Fairchild FCH22N60N service manual
tm
FCH22N60N
D
G
S
G
S
D
TO-247
N-Channel MOSFET
600V, 22A, 0.165Ω
June 2010
SupreMOS
FCH22N60N N-Channel MOSFET
TM
Features
•R
•BV
• Ultra Low Gate Charge ( Typ. Qg = 45nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A
DS(on)
>650V @ TJ = 150oC
DSS
= 25oC unless otherwise noted*
C
Symbol Parameter FCH22N60N Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Continuous (T
Continuous (T
(T
= 25oC) 205 W
C
Derate above 25
STG
Drain Current
Drain Current Pulsed (Note 1) 66 A
Single Pulsed Avalanche Energy (Note 2) 672 mJ
Avalanche Current 7.3 A
Repetitive Avalanche Energy 2.75 mJ
Peak Diode Recovery dv/dt (Note 3) 20
MOSFET dv/dt 100
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
= 25oC) 22
C
= 100oC) 13.8
C
o
C1.64W/
300
Thermal Characteristics
Symbol Parameter FCH22N60N Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.61
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40
A
V/ns
o
o
o
C/WR
o
C
C
C
©2010 Fairchild Semiconductor Corporation
FCH22N60N Rev. A
www.fairchildsemi.com1
FCH22N60N N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FCH22N60N FCH22N60N TO247 - - 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
I
= 1mA, VGS = 0V,TJ = 25oC600--
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±50V, V
On Characteristics
V
R
g
GS(th)
FS
DS(on)
Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 3 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 Ω
Forward Transconductance VDS = 20V, ID = 11A - 22 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 196.4 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1 - Ω
Input Capacitance
Output Capacitance - 75.9 - pF
Reverse Transfer Capacitance - 3 - pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 43.2 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 8.7 - nC
Gate to Drain “Miller” Charge - 14.5 - nC
D
= 1mA, VGS = 0V, TJ = 150oC650- -
I
D
I
= 1mA, Referenced to 25oC - 0.68 - V/oC
D
V
= 480V, V
DS
= 480V, TJ = 125oC - - 100
V
DS
= 100V, VGS = 0V
V
DS
f = 1MHz
= 0V - - 10
GS
= 0V - - ±100 nA
DS
- 1950 - pF
-45-nC
V
= 380V, ID = 11A,
DS
V
= 10V
GS
(Note 4)
V
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 16.7 - ns
Turn-Off Delay Time - 49 - ns
Turn-Off Fall Time - 4 - ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 22 A
Maximum Pulsed Drain to Source Diode Forward Current - - 66 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 6 - μC
= 380V, ID = 11A
V
DD
R
= 4.7Ω
G
(Note 4)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 11A - - 1.2 V
SD
= 11A
SD
- 16.9 - ns
- 350 - ns
FCH22N60N Rev. A
www.fairchildsemi.com2
Typical Performance Characteristics
110
0.1
1
10
100
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.3
2345678
1
10
100
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0 102030405060
0.1
0.2
0.3
0.4
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.5 1.0 1.5
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100
1
10
100
1000
10000
1E5
C
iss
C
oss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
600
0 1020304050
0
2
4
6
8
10
*Note: ID = 11A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCH22N60N N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCH22N60N Rev. A
www.fairchildsemi.com3
Loading...