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
= 0 V to 4.5 V 18 24 nC
GS
Total Gate Charge 9nC
Gate to Drain “Miller” Charge 4 nC
Drain-Source Diode Characteristics
V
= 0 V, IS= 16.9 A (Note 2) 0.83 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
TJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 18 32 nC
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a. 53 °C/W when mounted on
2
pad of 2 oz copper
a 1 in
GS
= 0 V, IS= 1.9 A (Note 2) 0.72 1.2
V
GS
= 16.9 A, di/dt = 100 A/Ps
I
F
= 6 :
V
DD
I
= 16.9 A
D
= 15 V
is guaranteed by design while R
TJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
13 24 ns
40 57 nC
V
39 62 ns
is determined by
TCA
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I
3. E
AS
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
= 7.9 A.
AS
2
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench
Typical Characteristics T
50
40
30
20
VGS = 3.5 V
, DRAIN CURRENT (A)
D
10
I
0
0.0 0.5 1.0 1.5
V
DS
Figure 1.
1.6
ID = 16.9 A
= 10 V
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
,
JUNCTION TEMPERATURE (oC)
J
= 25 °C unless otherwise noted
J
VGS = 3 V
4.5
4.0
VGS = 3.5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
3.5
3.0
VGS = 4 V
2.5
2.0
NORMALIZED
1.5
VGS = 4.5 V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 1020304050
VGS = 6 V
I
,
DRAIN CURRENT (A)
D
VGS = 10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
20
)
:
m
(
15
10
DRAIN TO
,
DS(on)
r
5
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID= 16.9 A
V
,
GATE TO SOURCE VOLTAGE (V)
GS
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
MOSFET
50
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
40
VDS= 5 V
30
20
TJ = 150 oC
, DRAIN CURRENT (A)
10
D
I
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
TJ = 25 oC
TJ = -55 oC
100
VGS= 0 V
10
1
TJ= 150 oC
TJ = 25 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55 oC
Forward Voltage vs Source Current
3
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FDMC7672 N-Channel Power Trench
Typical Characteristics T
10
ID= 16.9 A
8
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 9 18 27 36 45
Figure 7.
20
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
Figure 9.
Switching Capability
V
= 10 V
DD
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
TJ= 125 oC
tAV, TIME IN AVALANCHE (ms)
U n c l a m p e d I n d u c t i v e
= 25 °C unless otherwise noted
J
VDD = 15 V
VDD = 20 V
TJ= 25 oC
TJ= 100 oC
200
5000
1000
CAPACITANCE (pF)
100
f = 1 MHz
= 0 V
V
GS
50
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
70
60
50
40
30
VGS= 10 V
DRAIN CURRENT (A)
20
,
D
I
VGS= 4.5 V
10
R
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
c
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
= 4.0 oC/W
T
JC
o
(
C
)
C u r r e n t v s C a s e T e m p e r a t u re
C
iss
C
oss
C
rss
®
MOSFET
70
10
1
THIS AREA IS
LIMITED BY r
, DRAIN CURRENT (A)
D
I
0.1
0.01
SINGLE PULSE
= MAX RATED
T
J
R
TJA
T
A
0.01 0.1 1 10 100
Figure 11.
DS(on)
= 125 oC/W
= 25 oC
VDS, DRAIN to SOURCE VOLTAGE (V)
Fo rw ar d B ia s Sa fe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
100 Ps
1 ms
10 ms
100 ms
1 s
10 s
DC
200
2000
1000
VGS = 10 V
100
10
SINGLE PULSE
PEAK TRANSIENT POWER (W)
,
)
PK
(
P
0.5
= 125 oC/W
R
T
JA
1
= 25 oC
T
A
10-410-310-210
t, PULSE WIDTH (sec)
Figure 12.
S i n g l e P u l s e M a x i m u m
-1
110
100 1000
Power Dissipation
4
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FDMC7672 N-Channel Power Trench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
= 125 oC/W
T
JA
-4
10
-3
10
NORMALIZED THERMAL
JA
T
IMPEDANCE, Z
0.001
0.0005
0.1
0.01
= 25 °C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
110
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
100 1000
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
5
www.fairchildsemi.com
Dimensional Outline and Pad Layout
FDMC7672 N-Channel Power Trench
0.10 C
2X
PIN#1 QUADRANT
0.8 MAX
0.10 C
0.08 C
SEATING
PLANE
PIN #1 IDENT
0.55
(4X)
0.45
0.05
0.00
1.150
3.30
TOP VIEW
SIDE VIEW
2.32
2.22
0.785
1
A
B
3.30
®
0.10 C
2X
RECOMMENDED LAND PATTERN
(0.203)
4
0.350
MOSFET
R0.150
0.299
8
0.65
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILE NAME : MLP08SREVA
E. LAND PATTERN RECOMMENDATION IS
BASED ON FSC DESIGN ONLY
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
0.40
5
0.30
1.95
BOTTOM VIEW
2.05
1.95
(8X)
0.10 CAB
0.05
C
6
www.fairchildsemi.com
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m
®
t
tm
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intended to be an exhaustive list of all such trademarks.
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FAST
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®
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t
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®
®
®
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®
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Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
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MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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Motion-SPM™
OptiHiT™
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®
®
m
®
PDP SPM™
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SM
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PowerXS™
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®
®
™
Saving our world, 1mW/W/kW at a time™
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®
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®*
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FDMC7672 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I47
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