Fairchild FCD9N60NTM service manual

FCD9N60NTM

N-Channel MOSFET

600V, 9A, 0.385mΩ

FCD9N60NTM N-Channel MOSFET

February 2010

TM

SupreMOS

Features

•R

• Ultra Low Gate Charge (Typ.Qg = 17.8nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

= 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A

DS(on)

G

S

D

D-PAK

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech­nologies. By utilizing this advance technology and precise process
control, SupreMOS provide world class Rsp, superior switching
performance and ruggedness.

This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

D

G

(TO-252)

S

MOSFET Maximum Ratings T

Symbol Parameter FCD9N60N Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 27 A

Single Pulsed Avalanche Energy (Note 2) 135 mJ

Aval anc he Curre nt 9. 0 A

Repetitive Avalanche Energy 9.3 mJ

MOSFET dv/dt Ruggedness 100

Peak Diode Recovery dv/dt (Note 3) 15

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 92.6 W

C

- Derate above 25

= 25oC) 9.0

C

= 100oC) 5.7

C

o

C0.74W/

300

Thermal Characteristics

Symbol Parameter FCD9N60N Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.35

Thermal Resistance, Junction to Ambient 62.5

V/ns

o

o

o

C/W

A

o

C

C

C

©20010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. A

www.fairchildsemi.com1

FCD9N60NTM N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FCD9N60N FCD9N60NTM D-PAK 380mm 16mm 2500

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 122 - pF

C

oss

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC-0.8-V/

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.330 0.385 Ω

Forward Transconductance VDS = 40V, ID = 4.5A - 5.3 - S

Input Capacitance

Output Capacitance - 40 53 pF

Reverse Transfer Capacitance - 3.5 5.5 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

- 735 1000 pF

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 23.7 - pF

μA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(tot)

gs

gd

Turn-On Delay Time

Turn-On Rise Time - 9.6 - ns

Turn-Off Delay Time - 28.7 - ns

Turn-Off Fall Time - 11.5 - ns

Total Gate Charge at 10V

Gate to Source Gate Charge - 4.2 - nC

Gate to Drain “Miller” Charge - 7.6 - nC

- 13.2 - ns

= 380V, ID = 4.5A

V

DD

R

= 4.7Ω

GEN

(No te 4)

-17.8-nC

V

= 380V, ID = 4.5A

DS

= 10V

V

GS

(No te 4)

ESR Equivalent Series Resistance(G-S) Drain Open - 2.65 - Ω

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - 9.0 - A

Maximum Pulsed Drain to Source Diode Forward Current - 27 - A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 5.04 - μC

= 0V, I

GS

= 0V, I

V

GS

dI

/dt = 100A/μs

F

= 9A - - 1.2 V

SD

SD

= 9A

- 322 - ns

FCD9N60NTM Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

60

V

=

15.0 V

GS

10.0 V

8.0 V

7.0 V

10

6.5 V

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

1. 250

μ

s Pulse Test

2. T

= 25oC

0.1

0.4 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.9

50

10

150oC

-55oC

1

,Drain Current[A]

D

I

0.1
456789

25oC

*Notes:

1. V

2. 250

= 20V

DS

μ

s Pulse Test

VGS,Gate-Source Voltage[V]

100

FCD9N60NTM N-Channel MOSFET

0.8

0.7

,

]

Ω

[

0.6

DS(ON)

R

0.5

0.4

Drain-Source On-Resistance

0.3
0 102030

VGS = 10V

VGS = 20V

*Note: TC = 25oC

ID, Drain Current [A]

10

1

, Reverse Drain Current [A]

S

I

0.5 1.0 1.5

150oC

25oC

*Notes:

1. VGS = 0V

μ

s Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

50000

10000

C

C

oss

C

= Cgs + Cgd (Cds = shorted

iss

C

= Cds + C

oss

C

rss

iss

= C

gd

gd

1000

C

100

Capacitances [pF]

10

1

0.1 1 10 100 600

rss

*Note:

= 0V

1. V

GS

2. f = 1MHz

VDS, Drain-Source Voltage [V]

)

10

VDS = 150V
V

8

V

= 300V

DS

= 480V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 5 10 15 20

*Note: ID = 4.5A

Qg, Total Gate Charge [nC]

FCD9N60NTM Rev. A

3

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