Fairchild FCB36N60N service manual
FCB36N60N
N-Channel MOSFET
600V, 36A, 90m
September 2010
SupreMOS
TM
FCB36N60N N-Channel MOSFET
Features
•R
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
TJ, T
T
L
*Drain current limited by maximum junction temperature
= 81m ( Typ.)@ VGS = 10V, ID = 18A
DS(on)
D
SG
o
= 25
C unless otherwise noted*
C
Symbol Parameter FCB36N60N Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
-Continuous (TC = 25oC) 36
-Continuous (TC = 100oC) 22.7
(TC = 25oC) 312 W
- Derate above 25oC 2.6 W/oC
STG
Drain Current
Drain Current - Pulsed (Note 1) 108 A
Single Pulsed Avalanche Energy (Note 2) 1800 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 3.12 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
300
Thermal Characteristics
Symbol Parameter FCB36N60N Units
R
JC
* Thermal Resistance, Junction to Ambient * 40
JA
R
JA
*When mounted on the minmium pad size recommended (PCB Mount)
Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Junction to Ambient 62.5
A
o
C
o
C
o
C/WR
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. A
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCB36N60N FCB36N60N D2-PAK 330mm 24mm 800
FCB36N60N N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
ID = 1mA, Referenced to 25oC - 0.7 - V/oC
VDS = 480V, V
VDS = 480V, V
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 18A - 81 90 m
Forward Transconductance VDS = 40V, ID = 18A - 41 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 361 - pF
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open - 1 -
Input Capacitance
Output Capacitance - 149 200 pF
Reverse Transfer Capacitance - 4 6 pF
VDS = 100V, VGS = 0V
f = 1MHz
- 3595 4785 pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 80 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 15.4 - nC
Gate to Drain “Miller” Charge - 26.4 - nC
VDS = 380V, ID = 18A,
VGS = 10V
(Note 4)
- 86 112 nC
A
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 94 198 ns
Turn-Off Fall Time - 4 18 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 12A, RG = 25, Starting TJ = 25C
2. I
AS
36A, di/dt 200A/s, VDD = 380V, Starting TJ = 25C
3. I
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 36 A
Maximum Pulsed Drain to Source Diode Forward Current - - 108 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 10 - C
VDD = 380V, ID = 18A
RG = 4.7
(Note 4)
= 0V, I
GS
VGS = 0V, I
= 18A - - 1.2 V
SD
= 18A
SD
dIF/dt = 100A/s
-2356ns
- 574 - ns
FCB36N60N Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCB36N60N N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCB36N60N Rev. A
3
www.fairchildsemi.com
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