Fairchild FDMA1025P service manual

May 20

FDMA1025P Dual P-Channel PowerTrench

FDMA1025P
Dual P-Channel PowerTrench

–20V, –3.1A, 155m:
Features

 Max r

 Max r

 Low profile - 0.8mm maximum - in the new package MicroFET

2X2 mm

 RoHS Compliant

Free from halogenated compounds and antimony



oxides

= 155m: at VGS = –4.5V, ID = –3.1A

DS(on)

= 220m: at VGS = –2.5V, ID = –2.3A

DS(on)

PIN 1

S1 G1 D2

D1

D2

®

MOSFET

General Description

This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra ­portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.

The MicroFET 2X2 package offers exceptional thermal

formance for its physical size and well suited to linear mode

per
applications.

Application

 DC - DC Conversion

S1

G1

16

1

2

2

6

D1

5

5

G2

tm

®

MOSFET

D2

3

3

D1 G2 S2

MicroFET 2X2

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous (Note 1a) –3.1

-Pulsed –6

Power Dissipation for Single Operation (Note 1a) 1.4

Power Dissipation (Note 1b) 0.7

Operating and Storage Junction Temperature Range –55 to +150 °C

= 25°C unless otherwise noted

A

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86

Thermal Resistance Single Operation, Junction to Ambient (Note 1b) 173

Thermal Resistance Dual Operation, Junction to Ambient (Note 1c) 69

Thermal Resistance Dual Operation, Junction to Ambient (Note 1d) 151

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

025 FDMA1025P MicroFET 2X2 7’’ 8mm 3000 units

4

4

S2

A

W

°C/W

©2010 Fairchild Semiconductor Corporation
FDMA1025P Rev.B4

1

www.fairchildsemi.com

FDMA1025P Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

I

= –250PA, referenced to 25°C 14 mV/°C

D

VDS = –16V, –1

= 0V TJ = 125°C

V

GS

–100

Gate to Source Leakage Current VGS = ±12V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.4

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

I

= –250PA, referenced to 25°C –3.8 mV/°C

D

V

= –4.5V, ID = –3.1A 88 155

GS

= –2.5V, ID = –2.3A 144 220

GS

= –4.5V, ID = –3.1A,TJ = 125°C 121 220

V

GS

–0.9

–1.5 V

Forward Transconductance VDS = –5V, ID = –3.1A 6.2 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 80 105 pF

Reverse Transfer Capacitance 45 70 pF

= –10V, VGS = 0V,

V

DS

f = 1MHz

340 450 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 14 26 ns

Turn-Off Delay Time 13 24 ns

V

= –10V, ID = –3.1A

DD

= –4.5V, R

V

GS

GEN

= 6:

Fall Time 816ns

Total Gate Charge at 4.5V VGS= 0V to –4.5V

Gate to Source Gate Charge 0.8 nC

V

DD

= –3.1A

I

D

= –10V

Gate to Drain “Miller” Charge 1.0 nC

510ns

3.4 4.8 nC

PA

m:V

®

MOSFET

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

FDMA1025P Rev.B4

Maximum Continuous Source-Drain Diode Forward A

Source to Drain Diode Forward Voltage VGS= 0V, IS= –1.1A (Note 2) –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 10 15 nC

= –3.1A, di/dt = 100A/Ps

I

F

2

–1.1

17 26 ns

www.fairchildsemi.com

Notes:

1. R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.

(a) R

= 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.

TJA

(b) R

= 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.

TJA

(c) R

= 69oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.

TJA

(d) R

= 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

TJA

o

b)173

a)86oC/W when
mounted on a 1

2

pad of 2 oz

in
copper.

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0

C/W when
mounted on a
minimum pad of 2
oz copper.

is guaranteed by design while R

TJC

o

C/W when

c)69
mounted on a 1 in
pad of 2 oz copper.

2

is determined by the

TJA

o

d)151

C/W when
mounted on a
minimum pad of 2 oz
copper.

FDMA1025P Dual P-Channel PowerTrench

®

MOSFET

FDMA1025P Rev.B4

4

www.fairchildsemi.com