Fairchild FCB20N60F service manual
FCB20N60F 600V N-CHANNEL FRFET
FCB20N60F
600V N-CHANNEL FRFET
Features
• 650V @ TJ = 150°C
• Typ. Rds(on)=0.15:
• Fast Recovery Type ( trr = 160ns )
• Ultra low gate charge (typ. Qg=75nC)
• Low effective output capacitance (typ. Coss.eff=165pF)
• 100% avalanche tested
• RoHS Compliant
D
December 2008
SuperFET
Description
SuperFETTM is, s proprietary, new generation of high
voltage M OSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Fairchild'
D
G
TM
G
S
S
Absolute M axim um Ratings
Sym bol Param eter FCB20N60F Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (T
Drain Current - Pulsed
Gate-Source voltage r30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 20 A
Repetitive Avalanche Energy (Note 1) 20.8 mJ
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 qC
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (T
= 25qC)
C
- Derate above 25qC
= 25qC)
C
= 100qC)
C
(Note 1)
(Note 2)
20
12.5
60
690 mJ
208
1.67
300 qC
W/qC
Therm al Characteristics
Sym bol Param eter FCB20N60F Unit
R
TJC
R
* Thermal Resistance, Junction-to-Ambient* 40 qC/W
TJA
R
TJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case 0.6 qC/W
Thermal Resistance, Junction-to-Ambient 62.5 qC/W
A
A
A
W
©200 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
8
FCB20N60F Rev. A
4
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape W idth Quantity
FCB20N60F FCB20N60FTM D2-Pak 330mm 24m 800
FCB20N60F 600V N-CHANNEL FRFET
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
/ 'T
BV
DSS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, I
VGS = 0V, I
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
I
= 250PA, Referenced to 25qC -- 0.6 -- V/qC
D
VGS = 0V, I
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
VDS = 480V, T
= 250PA, TJ = 25qC 600 -- -- V
D
= 250PA, TJ = 150qC -- 650 -- V
D
= 20A
D
= 125qC
C
-- 700 -- V
--
--
--
--
10
100
PA
PA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, I
Static Drain-Source
On-Resistance
VGS = 10V, I
Forward Transconductance VDS = 40V, ID = 10A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1280 1665 pF
f = 1.0MHz
= 250PA 3.0 -- 5.0 V
D
= 10A -- 0.15 0.19 :
D
(Note 4)
-- 17 -- S
-- 2370 3080 pF
Reverse Transfer Capacitance -- 95 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Turn-On Delay Time VDD = 300V, ID = 20A
R
= 25:
Turn-On Rise Time -- 140 290 ns
G
-- 62 135 ns
Turn-Off Delay Time -- 230 470 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge VDS = 480V, ID = 20A
Gate-Source Charge -- 13.5 18 nC
VGS = 10V
Gate-Drain Charge -- 36 -- nC
(Note 4, 5)
-- 75 98 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
dI
/dt =100A/Ps (Note 4)
Reverse Recovery Charge -- 1.1 -- PC
F
-- 160 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, R
3. I
d 20A, di/dt d1200A/Ps, VDDd BV
SD
4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCB20N60F Rev. A
= 25:, Starting TJ = 25qC
G
4
, Starting T
DSS
= 25qC
J
2 w
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2
10
V
S
1
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
G
2
10
1
10
150oC
FCB20N60F 600V N-CHANNEL FRFET
25oC
0
, Drain Current [A]
10
D
I
1
-
10
0
10
* Notes :
1. 250Ps Pulse Test
2. TC = 25oC
1
10
VDS, Drain-Source Voltage [V]
, Drain Current [A]
D
0
I
10
2 4 6 8 1
VGS , Gate-Source Voltage [V]
-55oC
* Note:
1. VDS = 40V
2. 250Ps Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4
0.3
= 10V
V
S
G
[:],
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
.0
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
* Note : TJ
ID, Drain Current [A]
= 20V
V
S
G
= 25oC
10
1
10
0
0
1
, Reverse Drain Current [A]
DR
I
150oC
25oC
* Notes :
1. VGS = 0V
2. 250Ps Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
0
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
Capacitance [pF]
2000
1000
0
-
1
10
FCB20N60F Rev. A
C
= Cgs + Cgd (Cds = shorted)
i
ss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
o
ss
* Notes :
1. VGS = 0 V
10
2. f = 1 MHz
1
C
i
ss
C
r
ss
0
10
VDS, Drain-Source Voltage [V]
4
12
V
= 100V
D
1
0
8
V
= 250V
D
S
VDS = 400V
S
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 10 20 30 40 50 60 70 80
* Note : ID
QG, Total Gate Charge [nC]
3 w
= 20A
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