Fairchild FCD5N60, FCU5N60 service manual
FCD5N60 / FCU5N60 600V N-Channel MOSFET
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
•650V @TJ = 150°C
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested
• RoHS Compliant
D
December 2008
TM
SuperFET
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has be
conduction loss, provide superior switch
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
en tailored to minimize
ing performance, and
D
G
G
S
D-PAK
FCD Series
GSD
I-PAK
FCU Series
S
Absolute Maximum Ratings
Symbol Parameter FCD5N60 / FCU5N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 4.6 A
Repetitive Avalanche Energy (Note 1) 5.4 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 4.5 V/ns
4.6
2.9
13.8
159 mJ
54
0.43
300 °C
Thermal Characteristics
A
A
A
W
W/°C
Symbol Parameter FCD5N60/FCU5N60 Unit
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCD5N60 / FCU5N60 Rev. B1
Thermal Resistance, Junction-to-Case 2.3 °C/W
Thermal Resistance, Junction-to-Ambient 83 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCD5N60 FCD5N60TM D-PAK 380mm 16mm 2500
FCD5N60 FCD5N60TF D-PAK 380mm 16mm 2000
FCU5N60 FCU5N60 I-PAK -- -- 70
FCD5N60 / FCU5N60 600V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
V
= 0V, ID = 250μA, TJ = 150°C -- 650 -- V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
I
= 250μA, Referenced to 25°C -- 0.6 -- V/°C
D
VGS = 0V, ID = 4.6A
= 480V, TC = 125°C
V
DS
-- 700 -- V
--
--
--
--
1
10
μA
μA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 2.3A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 250 320 pF
= 10V, ID = 2.3A -- 0.81 0.95 Ω
V
GS
(Note 4)
-- 3.8 -- S
-- 470 600 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 22 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 -- pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF
Turn-On Delay Time VDD = 300V, ID = 4.6A
= 25Ω
R
Turn-On Rise Time -- 40 90 ns
G
-- 12 30 ns
Turn-Off Delay Time -- 47 95 ns
Turn-Off Fall Time -- 22 55 ns
Total Gate Charge VDS = 480V, ID = 4.6A
V
= 10V
Gate-Source Charge -- 2.8 -- nC
GS
Gate-Drain Charge -- 7 -- nC
(Note 4, 5)
-- 16 -- nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 4.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.8 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.6A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 4.6A
/dt =100A/μs (Note 4)
dI
Reverse Recovery Charge -- 2.7 -- μC
F
-- 295 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.6A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300
5. Essentially Independent of Operating Temperature Typical Characteristics
μs, Duty Cycle ≤ 2%
, Starting TJ = 25°C
DSS
FCD5N60 / FCU5N60 Rev. B1
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V
10
6.0 V
Bottom : 5.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
* Notes :
1. 250
2. T
1
10
μs Pulse Test
= 25oC
C
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
3.0
1
10
150oC
0
10
, Drain Current [A]
D
I
-1
10
246810
25oC
-55oC
VGS , Gate-Source Voltage [V]
and Temperatue
* Note
1. V
2. 250
= 40V
DS
μs Pulse Test
FCD5N60 / FCU5N60 600V N-Channel MOSFET
2.5
2.0
[Ω],
DS(ON)
R
1.5
VGS = 10V
VGS = 20V
1.0
Drain-Source On-Resistance
0.5
0.0 2.5 5.0 7.5 10.0 12.5 15.0
* Note : TJ = 25oC
ID, Drain Current [A]
1
10
150oC
0
10
, Drain Current [A]
D
I
-1
10
246810
25oC
-55oC
* Note
1. V
2. 250
= 40V
DS
μs Pulse Test
VGS , Gate- Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
1500
1000
C
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
* Notes :
1. V
= 0 V
GS
oss
2. f = 1 MHz
C
500
Capacitance [pF]
0
0
10
iss
C
rss
1
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
051015
QG, Total Ga te Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
* Note : ID = 4.6A
FCD5N60 / FCU5N60 Rev. B1
3 www.fairchildsemi.com
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