Fairchild FDMC2610 service manual

tm

FDMC2610
N-Channel UltraFET Trench® MOSFET

200V, 9.5A, 200mΩ

Features

 Max r

 Max r

 Low Profile - 1mm max in a Power 33

 RoHS Compliant

= 200mΩ at VGS = 10V, ID = 2.2A

DS(on)

= 215mΩ at VGS = 6V, ID = 1.5A

DS(on)

General Description

This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.

Application

FDMC2610 N-Channel UltraFET Trench

January 2007

 DC - DC Conversion

5

Bottom

7

6

8

D

1

2

3

4

Top

D

D

D

D

5

D

6

D

7

G

S

S

S

D

8

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 200 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Silicon limited) TC = 25°C 9.5

-Pulsed 15

Power Dissipation TC = 25°C 42

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

= 25°C (Note 1a) 2.2

A

= 25°C (Note 1a) 2.1

A

Thermal Characteristics

®

MOSFET

G

4

S

3

2

S

S

1

A -Continuous T

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3

Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC2610 FDMC2610 Power 33 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.C

°C/W

1

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FDMC2610 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 200 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

ID = 250μA, referenced to 25°C 199 mV/°C

VDS = 160V, 1

V

= 0V TJ = 125°C 100

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 3.2 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 5V, ID = 2.2A 7 S

ID = 250μA, referenced to 25°C -9.9 mV/°C

VGS = 10V, ID = 2.2A 175 200

VGS = 10V, ID = 2.2A , TJ = 125°C 347 397

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 41 55 pF

Reverse Transfer Capacitance 12 20 pF

VDS = 100V, VGS = 0V,
f = 1MHz

720 960 pF

Gate Resistance f = 1MHz 0.7 Ω

μA

mΩVGS = 6V, ID = 1.5A 188 215

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 13 24 ns

Turn-Off Delay Time 29 47 ns

VDD = 100V, ID = 2.2A
VGS = 10V, R

GEN

Fall Time 16 29 ns

Total Gate Charge at 10V V

= 0V to 10V

GS

Gate to Source Gate Charge 3 nC

Gate to Drain “Miller” Charge 3.6 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1: R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 11 4 171 nC

a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper

= 0V, IS = 2.2A (Note 2) 0.8 1.2 V

GS

IF = 2.2A, di/dt = 100A/μs

= 24Ω

VDD = 100V
ID = 2.2A

17 31 ns

12.3 18 nC

69 104 ns

is guaranteed by design while R

θJC

b. 135°C/W when mounted on a
minimum pad of 2 oz copper

is determined by

θCA

FDMC2610 Rev.C

2

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FDMC2610 N-Channel UltraFET Trench

Typical Characteristics T

15

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

VGS = 10V

10

5

, DRAIN CURRENT (A)

D

I

0

0123

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

On-Region Characteristics Figure 2.

2.4

PULSE DURATI ON = 80μs

2.2

DUTY CYCLE = 0.5%MAX

2.0

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

0.4

DRAIN TO SOURCE ON-RESISTANCE

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = 4.5V

= 25°C unless otherwise noted

J

V

= 7V

GS

VGS = 6V

V

= 5V

GS

ID =2.2A

V

= 10V

GS

1.8

V

= 4.5V

GS

1.6

1.4

1.2

NORMALIZED

1.0

0.8

DRAIN TO SOURCE ON-RESISTANCE

03691215

V

VGS = 10V

ID, DRAIN CURRENT(A)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

V

= 5V

GS

V

GS

= 6V

GS

= 7V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

600

(mΩ)

500

400

, DRAIN TO

300

DS(on)

r

200

SOURCE ON-RESISTANCE

100

45678910

Figure 4.

ID = 1.4A

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TA = 150oC

TA = 25oC

O n - R es i s t a n c e vs G a t e t o

Source Voltage

®

MOSFET

12

9

6

, DRAIN CURRENT (A)

3

D

I

0

FDMC2610 Rev.C

PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

23456

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 5. Transfer Characteristics

3

20

10

V

= 0V

GS

1

TJ = 150oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

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