FCD7N60/FCU7N60 600V N-Channel MOSFET
FCD7N60 / FCU7N60
600V N-Channel MOSFET Features
•650V @TJ = 150°C
• Typ. Rds(on)=0.53Ω
• Ultra low gate charge (typ. Qg=23nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
• RoHS Compliant
D
G
S
D-PAK
FCD Series
GSD
December 2008
SuperFET
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching perfor
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
I-PAK
FCU Series
S
mance, and
TM
Absolute Maximum Ratings
Symbol Parameter FCD7N60/FCU7N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 7 A
Repetitive Avalanche Energy (Note 1) 8.3 mJ
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (T
- Derate above 25°C
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 20 V/ns
7
4.4
21
230 mJ
83
0.67
300 °C
Thermal Characteristics
Symbol Parameter FCD7N60/FCU7N60 Unit
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 1.5 °C/W
Thermal Resistance, Junction-to-Ambient 83 °C/W
A
A
A
W
W/°C
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCD7N60/FCU7N60 Rev. A1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCD7N60 FCD7N60TM D-PAK 380mm 16mm 2500
FCD7N60 FCD7N60TF D-PAK 380mm 16mm 2000
FCU7N60 FCU7N60 I-PAK - - 70
FCD7N60/FCU7N60 600V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
= 0V, ID = 250µA, TJ = 150°C -- 650 -- V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
= 250µA, Referenced to 25°C -- 0.6 -- V/°C
I
D
VGS = 0V, ID = 7A
= 480V, TC = 125°C
V
DS
-- 700 -- V
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 3.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 380 500 pF
V
= 10V, ID = 3.5A -- 0.53 0.6 Ω
GS
(Note 4)
-- 6 -- S
-- 710 920 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 34 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 22 29 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF
Turn-On Delay Time VDD = 300V, ID = 7A
= 25Ω
R
Turn-On Rise Time -- 55 120 ns
G
-- 35 80 ns
Turn-Off Delay Time -- 75 160 ns
Turn-Off Fall Time -- 32 75 ns
Total Gate Charge VDS = 480V, ID = 7A
V
= 10V
Gate-Source Charge -- 4.2 5.5 nC
GS
Gate-Drain Charge -- 11.5 -- nC
(Note 4, 5)
-- 23 30 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 7A
/dt =100A/µs (Note 4)
dI
Reverse Recovery Charge -- 4.5 -- µC
F
-- 360 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by
2. I
= 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
3. ISD ≤ 7A, di/dt ≤ 1200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
. Essentially Independent of Operating Temperature
5
FCD7N60/FCU7N60 Rev. A1
maximum junction temperature
, Starting TJ = 25°C
DSS
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V
10
6.0 V
Bottom : 5.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
* Notes :
1. 250
2. T
1
10
µs Pulse Test
= 25oC
C
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Cur
2.0
1.8
1.6
1.4
1.2
[Ω],
1.0
DS(ON)
R
0.8
0.6
0.4
Drain-Source On-Resistance
0.2
0.0
0 5 10 15 20
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
ID, Drain Current [A]
1
10
150oC
0
10
, Drain Current [A]
D
I
-1
10
246810
25oC
-55oC
VGS , Gate-Source Voltage [V]
and Temperatue
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
150oC
25oC
VSD , Source-Drain Voltage [V]
* Note
1. V
2. 250
rent
* Notes :
1. V
2. 250
= 40V
DS
µs Pulse Test
= 0V
GS
µs Pulse Test
FCD7N60/FCU7N60 600V N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
3000
2000
1000
Capacitance [pF]
0
-1
10
FCD7N60/FCU7N60 Rev. A1
C
C
C
C
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
* Notes :
= 0 V
1. V
GS
2. f = 1 MHz
1
10
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25
* Note : ID = 7A
QG, Total Gate Charge [oC]
3 www.fairchildsemi.com
Typical Performance Characteristics (Continued)
FCD7N60/FCU7N60 600V N-Channel MOSFET
Figure 7. Breakdown Voltage Variation Figure 8.
On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
1.0
, (Normalized)
BV
DSS
0.9
* Notes :
1. V
2. I
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
= 0V
GS
= 250µA
D
3.0
2.5
2.0
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
* Notes :
1. V
2. I
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
2
10
Operation in This Area
is Limited by R
1
10
0
10
DS(on)
100 µs
10.0
7.5
1 ms
10 ms
DC
5.0
GS
= 3.5 A
D
= 10 V
, Drain Current [A]
I
D
-1
10
-2
10
10
* Notes :
1. T
C
2. T
J
3. Single Puls e
0
= 25 oC
= 150 oC
1
10
VDS, Drain-Source Voltage [V]
, Drain Current [A]
D
I
2.5
2
10
3
10
0.0
25 50 75 100 125 150
Figure 11. Transient Thermal Response Curve
0
10
D=0.5
0.2
0.1
-1
10
0.05
0.02
0.01
(t), Thermal Response
θJC
Z
-2
10
-5
10
single pulse
-4
10
-3
10
10
t1, Square W ave Pulse Duration [sec]
-2
* Notes :
(t) = 1.5 oC/W Max.
1. Z
θJC
2. D u ty F ac to r , D =t
3. TJM - TC = PDM * Z
P
DM
t
1
t
-1
10
TC, Case Temperature [oC]
1/t2
(t)
θJC
2
0
10
1
10
FCD7N60/FCU7N60 Rev. A1
4 www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCD7N60/FCU7N60 600V N-Channel MOSFET
FCD7N60/FCU7N60 Rev. A1
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCD7N60/FCU7N60 600V N-Channel MOSFET
FCD7N60/FCU7N60 Rev. A1
6 www.fairchildsemi.com
Mechanical Dimensions
FCD7N60/FCU7N60 600V N-Channel MOSFET
D-PAK
FCD7N60/FCU7N60 Rev. A1
Dimensions in Millimeters
7 www.fairchildsemi.com
Package Dimensions (Continued)
FCD7N60/FCU7N60 600V N-Channel MOSFET
I-PAK
FCD7N60/FCU7N60 Rev. A1
Dimensions in Millimeters
8 www.fairchildsemi.com
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FCD7N60/FCU7N60 600V N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datashe et is for reference information only.
Rev. I37
FCD7N60/FCU7N60 Rev. A1
9 www.fairchildsemi.com
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