Fairchild FDMC7672 service manual

FDMC7672

N-Channel Power Trench®MOSFET

30 V, 16.9 A, 5.7 m:

Features

 Max r

 High performance technology for extremely low r

 Termination is Lead-free and RoHS Compliant

= 5.7 m: at VGS = 10 V, ID = 16.9 A

DS(on)

= 7.0 m: at VGS = 4.5 V, ID = 15.0 A

DS(on)

March 2010



General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application

 DC - DC Buck Converters

 Notebook battery power management

 Load switch in Notebook

®

process that has

FDMC7672 N-Channel Power Trench

®

MOSFET

Top

Pin 1

S

Bottom

G

S

D

5

D

6

D

7

8

D

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 20

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 144 mJ

Power Dissipation TA = 25 °C (Note 1a) 2.3 W

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 16.9

A

Thermal Characteristics

4

G

S

3

S

2

S

1

A -Continuous T

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7672 FDMC7672 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

1

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

I

= 250 PA, referenced to 25 °C 13 mV/°C

D

V

= 24 V, VGS= 0 V 1

DS

= 125 °C 250

T

J

Gate to Source Leakage Current VGS = 20 V, VDS= 0 V 100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -6 mV/°C

D

= 10 V, ID = 16.9 A 4.3 5.7

V

GS

V

= 4.5 V, ID = 15.0 A 5.4 7.0

GS

= 10 V, ID = 16.9 A

V

GS

T

= 125 °C

J

5.5 6.9

Forward Transconductance VDD = 5 V, ID = 16.9 A 82 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1050 1400 pF

Reverse Transfer Capacitance 80 120 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 :

2925 3890 pF

2.7

PA

m:

FDMC7672 N-Channel Power Trench

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 31 49 ns

= 15 V, ID = 16.9 A,

V

DD

V

= 10 V, R

GS

GEN

Fall Time 510ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge V

= 0 V to 4.5 V 18 24 nC

GS

Total Gate Charge 9nC

Gate to Drain “Miller” Charge 4 nC

Drain-Source Diode Characteristics

V

= 0 V, IS= 16.9 A (Note 2) 0.83 1.2

V

SD

t

rr

Q

rr

NOTES:

1. R

TJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 18 32 nC

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 53 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

GS

= 0 V, IS= 1.9 A (Note 2) 0.72 1.2

V

GS

= 16.9 A, di/dt = 100 A/Ps

I

F

= 6 :

V

DD

I

= 16.9 A

D

= 15 V

is guaranteed by design while R

TJC

b.125 °C/W when mounted on a minimum pad of 2 oz copper

13 24 ns

40 57 nC

V

39 62 ns

is determined by

TCA

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I

3. E

AS

= 7.9 A.

AS

2

www.fairchildsemi.com

FDMC7672 N-Channel Power Trench

Typical Characteristics T

50

40

30

20

VGS = 3.5 V

, DRAIN CURRENT (A)

D

10

I

0

0.0 0.5 1.0 1.5

V

DS

Figure 1.

1.6

ID = 16.9 A

= 10 V

V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 10 V

VGS = 6 V

VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

,

JUNCTION TEMPERATURE (oC)

J

= 25 °C unless otherwise noted

J

VGS = 3 V

4.5

4.0

VGS = 3.5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

3.5

3.0

VGS = 4 V

2.5

2.0

NORMALIZED

1.5

VGS = 4.5 V

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 1020304050

VGS = 6 V

I

,

DRAIN CURRENT (A)

D

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

20

)

:

m

(

15

10

DRAIN TO

,

DS(on)

r

5

SOURCE ON-RESISTANCE

0

246810

Figure 4.

ID= 16.9 A

V

,

GATE TO SOURCE VOLTAGE (V)

GS

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

TJ= 125 oC

TJ= 25 oC

Source Voltage

®

MOSFET

50

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

40

VDS= 5 V

30

20

TJ = 150 oC

, DRAIN CURRENT (A)

10

D

I

0

1234

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

100

VGS= 0 V

10

1

TJ= 150 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com