FCB36N60N
N-Channel MOSFET
600V, 36A, 90m
September 2010
SupreMOS
TM
FCB36N60N N-Channel MOSFET
Features
•R
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
TJ, T
T
L
*Drain current limited by maximum junction temperature
= 81m ( Typ.)@ VGS = 10V, ID = 18A
DS(on)
D
SG
o
= 25
C unless otherwise noted*
C
Symbol Parameter FCB36N60N Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
-Continuous (TC = 25oC) 36
-Continuous (TC = 100oC) 22.7
(TC = 25oC) 312 W
- Derate above 25oC 2.6 W/oC
STG
Drain Current
Drain Current - Pulsed (Note 1) 108 A
Single Pulsed Avalanche Energy (Note 2) 1800 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 3.12 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
300
Thermal Characteristics
Symbol Parameter FCB36N60N Units
R
JC
* Thermal Resistance, Junction to Ambient * 40
JA
R
JA
*When mounted on the minmium pad size recommended (PCB Mount)
Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Junction to Ambient 62.5
A
o
C
o
C
o
C/WR
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. A
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCB36N60N FCB36N60N D2-PAK 330mm 24mm 800
FCB36N60N N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
ID = 1mA, Referenced to 25oC - 0.7 - V/oC
VDS = 480V, V
VDS = 480V, V
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 18A - 81 90 m
Forward Transconductance VDS = 40V, ID = 18A - 41 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 361 - pF
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open - 1 -
Input Capacitance
Output Capacitance - 149 200 pF
Reverse Transfer Capacitance - 4 6 pF
VDS = 100V, VGS = 0V
f = 1MHz
- 3595 4785 pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 80 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 15.4 - nC
Gate to Drain “Miller” Charge - 26.4 - nC
VDS = 380V, ID = 18A,
VGS = 10V
(Note 4)
- 86 112 nC
A
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 94 198 ns
Turn-Off Fall Time - 4 18 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 12A, RG = 25, Starting TJ = 25C
2. I
AS
36A, di/dt 200A/s, VDD = 380V, Starting TJ = 25C
3. I
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 36 A
Maximum Pulsed Drain to Source Diode Forward Current - - 108 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 10 - C
VDD = 380V, ID = 18A
RG = 4.7
(Note 4)
= 0V, I
GS
VGS = 0V, I
= 18A - - 1.2 V
SD
= 18A
SD
dIF/dt = 100A/s
-2356ns
- 574 - ns
FCB36N60N Rev. A
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCB36N60N N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCB36N60N Rev. A
3
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FCB36N60N N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
P
DM
FCB36N60N Rev. A
4
P
DM
t
1
t
1
t
2
t
2
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCB36N60N N-Channel MOSFET
FCB36N60N Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCB36N60N N-Channel MOSFET
FCB36N60N Rev. A
6
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Mechanical Dimensions
FCB36N60N N-Channel MOSFET
D2PAK
FCB36N60N Rev. A
7
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FCB36N60N N-Channel MOSFET
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCB36N60N Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I48
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